EP 2415084 A2 20120208 - ELECTRONIC STRUCTURE INCLUDING AN EPITAXIAL LAYER ON SINTERED SILICON
Title (en)
ELECTRONIC STRUCTURE INCLUDING AN EPITAXIAL LAYER ON SINTERED SILICON
Title (de)
ELEKTRONISCHE STRUKTUR MIT EINER EPITAXIALSCHICHT AUF GESINTERTEM SILICIUM
Title (fr)
STRUCTURE ELECTRONIQUE A COUCHE EPITAXIEE SUR SILICIUM FRITTE
Publication
Application
Priority
- FR 2010050628 W 20100401
- FR 0952110 A 20090402
Abstract (en)
[origin: WO2010112782A2] The invention relates to a method and an electronic structure (35) including a substrate (26, 28), produced by sintering silicon powders, and at least one epitaxial layer (32). The invention also relates to photovoltaic cells and can be used in other fields, such as the fields of electronics, microelectronics or optoelectronics.
IPC 8 full level
H01L 31/18 (2006.01); C04B 35/645 (2006.01); C04B 35/65 (2006.01); H01L 21/20 (2006.01); H01L 21/22 (2006.01); H01L 31/042 (2006.01)
CPC (source: EP)
H01L 31/0745 (2013.01); H01L 31/1804 (2013.01); H01L 31/1872 (2013.01); Y02E 10/547 (2013.01); Y02P 70/50 (2015.11)
Citation (search report)
See references of WO 2010112782A2
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR
DOCDB simple family (publication)
WO 2010112782 A2 20101007; WO 2010112782 A3 20110519; CN 102439736 A 20120502; EP 2415084 A2 20120208; FR 2944142 A1 20101008; FR 2944142 B1 20110603
DOCDB simple family (application)
FR 2010050628 W 20100401; CN 201080015755 A 20100401; EP 10723184 A 20100401; FR 0952110 A 20090402