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32 pages, 6198 KiB  
Review
A Review on Preparation of Palladium Oxide Films
by Petre Badica and Adam Lőrinczi
Coatings 2024, 14(10), 1260; https://doi.org/10.3390/coatings14101260 - 1 Oct 2024
Viewed by 1256
Abstract
Fabrication aspects of PdO thin films and coatings are reviewed here. The work provides and organizes the up-to-date information on the methods to obtain the films. In recent years, the interest in Pd oxide for different applications has increased. Since Pd can be [...] Read more.
Fabrication aspects of PdO thin films and coatings are reviewed here. The work provides and organizes the up-to-date information on the methods to obtain the films. In recent years, the interest in Pd oxide for different applications has increased. Since Pd can be converted into PdO, it is instructive to pay attention to the preparation of the pure and the alloyed Pd films, heterostructures, and nanoparticles synthesized on different substrates. The development of PdO films is presented from the early reports on coatings’ formation by oxidation of Pd foils and wires to present technologies. Modern synthesis/growth routes are gathered into chemical and physical categories. Chemical methods include hydrothermal, electrochemical, electroless deposition, and coating methods, such as impregnation, precipitation, screen printing, ink jet printing, spin or dip coating, chemical vapor deposition (CVD), and atomic layer deposition (ALD), while the physical ones include sputtering and cathodic arc deposition, laser ablation, ion or electron beam-induced deposition, evaporation, and supersonic cluster beam deposition. Analysis of publications indicates that many as-deposited Pd or Pd-oxide films are granular, with a high variety of morphologies and properties targeting very different applications, and they are grown on different substrates. We note that a comparative assessment of the challenges and quality among different films for a specific application is generally missing and, in some cases, it is difficult to make a distinction between a film and a randomly oriented, powder-like (granular), thin compact material. Textured or epitaxial films of Pd or PdO are rare and, if orientation is observed, in most cases, it is obtained accidentally. Some practical details and challenges of Pd oxidation toward PdO and some specific issues concerning application of films are also presented. Full article
(This article belongs to the Special Issue Advances of Nanoparticles and Thin Films)
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<p>Arbitrary classification of the technological routes to obtain Pd and PdO coatings.</p>
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<p>Adapted from [<a href="#B98-coatings-14-01260" class="html-bibr">98</a>]. (<b>a</b>) Electrochemical gas sensor arrangement (30 mL glass cell): RE—reference electrode; MFC—mass flow controller and the inlet for the gas covered with fluorinated ethylene propylene (FEP) H<sub>2</sub> gas-permeable membrane; WE—working electrode, PdO thin film of 1 μm thickness on ITO substrate; CE—counter electrode, Pt rod. (<b>b</b>) Room-temperature response by using the sensing arrangement from (<b>a</b>) when passing a H<sub>2</sub> gas (10%–70% in Ar) into the cell for 200 s and for a constant potential on electrodes of 1 V.</p>
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<p>Reproduced with permission from [<a href="#B106-coatings-14-01260" class="html-bibr">106</a>]. PdO sensor resistance at different ozone concentrations as a function of time at an operating temperature of 220 °C. SA denotes synthetic air. Note that ozone (O<sub>3</sub>) is harmful to human health, similar to other oxidizing gases, such as NO<sub>x</sub>, SO<sub>2</sub>, and Cl<sub>2</sub>. It is a by-product of many modern technologies, and its interaction under sunlight with volatile hydrocarbons produces many toxic organic compounds.</p>
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<p>Reproduced with permission from [<a href="#B121-coatings-14-01260" class="html-bibr">121</a>]. (<b>i</b>) TEM images taken on (<b>a</b>,<b>b</b>) ZnO and (<b>c</b>,<b>d</b>) ZnO-PdO. (<b>ii</b>) Response to toluene and ethanol of the structures from (<b>i</b>) at different operating temperatures.</p>
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<p>Reproduced with permission from [<a href="#B124-coatings-14-01260" class="html-bibr">124</a>]. (<b>a</b>–<b>c</b>) SEM images of Pd/PdO films obtained by thermolysis in air, low vacuum, and N<sub>2</sub>. (<b>d</b>–<b>f</b>) SEM images of films from (<b>a</b>–<b>c</b>) were taken at higher magnification. (<b>g</b>–<b>i</b>) SEM images on cross-sections of the films from (<b>a</b>–<b>c</b>).</p>
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<p>Reproduced with permission from [<a href="#B167-coatings-14-01260" class="html-bibr">167</a>]. (<b>a</b>) SEM image of the porous Pd thin film on AAO substrate prepared by <span class="html-italic">dc</span> magnetron sputtering and post-annealed at 200 °C, and (<b>b</b>) room-temperature response at various hydrogen concentrations in nitrogen carrier gas. On the Pd film, Au electrodes (10 mm × 3 mm) were deposited by thermal evaporation.</p>
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<p>Reproduced with permission from [<a href="#B176-coatings-14-01260" class="html-bibr">176</a>]. SEM images of reactively sputtered films in different oxygen atmospheres: (<b>a</b>) 15%, (<b>b</b>) 20%, (<b>c</b>) 25%, and (<b>d</b>) 30%.</p>
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<p>Reproduced with permission from [<a href="#B185-coatings-14-01260" class="html-bibr">185</a>]. (<b>a</b>) Optical sensor arrangement based on optical absorbance of the sample when irradiated from a source of a halogen lamp in the spectral range of 400–800 nm. (<b>b</b>) Response time (calculated as the average time to change from 5% to 95% of the absorbance) at room temperature of the samples with different thicknesses to 5 vol.% H<sub>2</sub> gas in nitrogen.</p>
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<p>Reproduced with permission from [<a href="#B225-coatings-14-01260" class="html-bibr">225</a>]. Fabrication of a typical Pd/MOS (MOS—metal oxide semiconductor) capacitor hydrogen sensor. The hydrogen diffuses from the metal Pd gate (active element) and creates a dipole layer at the (Pd/SiO<sub>2</sub>) interface that changes the work function of the active element. The response, R (%) = (C<sub>H</sub> − C<sub>N</sub>)/C<sub>N</sub> × 100, where C<sub>H</sub> and C<sub>N</sub> are the capacitance of the sensor in hydrogen gas and pure nitrogen, respectively. The carrier gas is nitrogen, argon, and air.</p>
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<p>Reproduced with permission from [<a href="#B245-coatings-14-01260" class="html-bibr">245</a>]. SEM images showing the morphology of Ir<sub>(1−x)</sub>Pd<sub>x</sub>O<sub>y</sub> films deposited on 316 SS substrates for: (<b>a</b>) x = 0.14, (<b>b</b>) x = 0.50, (<b>c</b>) x = 0.90, and (<b>d</b>) x = 0.95. Map of morphology summarizing results from (<b>a</b>–<b>d</b>) depending on the composition of the Ir<sub>(1−x)</sub>Pd<sub>x</sub>O<sub>y</sub> films (<b>e</b>).</p>
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23 pages, 9665 KiB  
Article
Effects of Powder Reuse and Particle Size Distribution on Structural Integrity of Ti-6Al-4V Processed via Laser Beam Directed Energy Deposition
by MohammadBagher Mahtabi, Aref Yadollahi, Courtney Morgan-Barnes, Matthew W. Priddy and Hongjoo Rhee
J. Manuf. Mater. Process. 2024, 8(5), 209; https://doi.org/10.3390/jmmp8050209 - 25 Sep 2024
Viewed by 1662
Abstract
In metal additive manufacturing, reusing collected powder from previous builds is a standard practice driven by the substantial cost of metal powder. This approach not only reduces material expenses but also contributes to sustainability by minimizing waste. Despite its benefits, powder reuse introduces [...] Read more.
In metal additive manufacturing, reusing collected powder from previous builds is a standard practice driven by the substantial cost of metal powder. This approach not only reduces material expenses but also contributes to sustainability by minimizing waste. Despite its benefits, powder reuse introduces challenges related to maintaining the structural integrity of the components, making it a critical area of ongoing research and innovation. The reuse process can significantly alter powder characteristics, including flowability, size distribution, and chemical composition, subsequently affecting the microstructures and mechanical properties of the final components. Achieving repeatable and consistent printing outcomes requires powder particles to maintain specific and consistent physical and chemical properties. Variations in powder characteristics can lead to inconsistencies in the microstructural features of printed components and the formation of process-induced defects, compromising the quality and reliability of the final products. Thus, optimizing the powder recovery and reuse methodology is essential to ensure that cost reduction and sustainability benefits do not compromise product quality and reliability. This study investigated the impact of powder reuse and particle size distribution on the microstructural and mechanical properties of Ti-6Al-4V specimens fabricated using a laser beam directed energy deposition technique. Detailed evaluations were conducted on reused powders with two different size distributions, which were compared with their virgin counterparts. Microstructural features and process-induced defects were examined using scanning electron microscopy and X-ray computed tomography. The findings reveal significant alterations in the elemental composition of reused powder, with distinct trends observed for small and large particles. Additionally, powder reuse substantially influenced the formation of process-induced defects and, consequently, the fatigue performance of the components. Full article
(This article belongs to the Special Issue Fatigue and Fracture Mechanics in Additive Manufacturing)
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<p>Schematic of the powder reuse process employed in this study for powders with small and large particle size distributions (PSDs).</p>
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<p>SEM images of plasma-atomized Ti-6Al-4V powders in different conditions: (<b>a</b>) virgin–small, (<b>b</b>) virgin–large, (<b>c</b>) reused–small, and (<b>d</b>) reused–large.</p>
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<p>Particle size distributions (PSDs) of small and large powder samples before and after reuse, measured using laser diffraction.</p>
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<p>Powder flow rates of samples with small and large particle size distributions (PSDs) before and after reuse, measured using a standard Hall Flowmeter.</p>
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<p>Elemental compositions of powder samples with small and large particle size distributions (PSDs) before and after reuse.</p>
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<p>XRD patterns of powder samples with small and large particle size distributions (PSDs) before and after reuse.</p>
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<p>SEM images of the microstructure for specimens fabricated using (<b>a</b>,<b>b</b>) small powder particles and (<b>b</b>,<b>d</b>) large powder particles in the virgin (<b>a</b>,<b>c</b>) and reused (<b>b</b>,<b>d</b>) conditions.</p>
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<p>XCT images of DED-LB Ti-6Al-4V fatigue specimens fabricated using powders with small and large particle size distributions (PSDs) before and after reuse.</p>
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<p>Volumes of detected defects for DED-LB Ti-6Al-4V specimens fabricated using (<b>a</b>) small and (<b>b</b>) large particle size distributions (PSDs) before and after reuse.</p>
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<p>Vickers microhardness values for DED-LB Ti-6Al-4V specimens fabricated using powders with small and large particle size distributions (PSDs) before and after reuse.</p>
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<p>Fully-reversed (R = −1) fatigue stress–life data for DED-LB Ti-6Al-4V specimens fabricated using powders with small and large particle size distributions (PSDs) before and after reuse.</p>
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<p>Cumulative volume fraction of powder particles with small and large particle size distributions (PSDs) before and after reuse.</p>
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<p>(<b>a</b>) Probability density function and (<b>b</b>) cumulative distribution function using extreme value distribution (Gumbel) for detecting defects in specimens fabricated using powders with small and large particle size distributions (PSDs) before and after reuse.</p>
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<p>Fatigue fracture surfaces of the Ti-6Al-4V specimens fabricated using small powder particles in (<b>a</b>) virgin and (<b>b</b>) reused states.</p>
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20 pages, 5557 KiB  
Article
Strategy for Ensuring the Metrological Traceability of Nanoparticle Size Measurements by SEM
by Nicolas Feltin, Alexandra Delvallée and Loïc Crouzier
Nanomaterials 2024, 14(11), 931; https://doi.org/10.3390/nano14110931 - 25 May 2024
Cited by 1 | Viewed by 1000
Abstract
The concept of measurement traceability is crucial for ensuring the data reliability and the comparability of measurement results provided by different instruments and operators. In the field of nanoparticle metrology, determining the size of nanoparticles using electron microscopy-based techniques remains a real challenge. [...] Read more.
The concept of measurement traceability is crucial for ensuring the data reliability and the comparability of measurement results provided by different instruments and operators. In the field of nanoparticle metrology, determining the size of nanoparticles using electron microscopy-based techniques remains a real challenge. In laboratory settings, the establishment of traceability regarding the instrument calibration procedures, the assessment of uncertainties associated with instruments/operators/samples/environments, as well as the complexities related to electron–sample interactions, are often neglected. In this article, we describe the calibration procedure set up at the LNE (Laboratoire National de métrologie et d’Essais) and propose an evaluation method for determining the uncertainties in measuring nanoparticle size by SEM (Scanning Electron Microscopy). This study investigates the impact of the energy of the primary electrons (PEs) generated by the electron beam and accelerating voltage on the reliability of size measurements. The convolution between the signals coming from a nanoparticle and the substrate on which the particle is deposited induces edge effects that can have a negative impact on the measurement results. Finally, a diagram describing the various stages involved in establishing traceability for SEM measurements of nanoparticle size is proposed to facilitate the work of future operators. Full article
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<p>SEM images of the four studied samples in this study: FD-101 b 40/80 nm bimodal nanosilica (×20,000), FD-304 25 nm monomodal nanosilica (×40,000), bimodal PSL(×20,000), only the 90 nm population is considered here, and BBI 50 nm nanogold (×20,000).</p>
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<p>(<b>a</b>) LNE’s metrological AFM, the national reference instrument and keystone in the traceability chain for nanometre-scale measurements; (<b>b</b>) 2D standard grating (S1932B80) with a pitch of 10 µm, etched on a silicon chip; and (<b>c</b>) 3D pattern grating P900H60 developed in collaboration with CNRS/C2N. The grating pitch (along the X and Y axes) is equal to (899.9 ± 2.0) nm with a step height equal to (68.2 ± 1.0) nm.</p>
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<p>Example of a graph demonstrating the linearity of grating pitch measurements over the entire X-axis magnification range. The blue dotted lines indicate the tolerance zone (±5%). Every red dots, corresponding to measurement points, are within this tolerance zone for the three ranges.</p>
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<p>Pixel size deviation observed on the left part of a P900H60 sample image acquired in a Scanning Electron Microscope due to leading edge distortion. The pitch is measured at different positions along the X-axis.</p>
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<p>Profile extracted from SEM image of a single gold NP and performed along its diameter. TSL at Full Width at Half-Maximum (FWHM) are indicated in the Figure.</p>
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<p>EHT dependence of the NP modal diameters measured on various nanomaterials: 80 nm FD-101b, 25 nm FD-304 and 90 nm PSL nanoparticles and 50 nm nanogold from BBI.</p>
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<p>Histograms showing the size distribution of the four studied samples (FD-101b, FD-304, PSL and BBI nanogold) compiled from measurements performed at different acceleration voltages (EHT) ranging from 1 kV to 10 kV. The value of the modal diameter is given for each histogram to highlight the impact of the EHT parameter on the measured size.</p>
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<p>SEM images of 26 nm FD-304 (×40,000) (<b>a</b>) and 80 nm FD-101b (×20,000) and (<b>b</b>) silica nanoparticles at different EHT ranging from 1 kV to 12 kV. Profiles of each nanoparticle are measured along the NP diameter and are displayed to the right of the SEM images.</p>
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<p>SEM images of 50 nm gold nanoparticles (×20,000) (<b>a</b>) and 90 nm PSL nanoparticles (×20,000) (<b>b</b>) at different EHT ranging from 1 kV to 15 kV. Profiles of each nanoparticle measured along the longest part of the NP are seen to the right of the SEM images.</p>
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<p>(<b>a</b>) SEM images of a single 75 nm FD-101b particle (×50,000) deposited on Si-wafer and acquired at different EHT; (<b>b</b>) line-scan profiles associated with these images at various EHT; and (<b>c</b>) intensity of the silicon background and signal-to-noise ratio of the profiles as a function of EHT.</p>
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<p>(<b>a</b>) Zoomed-in view on the edges of the normalized profiles reported in <a href="#nanomaterials-14-00931-f010" class="html-fig">Figure 10</a> and acquired on a 75 nm FD-101b NP (×50,000) deposited on silicon substrate; (<b>b</b>) profiles of a single 82 nm FD-101b particle deposited on carbon substrate (copper grid) and imaged at various accelerating voltages; (left insert) SEM images of an NP at various EHT; and (right insert) background level and signal-to-noise ratio as a function of EHT.</p>
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<p>Diagram summarizing the various steps required to provide NP size measurements traceable to SI units with calibration, instrument qualification and TSL determination.</p>
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14 pages, 3436 KiB  
Article
Additive Manufacturing of Electrically Conductive Multi-Layered Nanocopper in an Air Environment
by David Pervan, Anil Bastola, Robyn Worsley, Ricky Wildman, Richard Hague, Edward Lester and Christopher Tuck
Nanomaterials 2024, 14(9), 753; https://doi.org/10.3390/nano14090753 - 25 Apr 2024
Viewed by 1269
Abstract
The additive manufacturing (AM) of functional copper (Cu) parts is a major goal for many industries, from aerospace to automotive to electronics, because Cu has a high thermal and electrical conductivity as well as being ~10× cheaper than silver. Previous studies on AM [...] Read more.
The additive manufacturing (AM) of functional copper (Cu) parts is a major goal for many industries, from aerospace to automotive to electronics, because Cu has a high thermal and electrical conductivity as well as being ~10× cheaper than silver. Previous studies on AM of Cu have concentrated mainly on high-energy manufacturing processes such as Laser Powder Bed Fusion, Electron Beam Melting, and Binder Jetting. These processes all require high-temperature heat treatment in an oxygen-free environment. This paper shows an AM route to multi-layered microparts from novel nanoparticle (NP) Cu feedstocks, performed in an air environment, employing a low-power (<10 W) laser sintering process. Cu NP ink was deposited using two mechanisms, inkjet printing, and bar coating, followed by low-power laser exposure to induce particle consolidation. Initial parts were manufactured to a height of approximately 100 µm, which was achieved by multi-layer printing of 15 (bar-coated) to 300 (inkjetted) layers. There was no evidence of oxidised copper in the sintered material, but they were found to be low-density, porous structures. Nonetheless, electrical resistivity of ~28 × 10−8 Ω m was achieved. Overall, the aim of this study is to offer foundational knowledge for upscaling the process to additively manufacture Cu 3D parts of significant size via sequential nanometal ink deposition and low-power laser processing. Full article
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<p>An overview of the investigation carried out in this study. Cu micro parts were developed through inkjet printing and bar coating via the direct deposition of Cu NP inks followed by low-power photonic sintering. Afterwards, various properties of the developed Cu microparts were investigated.</p>
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<p>DSC results for Cu NP, weight corrected heat flow plotted against temperature.</p>
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<p>SEM images of un-sintered (<b>a</b>) and laser processed (<b>b</b>) Cu NP. The scale bar is 1 µm. (<b>c</b>) XRD patterns of sintered and un-sintered Cu. (<b>d</b>) Mean Cu NP crystallite size before and after laser sintering.</p>
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<p>Compilation of SEM images of the cross-section of (<b>a</b>,<b>c</b>,<b>e</b>) inkjet-printed and (<b>b</b>,<b>d</b>,<b>f</b>) bar-coated Cu samples.</p>
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<p>Properties of printed and sintered Cu samples. (<b>a</b>) Comparison of porosity for bar-coated and inkjet-printed samples obtained through cross-sectional SEM image analysis (<a href="#nanomaterials-14-00753-f004" class="html-fig">Figure 4</a>). (<b>b</b>) Arithmetical mean height (surface roughness) of the top surface of 100 µm thick bar-coated and inkjet-printed samples. (<b>c</b>) Indentation hardness. (<b>d</b>) Creep distance over 5 s as a fraction of maximum plastic deformation. The results are presented as a fraction of the bulk Cu measurement. The standard deviation for each test is plotted as an error bar.</p>
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<p>Results of electrical measurements. (<b>a</b>) Sheet resistance against build height and (<b>b</b>) resistivity (as a multiple of bulk Cu resistivity) against build height for both bar coating and inkjet printing. Note, the y-axis is on a logarithmic scale for better visualisation. Error bars indicate standard deviations.</p>
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<p>Process window contour maps of different sintering phenomena at varying laser irradiance and laser speeds for four different Cu film thicknesses on a glass substrate. The images and labels indicate dark blue: no effect, light blue: evenly sintered, green: strongly sintered, yellow: continuously ablated and melted, red: ablated.</p>
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<p>Sintered line width against laser fluence for a single layer of Cu NP.</p>
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11 pages, 5306 KiB  
Article
Epitaxial Growth and Characterization of Nanoscale Magnetic Topological Insulators: Cr-Doped (Bi0.4Sb0.6)2Te3
by Pangihutan Gultom, Chia-Chieh Hsu, Min Kai Lee, Shu Hsuan Su and Jung-Chung-Andrew Huang
Nanomaterials 2024, 14(2), 157; https://doi.org/10.3390/nano14020157 - 11 Jan 2024
Viewed by 1422
Abstract
The exploration initiated by the discovery of the topological insulator (BixSb1−x)2Te3 has extended to unlock the potential of quantum anomalous Hall effects (QAHEs), marking a revolutionary era for topological quantum devices, low-power electronics, and spintronic [...] Read more.
The exploration initiated by the discovery of the topological insulator (BixSb1−x)2Te3 has extended to unlock the potential of quantum anomalous Hall effects (QAHEs), marking a revolutionary era for topological quantum devices, low-power electronics, and spintronic applications. In this study, we present the epitaxial growth of Cr-doped (Bi0.4Sb0.6)2Te3 (Cr:BST) thin films via molecular beam epitaxy, incorporating various Cr doping concentrations with varying Cr/Sb ratios (0.025, 0.05, 0.075, and 0.1). High-quality crystalline of the Cr:BST thin films deposited on a c-plane sapphire substrate has been rigorously confirmed through reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), and high-resolution transmission electron microscopy (HRTEM) analyses. The existence of a Cr dopant has been identified with a reduction in the lattice parameter of BST from 30.53 ± 0.05 to 30.06 ± 0.04 Å confirmed by X-ray diffraction, and the valence state of Cr verified by X-ray photoemission (XPS) at binding energies of ~573.1 and ~583.5 eV. Additionally, the influence of Cr doping on lattice vibration was qualitatively examined by Raman spectroscopy, revealing a blue shift in peaks with increased Cr concentration. Surface characteristics, crucial for the functionality of topological insulators, were explored via Atomic Force Microscopy (AFM), illustrating a sevenfold reduction in surface roughness as the Cr concentration increased from 0 to 0.1. The ferromagnetic properties of Cr:BST were examined by a superconducting quantum interference device (SQUID) with a magnetic field applied in out-of-plane and in-plane directions. The Cr:BST samples exhibited a Curie temperature (Tc) above 50 K, accompanied by increased magnetization and coercivity with increasing Cr doping levels. The introduction of the Cr dopant induces a transition from n-type ((Bi0.4Sb0.6)2Te3) to p-type (Cr:(Bi0.4Sb0.6)2Te3) carriers, demonstrating a remarkable suppression of carrier density up to one order of magnitude, concurrently enhancing carrier mobility up to a factor of 5. This pivotal outcome is poised to significantly influence the development of QAHE studies and spintronic applications. Full article
(This article belongs to the Section Synthesis, Interfaces and Nanostructures)
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<p>XRD diagrams for (<b>a</b>) a fixed Cr/Sb ratio of 0.1 under varied growth temperatures (indicated on the right-hand axis) and (<b>b</b>) a fixed growth temperature at 300 °C with varied Cr/Sb ratios (indicated on the right-hand axis). The signals are marked as asterisks for the c-plane Al<sub>2</sub>O<sub>3</sub> substrate indicated in the figure. (<b>c</b>) <span class="html-italic">c</span>-axis lattice parameter extracted from (0015) peak as a function of the Cr/Sb ratio. (<b>d</b>) TEM cross-sectional view of the film with a Cr/Sb ratio of 0.1 and a growth temperature of 300 °C. (<b>e</b>) Raman spectra of films with varied Cr/Sb ratios, with dashed vertical lines highlighting the three Raman active modes, <math display="inline"><semantics> <mrow> <msubsup> <mi>E</mi> <mi>g</mi> <mn>2</mn> </msubsup> </mrow> </semantics></math>, A<sub>1<span class="html-italic">u</span></sub>, and <math display="inline"><semantics> <mrow> <msubsup> <mi>A</mi> <mrow> <mn>1</mn> <mi>g</mi> </mrow> <mn>2</mn> </msubsup> </mrow> </semantics></math>. (<b>f</b>) XPS spectra of Cr 2p and Te 3d orbitals of the Cr/Sb ratio of the 0.1 sample. The black dots are the XPS spectra, and the blue and green curves are the Lorentz fitting curves corresponding to the Cr 2p and Te 3d orbitals, while the red curves are the total fitting curves. Note: * sign: c-plane Al<sub>2</sub>O<sub>3</sub> substrate signals.</p>
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<p>(<b>a</b>–<b>e</b>) Dependence of film morphology on Cr:BST samples with varied Cr/Sb ratios from an AFM (all images have a scan size of 2 μm × 2 μm). Inset corresponds to RHEED patterns. (<b>f</b>) Roughness for varied Cr/Sb ratios.</p>
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<p>(<b>a</b>–<b>c</b>) Hysteresis loops of the Cr:BST samples with various Cr/Sb ratios in a magnetic field along an out-of-plane direction at different temperatures of 5, 20, and 50 K, respectively. (<b>d</b>) Hysteresis loops of a Cr/Sb ratio of a 0.1 sample in a magnetic field along the in-plane direction at different temperatures.</p>
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<p>(<b>a</b>) The sheet resistance (R<sub>□</sub>) (left ordinate axis) and mobility (left ordinate axis) of Cr:BST samples with varied Cr/Sb ratios. (<b>b</b>) The absolute value of the sheet electron concentration <span class="html-italic">n</span><sub>2<span class="html-italic">D</span></sub> of Cr:BST with varied Cr/Sb ratios. (<b>c</b>) Magnetic field-dependent longitudinal resistance curves at 5 K of the Cr:BST sample with a Cr/Sb ratio of 0.025. (<b>d</b>) A rectangular-shaped hysteresis loop in magnetic field-dependent Hall resistance curves at 5 K of the Cr:BST sample with a Cr/Sb ratio = 0.025.</p>
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10 pages, 3656 KiB  
Article
Controllable Carrier Doping in Two-Dimensional Materials Using Electron-Beam Irradiation and Scalable Oxide Dielectrics
by Lu Wang, Zejing Guo, Qing Lan, Wenqing Song, Zhipeng Zhong, Kunlin Yang, Tuoyu Zhao, Hai Huang, Cheng Zhang and Wu Shi
Micromachines 2023, 14(11), 2125; https://doi.org/10.3390/mi14112125 - 19 Nov 2023
Cited by 1 | Viewed by 2347
Abstract
Two-dimensional (2D) materials, characterized by their atomically thin nature and exceptional properties, hold significant promise for future nano-electronic applications. The precise control of carrier density in these 2D materials is essential for enhancing performance and enabling complex device functionalities. In this study, we [...] Read more.
Two-dimensional (2D) materials, characterized by their atomically thin nature and exceptional properties, hold significant promise for future nano-electronic applications. The precise control of carrier density in these 2D materials is essential for enhancing performance and enabling complex device functionalities. In this study, we present an electron-beam (e-beam) doping approach to achieve controllable carrier doping effects in graphene and MoS2 field-effect transistors (FETs) by leveraging charge-trapping oxide dielectrics. By adding an atomic layer deposition (ALD)-grown Al2O3 dielectric layer on top of the SiO2/Si substrate, we demonstrate that controllable and reversible carrier doping effects can be effectively induced in graphene and MoS2 FETs through e-beam doping. This new device configuration establishes an oxide interface that enhances charge-trapping capabilities, enabling the effective induction of electron and hole doping beyond the SiO2 breakdown limit using high-energy e-beam irradiation. Importantly, these high doping effects exhibit non-volatility and robust stability in both vacuum and air environments for graphene FET devices. This methodology enhances carrier modulation capabilities in 2D materials and holds great potential for advancing the development of scalable 2D nano-devices. Full article
(This article belongs to the Special Issue 2D Materials: Devices and Functionalities)
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<p>Schematic of electron-beam (e-beam) doping in graphene FET devices on SiO<sub>2</sub>/Si substrates (<b>a</b>) without and (<b>b</b>) with an ALD-grown Al<sub>2</sub>O<sub>3</sub> layer. Charge doping is induced in the device during e-beam (1–30 keV) exposure in a standard SEM for a few seconds while holding the back-gate voltage <span class="html-italic">V</span><sub>G</sub> = <span class="html-italic">V</span><sub>SET</sub> ≠ 0 V. (<b>c</b>) Experimental setup for in situ e-beam doping and electrical measurements. The device is mounted in a SEM chamber using a custom holder attached to an electrical feedthrough for e-beam doping and in situ transport measurements.</p>
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<p>Transport characteristics of a graphene FET device on SiO<sub>2</sub>/Si substrate after e-beam-induced charge doping at 1 keV and 30 keV. (<b>a</b>) Sheet resistance <span class="html-italic">R</span><sub>sq</sub> (<span class="html-italic">V</span><sub>G</sub>) of graphene with multiple e-beam-induced doping at a beam energy of 1 keV. The curves are obtained after e-beam doping with <span class="html-italic">V</span><sub>G</sub> = <span class="html-italic">V</span><sub>SET</sub> ranging from −40 V to 40 V (from blue to red). Inset: optical image of the device. Scale bar, 10 μm. (<b>b</b>) Same as in (<b>a</b>), but at a beam energy of 30 keV. The device is highly electron-doped after 30 keV e-beam doping with a preset gate voltage <span class="html-italic">V</span><sub>SET</sub> = 30 V.</p>
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<p>Transport characteristics of a graphene FET device with an ALD-grown Al<sub>2</sub>O<sub>3</sub> layer on top of SiO<sub>2</sub>/Si substrate after e-beam-induced charge doping at 1 keV and 30 keV. (<b>a</b>) Sheet resistance <span class="html-italic">R</span><sub>sq</sub> (<span class="html-italic">V</span><sub>G</sub>) of graphene with multiple e-beam-induced doping at a beam energy of 1 keV. The curves are obtained after e-beam doping with <span class="html-italic">V</span><sub>G</sub> = <span class="html-italic">V</span><sub>SET</sub> ranging from −30 V to 30 V (from blue to red). Inset: optical image of the device. The thickness of the Al<sub>2</sub>O<sub>3</sub> layer is 50 nm. Scale bar, 10 μm. (<b>b</b>) Same as in (<b>a</b>), but at a beam energy of 30 keV. The device is highly electron (hole)-doped after 30 keV e-beam doping with <span class="html-italic">V</span><sub>G</sub> = <span class="html-italic">V</span><sub>SET</sub> = 30 V (−30 V).</p>
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<p>Summary of e-beam-induced doping effect at 1 keV and 30 keV in graphene FET devices. (<b>a</b>) The CNP shift <span class="html-italic">ΔV</span><sub>CNP</sub> (proportional to the doped carrier concentration) versus the corresponding <span class="html-italic">V</span><sub>SET</sub> for the e-beam doping at 1 keV. Purple and red curves represent results measured from graphene FET devices on SiO<sub>2</sub>/Si substrates without and with an ALD-grown Al<sub>2</sub>O<sub>3</sub> layer, respectively. Red and blue shaded regions indicate electron and hole doping induced by e-beam exposure, respectively. (<b>b</b>) Same as in (<b>a</b>), but at a beam energy of 30 keV.</p>
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<p>Proposed mechanism for the electron-beam-induced doping effect at 30 keV in graphene FET devices. (<b>a</b>) Schematic of the doping process and charge carrier distribution for 30 keV e-beam doping in graphene FET devices on SiO<sub>2</sub>/Si substrates for 30 keV e-beam doping at a positive preset voltage <span class="html-italic">V</span><sub>SET</sub>. (<b>b</b>) Schematic of the doping process and charge carrier distribution for 30 keV e-beam doping in graphene FET devices on Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub>/Si substrates for 30 keV e-beam doping at a positive preset voltage <span class="html-italic">V</span><sub>SET</sub>.</p>
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<p>Electron-beam-induced doping effect in a MoS<sub>2</sub> FET device with an ALD-grown Al<sub>2</sub>O<sub>3</sub> layer on top of SiO<sub>2</sub>/Si substrate. (<b>a</b>) Schematic of e-beam doping in the MoS<sub>2</sub> FET device on Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub>/Si substrate. (<b>b</b>,<b>c</b>): Transfer curves <span class="html-italic">I</span><sub>DS</sub> (<span class="html-italic">V</span><sub>G</sub>) of MoS<sub>2</sub> after e-beam doping with <span class="html-italic">V</span><sub>G</sub> = <span class="html-italic">V</span><sub>SET</sub> ranging from −20 V to 20 V (from blue to red) at 1 keV and 30 keV, respectively. The device is highly electron-doped with the threshold voltage well beyond −80 V after 30 keV e-beam doping at a preset voltage <span class="html-italic">V</span><sub>SET</sub> = 20 V. With e-beam doping at <span class="html-italic">V</span><sub>SET</sub> = −20 V, the threshold voltage is substantially shifted to the right, indicating an opposite doping effect, as shown in (<b>c</b>). Inset in (<b>b</b>): optical image of the device. The thickness of the Al<sub>2</sub>O<sub>3</sub> layer is 40 nm. Scale bar, 20 μm.</p>
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<p>Response time, stability, and repeatability of graphene FET device on Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub>/Si substrate after e-beam-induced charge doping at 10 keV. (<b>a</b>) Sheet resistance change of graphene during e-beam doping process at a beam energy of 10 keV while maintaining <span class="html-italic">V</span><sub>SET</sub> at 10 V. The electron beam is unblanked at 210 s and blanked again at 217 s. Inset: a zoomed-in figure that demonstrates a short doping response time of only a few seconds. (<b>b</b>) Stability of e-beam-induced doping in the graphene FET device. Sheet resistance of graphene versus time after doping as the SEM chamber transitions from vacuum to an ambient environment. (<b>c</b>) Repeatability of e-beam-induced doping in the graphene FET device. <span class="html-italic">V</span><sub>SET</sub> alternates between 10 V and −10 V three times.</p>
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9 pages, 2782 KiB  
Communication
Pillar Growth by Focused Electron Beam-Induced Deposition Using a Bimetallic Precursor as Model System: High-Energy Fragmentation vs. Low-Energy Decomposition
by Robert Winkler, Michele Brugger-Hatzl, Fabrizio Porrati, David Kuhness, Thomas Mairhofer, Lukas M. Seewald, Gerald Kothleitner, Michael Huth, Harald Plank and Sven Barth
Nanomaterials 2023, 13(21), 2907; https://doi.org/10.3390/nano13212907 - 6 Nov 2023
Cited by 3 | Viewed by 1668
Abstract
Electron-induced fragmentation of the HFeCo3(CO)12 precursor allows direct-write fabrication of 3D nanostructures with metallic contents of up to >95 at %. While microstructure and composition determine the physical and functional properties of focused electron beam-induced deposits, they also provide fundamental [...] Read more.
Electron-induced fragmentation of the HFeCo3(CO)12 precursor allows direct-write fabrication of 3D nanostructures with metallic contents of up to >95 at %. While microstructure and composition determine the physical and functional properties of focused electron beam-induced deposits, they also provide fundamental insights into the decomposition process of precursors, as elaborated in this study based on EDX and TEM. The results provide solid information suggesting that different dominant fragmentation channels are active in single-spot growth processes for pillar formation. The use of the single source precursor provides a unique insight into high- and low-energy fragmentation channels being active in the same deposit formation process. Full article
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<p>(<b>a</b>) High-pass filtered HAADF image showing Z-contrast within a cone fabricated at 20 keV and 20 pA. The insets give further examples as HAADF (focus pillar, 20 keV/7 pA; T<sub>P</sub> = 55 °C) and high-pass filtered HAADF (cone, 20 keV/7 pA). (<b>b</b>) HAADF of higher magnification and associated elemental maps for C, Co, and Fe. The EDX channels show a slight C enrichment, lower Co, and higher Fe content in the core (cone, 20 keV/129 pA).</p>
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<p>(<b>a</b>) Three-dimensional representation of the Co:Fe ratio along the main growth axis of a nanowire (NW), revealing the Fe-rich core and Co<sub>3</sub>Fe shell formation related to the HAADF image in (<b>b</b>). The locations are identified by the A and B labels along the blue arrow in the HAADF, as well as the 3D representation. (<b>b</b>) The cyan- and pink-framed graphs at the right are taken from the shown frames in the HAADF image and illustrate the lateral composition evolution of the inner Fe-rich channel with low effect of the onset in shell formation and the levelling off in the composition evolution in a 3:1 Co:Fe ratio (75:25 at %) for the continuing shell growth caused by low-energy electrons. The composition is simplified as being a purely metallic deposit even though small carbon and oxygen contents are present (&lt;7 at % in total).</p>
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<p>(<b>a</b>) The high-resolution HAADF image shows the crystalline nature of as-deposited Co<sub>3</sub>Fe nanocone bulk and (<b>b</b>) the tip area. (<b>c</b>,<b>d</b>) illustrate bright-field survey images of as-deposited and EBC-treated pillars with additional carbon coatings, where the EBC-induced formation of larger grain sizes up to ~20 nm is immediately evident. (<b>e</b>,<b>f</b>) show typical FFTs of these structures.</p>
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<p>Schematic representation of two dominating fragmentation channels of the heterometallic single-source precursor HFeCo<sub>3</sub>(CO)<sub>12</sub>.</p>
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12 pages, 2955 KiB  
Article
Oxidation-Induced Changes in the Lattice Structure of YSZ Deposited by EB-PVD in High-Vacuum Conditions
by Gye-Won Lee, In-Hwan Lee and Yoon-Suk Oh
Processes 2023, 11(9), 2743; https://doi.org/10.3390/pr11092743 - 14 Sep 2023
Viewed by 1239
Abstract
Yttria-stabilized zirconia (YSZ), a thermal barrier coating material characterized by low thermal conductivity, is typically deposited via electron beam-physical vapor deposition. Notably, oxygen depletion occurs during this process, causing color changes in YSZ. Therefore, YSZ is speculated to undergo phase transformation during this [...] Read more.
Yttria-stabilized zirconia (YSZ), a thermal barrier coating material characterized by low thermal conductivity, is typically deposited via electron beam-physical vapor deposition. Notably, oxygen depletion occurs during this process, causing color changes in YSZ. Therefore, YSZ is speculated to undergo phase transformation during this process, which demands careful consideration owing to its effect on the life of thermal coatings. To study this phenomenon, bulk samples were prepared, subjected to vacuum heat treatment to induce oxygen depletion, and followed by oxidative heat treatment. Experimental results showed that the color of the samples changed to black after the vacuum heat treatment and to a lighter color after the oxidative heat treatment. In addition, X-ray diffraction and Raman analyses were performed. The monoclinic phase formation was confirmed during the vacuum heat treatment; however, it disappeared after the oxidation heat treatment. The coating obtained in a high vacuum atmosphere exhibited a black color and cubic phase, which changed to a bright color and tetragonal phase after the oxidation heat treatment. Full article
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<p>Before Vacuum Heat Treatment 8 wt% YSZ Bulk Sample XRD Result.</p>
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<p>8 wt% YSZ Bulk Sample Image. (Sample gained from red circl).</p>
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<p>After Vacuum heat Treatment 8 wt% YSZ Bulk Sample XRD Result.</p>
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<p>After Heat Treatment 1000 °C-50 h 8 wt% YSZ Bulk Sample XRD Result.</p>
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<p>8 wt% YSZ Bulk Sample Raman Spectroscopy Result. (<b>a</b>) after Vacuum heat treatment (<b>b</b>) after Oxidation at 1000 °C-50 h.</p>
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<p>YSZ EB-PVD Coating Sample Image (<b>a</b>) after coating (<b>b</b>) after 1000 °C-50 h heat treatment.</p>
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<p>YSZ Coating Sample XRD Result After EB-PVD Coating. (<b>a</b>) XRD results of 10−80° scan (<b>b</b>) XRD results of 72−76° scan.</p>
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<p>YSZ Coating Sample XRD Result at 1000 °C-50 h heat treatment.</p>
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<p>YSZ Coating Raman Spectroscopy Result. (<b>a</b>) After Coating (<b>b</b>) After 1000 °C−50 h heat treatment.</p>
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12 pages, 7202 KiB  
Article
3D Magnonic Conduits by Direct Write Nanofabrication
by Sebastian Lamb-Camarena, Fabrizio Porrati, Alexander Kuprava, Qi Wang, Michal Urbánek, Sven Barth, Denys Makarov, Michael Huth and Oleksandr V. Dobrovolskiy
Nanomaterials 2023, 13(13), 1926; https://doi.org/10.3390/nano13131926 - 24 Jun 2023
Cited by 2 | Viewed by 1682
Abstract
Magnonics is a rapidly developing domain of nanomagnetism, with application potential in information processing systems. Realisation of this potential and miniaturisation of magnonic circuits requires their extension into the third dimension. However, so far, magnonic conduits are largely limited to thin films and [...] Read more.
Magnonics is a rapidly developing domain of nanomagnetism, with application potential in information processing systems. Realisation of this potential and miniaturisation of magnonic circuits requires their extension into the third dimension. However, so far, magnonic conduits are largely limited to thin films and 2D structures. Here, we introduce 3D magnonic nanoconduits fabricated by the direct write technique of focused-electron-beam induced deposition (FEBID). We use Brillouin light scattering (BLS) spectroscopy to demonstrate significant qualitative differences in spatially resolved spin-wave resonances of 2D and 3D nanostructures, which originates from the geometrically induced non-uniformity of the internal magnetic field. This work demonstrates the capability of FEBID as an additive manufacturing technique to produce magnetic 3D nanoarchitectures and presents the first report of BLS spectroscopy characterisation of FEBID conduits. Full article
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<p>(<b>a</b>) is a cartoon representation of the employed excitation and detection scheme. Radio frequency (RF) current (black arrows) injected to the CPW (yellow) generates an Oersted field, <math display="inline"><semantics> <msub> <mi mathvariant="normal">h</mi> <mi>rf</mi> </msub> </semantics></math>, around the conductors as indicated by the grey arrows. The Oersted field drives spin–wave dynamics in the magnonic conduit (purple) resulting in spin-wave (green) propagation along the length of the conduit. The BLS laser is indicated by the blue cone. Dimensions of the sample, CPW, and laser focus diameter are to scale. (<b>b</b>) is a schematic representation of the BLS optical path. CW = continuous wave, BS = beam splitter, PBS = polarised beam splitter, MO = microscope objective, FP = Fabry–Pérot pair. Inset is the Feynman diagram for the magnon creation interaction, demonstrating the inelastic scattering of the BLS process. Frequency and wave vector are represented by <math display="inline"><semantics> <mi>ω</mi> </semantics></math> and <b>k</b>, respectively, for the incident photon (i), signal photon (s), and spin wave (SW).</p>
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<p>AFM micrographs of both structures. (<b>a</b>) 2D sample (plank conduit) of thickness <math display="inline"><semantics> <mrow> <mn>0.08</mn> </mrow> </semantics></math> <math display="inline"><semantics> <mrow> <mi mathvariant="sans-serif">μ</mi> <mi mathvariant="normal">m</mi> </mrow> </semantics></math> and width <math display="inline"><semantics> <mrow> <mn>3.08</mn> </mrow> </semantics></math> <math display="inline"><semantics> <mi mathvariant="sans-serif">μ</mi> </semantics></math><math display="inline"><semantics> <mi mathvariant="normal">m</mi> </semantics></math>. (<b>b</b>) 3D sample (bumped conduit), the heights of the shoulders and the bump apex are <math display="inline"><semantics> <mrow> <mn>0.05</mn> </mrow> </semantics></math> <math display="inline"><semantics> <mrow> <mi mathvariant="sans-serif">μ</mi> <mi mathvariant="normal">m</mi> </mrow> </semantics></math> and <math display="inline"><semantics> <mrow> <mn>0.21</mn> </mrow> </semantics></math> <math display="inline"><semantics> <mrow> <mi mathvariant="sans-serif">μ</mi> <mi mathvariant="normal">m</mi> </mrow> </semantics></math>, respectively. Insets show the cross-sectional height profiles at the positions marked by the dotted lines. Circles (triangles) indicate the BLS laser position for each measurement under thermal (microwave) excitation. A scale dot showing the laser focus spot size is indicated on (<b>a</b>). An area scan over the boxed region of (<b>b</b>) was recorded to investigate the spatial distribution of the propagating spin-wave signal. The external magnetic field is oriented in the substrate plane along the conduits’ long axes, as indicated by the arrows.</p>
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<p>(<b>a</b>) Design schematic for the bumped conduit with the <span class="html-italic">z</span> dimension stretched for visibility, with simplified BLS operation schematic. Frequency-field plots of the thermally excited BLS-FMR measurements of the flat plank conduit (<b>b</b>), the bumped conduit at the shoulder (<b>c</b>), and the bump apex (<b>d</b>). The constant-frequency intensity peaks at 8.6 GHz and 12.7 GHz are laser side bands, as indicated. Mode number increases with increasing frequency for a given field. The colour scale indicates BLS intensity for all plots, normalised to the highest value in each plot.</p>
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<p>BLS data for a <math display="inline"><semantics> <mrow> <mi mathvariant="bold">k</mi> <mo>≠</mo> <mn>0</mn> </mrow> </semantics></math> mode under local microwave excitation from the CPW for the flat plank conduit (<b>a</b>), and the bumped conduit (<b>b</b>) measured at the bump apex; positions marked by triangles on <a href="#nanomaterials-13-01926-f002" class="html-fig">Figure 2</a>. A fit of the plank conduit peak positions to Equation (<a href="#FD1-nanomaterials-13-01926" class="html-disp-formula">1</a>) has been used to plot the dashed line on both panels. The dotted line on panel (<b>b</b>) differs only by the anisotropy field value. The colour scale indicates BLS intensity, normalised to the highest value in each plot.</p>
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<p>BLS colour map: 2D area plot of the bumped conduit over the region indicated in <a href="#nanomaterials-13-01926-f002" class="html-fig">Figure 2</a>. Signal has been corrected for reflectivity changes due to the surface curvature. Microwave pumping was applied for this measurement though the CPW at the top edge of the figure, with the ground conductor labelled. Colour scale indicates the logarithm of the BLS counts of the integrated signal peak normalised by the reflectivity. Vertical dashed lines show the side edges of the FEBID conduit, the horizontal dashed lines indicate the position of the lower CPW ground conductor.</p>
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23 pages, 6899 KiB  
Review
The 3D Controllable Fabrication of Nanomaterials with FIB-SEM Synchronization Technology
by Lirong Zhao, Yimin Cui, Junyi Li, Yuxi Xie, Wenping Li and Junying Zhang
Nanomaterials 2023, 13(12), 1839; https://doi.org/10.3390/nano13121839 - 11 Jun 2023
Cited by 1 | Viewed by 3519
Abstract
Nanomaterials with unique structures and functions have been widely used in the fields of microelectronics, biology, medicine, and aerospace, etc. With advantages of high resolution and multi functions (e.g., milling, deposition, and implantation), focused ion beam (FIB) technology has been widely developed due [...] Read more.
Nanomaterials with unique structures and functions have been widely used in the fields of microelectronics, biology, medicine, and aerospace, etc. With advantages of high resolution and multi functions (e.g., milling, deposition, and implantation), focused ion beam (FIB) technology has been widely developed due to urgent demands for the 3D fabrication of nanomaterials in recent years. In this paper, FIB technology is illustrated in detail, including ion optical systems, operating modes, and combining equipment with other systems. Together with the in situ and real-time monitoring of scanning electron microscopy (SEM) imaging, a FIB-SEM synchronization system achieved 3D controllable fabrication from conductive to semiconductive and insulative nanomaterials. The controllable FIB-SEM processing of conductive nanomaterials with a high precision is studied, especially for the FIB-induced deposition (FIBID) 3D nano-patterning and nano-origami. As for semiconductive nanomaterials, the realization of high resolution and controllability is focused on nano-origami and 3D milling with a high aspect ratio. The parameters of FIB-SEM and its working modes are analyzed and optimized to achieve the high aspect ratio fabrication and 3D reconstruction of insulative nanomaterials. Furthermore, the current challenges and future outlooks are prospected for the 3D controllable processing of flexible insulative materials with high resolution. Full article
(This article belongs to the Section Nanofabrication and Nanomanufacturing)
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<p>(<b>a</b>–<b>d</b>) Schematic diagrams of liquid metal ion source (LMIS) Ga, gas field ionization source (GFIS) He, inductively coupled plasma (ICP) source Xe, and electron cyclotron resonance (ECR) plasma ion source, respectively.</p>
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<p>FIB ion optical column.</p>
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<p>(<b>a</b>) Schematic of ion–solid interaction. Reprinted with permission from Ref. [<a href="#B32-nanomaterials-13-01839" class="html-bibr">32</a>]. Copyright 2021, The Royal Society of Chemistry. (<b>b</b>–<b>d</b>) Basic operating modes of FIB processing of milling (<b>b</b>) milling, (<b>c</b>) deposition, and (<b>d</b>) ion implantation. Reprinted with permission from Ref. [<a href="#B33-nanomaterials-13-01839" class="html-bibr">33</a>]. Copyright 2011, Elsevier Ltd.</p>
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<p>FIBID-based W nano bridge on SiO<sub>2</sub> substrate. Reprinted with permission from Ref. [<a href="#B48-nanomaterials-13-01839" class="html-bibr">48</a>]. Copyright 2007, Elsevier B.V.</p>
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<p><b>D</b>istributions of <b>i</b>mplanted (<b>a</b>) Ga<sup>+</sup> and (<b>b</b>) Ne<sup>+</sup> in SiO<sub>2</sub> substrate. Reprinted with permission from Ref. [<a href="#B54-nanomaterials-13-01839" class="html-bibr">54</a>]. Copyright 2018, IOP Publishing Ltd.</p>
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<p>FIB-SEM dual-beam system.</p>
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<p>(<b>a</b>) Triple-beam system of FIB-SEM-Ar. (<b>b</b>) Ga-He-Ne multi-beam system. Reprinted with permission from Ref. [<a href="#B75-nanomaterials-13-01839" class="html-bibr">75</a>]. Copyright 2013, AIP Publishing LLC.</p>
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<p>(<b>a</b>) Deposited devices prepared for temperature-dependent electrical conductivity measurements (scale bar: 2 μm). Reprinted with permission from Ref. [<a href="#B91-nanomaterials-13-01839" class="html-bibr">91</a>]. Copyright 2013, IOP Publishing Ltd. (<b>b</b>) FIBID-based Pt-W nanothermocouple is used to measure the temperature near 100 nm on the substrate. Reprinted with permission from Ref. [<a href="#B92-nanomaterials-13-01839" class="html-bibr">92</a>]. Copyright 2009, Elsevier B.V. (<b>c</b>) Nanocage construction with Pt wire for single crystalline ZnO tube immobilization (scale bar: 1 μm). Reprinted with permission from Ref. [<a href="#B93-nanomaterials-13-01839" class="html-bibr">93</a>]. Copyright 2013, Spring Nature.</p>
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<p>(<b>a</b>) SEM images of a single grain boundary (GB) junction before and after FIB milling. Reprinted with permission from Ref. [<a href="#B94-nanomaterials-13-01839" class="html-bibr">94</a>]. Copyright 2015, Wiley-VCH. (<b>b</b>) Nanogap fine-tuning using substrate swelling induced by helium ion implantation. Reprinted with permission from Ref. [<a href="#B4-nanomaterials-13-01839" class="html-bibr">4</a>]. Copyright 2022, Wiley-VCH.</p>
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<p>(<b>a</b>) SEM images of nanohelices under different beam energies and step sizes; and (<b>b</b>) array of 20 × 20 nanohelices fabricated by FIBID. Reprinted with permission from Ref. [<a href="#B97-nanomaterials-13-01839" class="html-bibr">97</a>]. Copyright 2014, American Chemical Society. (<b>c</b>) W-C nanohelices grown by He<sup>+</sup> FIB. Nanohelices of types 1–5 were grown by keeping the fixed nominal circular diameter of 75 nm and varying the beam dwell time from 700 to 2400 ms, while types 6–8 were grown by keeping the fixed nominal circular diameter of 200 nm and varying the beam dwell time from 650 to 2000 ms. Reprinted with permission from Ref. [<a href="#B98-nanomaterials-13-01839" class="html-bibr">98</a>]. Copyright 2019, American Chemical Society.</p>
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<p>(<b>a</b>) The nano deformation is affected by irradiation mode. (<b>b</b>) The nano deformation is affected by ion dose. (<b>c</b>–<b>f</b>) Different 3D folding structures (<b>c</b>) metallic structures made of Al/Cr thin film before FIB irradiation. Inset: the final 3D structures after FIB irradiation; (<b>d</b>) a flower-shaped structure under global FIB irradiation; (<b>e</b>) origami of an expandable dome (corresponding to a traditional Chinese origami named “pulling flower”); and (<b>f</b>) a 12-blade propeller. (<b>a</b>,<b>d</b>) Reprinted with permission from [<a href="#B105-nanomaterials-13-01839" class="html-bibr">105</a>]. Copyright 2018, AIP Publishing. (<b>b</b>,<b>e</b>,<b>f</b>) Reprinted with permission from [<a href="#B101-nanomaterials-13-01839" class="html-bibr">101</a>]. Copyright 2018, American Association for the Advancement of Science. (<b>c</b>) Reprinted with permission from [<a href="#B106-nanomaterials-13-01839" class="html-bibr">106</a>], Copyright 2011, Elsevier B.V.</p>
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<p>(<b>a</b>,<b>b</b>) SEM images of chiral patterning on Si/Al<sub>2</sub>O<sub>3</sub> produced by digitally controlled FIB: (<b>a</b>) normal view with the FIB paths and directions (curved arrows) and the square unit cell (dashed boundary); and (<b>b</b>) SEM-image of the sample tilted by 52°; Reprinted with permission from [<a href="#B108-nanomaterials-13-01839" class="html-bibr">108</a>]. Copyright 2018, Spring Nature. (<b>c</b>) Schematic diagram of toroidal molecule folded by ion beam. (<b>d</b>) SEM images of toroidal metamaterial array for SiNx. Reprinted with permission from [<a href="#B110-nanomaterials-13-01839" class="html-bibr">110</a>]. Copyright 2017, WILEY-VCH Verlag GmbH &amp; Co. kGaA.</p>
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<p>(<b>a</b>) The PL spectrum of single ZnO NWs measured at 300 K. Inset: an SEM image of the ZnO NW FET. (<b>b</b>) I<sub>sd</sub>–V<sub>sd</sub> curves before and after ion irradiation. Reprinted with permission from [<a href="#B117-nanomaterials-13-01839" class="html-bibr">117</a>]. Copyright 2011, IOP Publishing Ltd. (<b>c</b>) Experimental setup for the measurement of the interlayer photocurrent of the WSe<sub>2</sub>/graphene (W/G) heterostructure. (<b>d</b>) Transfer characteristics of the W/G photodiode. Reprinted with permission from [<a href="#B118-nanomaterials-13-01839" class="html-bibr">118</a>]. Copyright 2018, American Chemical Society.</p>
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<p>Cross-sectional SEM images of InSb nanocell lattices fabricated using 30 kV Ga<sup>+</sup> FIB after (<b>a</b>) scan 5 and (<b>b</b>) scan 10; and (<b>c</b>) sizes of nanocell lattice versus beam scan. Reprinted with permission from [<a href="#B120-nanomaterials-13-01839" class="html-bibr">120</a>]. Copyright 2016, Elsevier B.V.</p>
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<p>SEM images with different views of the nano-tunnel structures with a high aspect ratio (<b>a</b>) plan view; and (<b>b</b>) cross-section view. Reprinted with permission from [<a href="#B126-nanomaterials-13-01839" class="html-bibr">126</a>]. Copyright 2009, IOP Publishing Ltd. SEM images of ~1 µm thick PMMA on Cr/Si substrate (<b>c</b>) Period = 200 nm, line bias = 15 nm; and (<b>d</b>) period = 160 nm, line bias = 25 nm. Reprinted with permission from [<a href="#B127-nanomaterials-13-01839" class="html-bibr">127</a>]. Copyright 2009, Elsevier B.V.</p>
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<p>SEM image of a 970 nm diameter nanofiber-based milling using a Ga<sup>+</sup> FIB. The measured size is ~141.6 nm × 130.4 nm with a pitch of ~326.3 nm. Reprinted with permission from [<a href="#B129-nanomaterials-13-01839" class="html-bibr">129</a>]. Copyright 2017, AIP Publishing.</p>
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13 pages, 13425 KiB  
Article
Comparative Study of Mechanical Performance of AlCrSiN Coating Deposited on WC-Co and cBN Hard Substrates
by Jing Liang, Marc Serra, Sandra Gordon, Jonathan Fernández de Ara, Eluxka Almandoz, Luis Llanes and Emilio Jimenez-Piqué
Ceramics 2023, 6(2), 1238-1250; https://doi.org/10.3390/ceramics6020075 - 9 Jun 2023
Cited by 1 | Viewed by 1950
Abstract
The objective of this study is to explore and compare the mechanical response of AlCrSiN coatings deposited on two different substrates, namely, WC-Co and cBN. Nano-indentation was used to measure the hardness and elastic modulus of the coatings, and micro-indentation was used for [...] Read more.
The objective of this study is to explore and compare the mechanical response of AlCrSiN coatings deposited on two different substrates, namely, WC-Co and cBN. Nano-indentation was used to measure the hardness and elastic modulus of the coatings, and micro-indentation was used for observing the contact damage under Hertzian contact with monotonic and cyclic (fatigue) loads. Microscratch and contact damage tests were also used to evaluate the strength of adhesion between the AlCrSiN coatings and the two substrates under progressive and constant loads, respectively. The surface damages induced via different mechanical tests were observed using scanning electron microscopy (SEM). A focused ion beam (FIB) was used to produce a cross-section of the coating–substrate system in order to further detect the mode and extent of failure that was induced. The results show that the AlCrSiN coating deposited on the WC-Co substrate performed better in regard to adhesion strength and contact damage response than the same coating deposited on the cBN substrate; this is attributed to the lower plasticity of the cBN substrate as well as its less powerful adhesion to the coating. Full article
(This article belongs to the Special Issue Ceramic Coatings for High-Temperature Applications)
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<p>XRD patterns of AlCrSiN coatings deposited on (<b>a</b>) WC-Co and (<b>b</b>) cBN substrates. The coatings present a (Cr,Al)N crystallographic phase.</p>
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<p>SEM micrograph of the cross-section and the EDX composition maps for corresponding areas. (<b>a</b>) AlCrSiN coating deposited on WC-Co substrate, (<b>b</b>) AlCrSiN coating deposited on cBN substrate together with the platinum layer to avoid the waterfall effect during milling procedure, and the crack in the coating and substrate was caused by the scratch test.</p>
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<p>SEM images of nano-indentation, (<b>a</b>) AlCrSiN coating deposited on WC-Co substrate, (<b>b</b>) AlCrSiN coating deposited on cBN substrate, (<b>c</b>) magnification of the circumferential cracks highlighted with dotted circle on the image (<b>b</b>).</p>
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<p>The optical profile and SEM images of failure after scratch tests of AlCrSiN coatings deposited on WC-Co and cBN, two different substrates. The second critical loads (<span class="html-italic">L<sub>C2</sub></span>) are magnified in the images of (<b>a</b>,<b>b</b>), respectively. (<b>c</b>) shows the scenario in which cBN substrate was totally exposed after receiving more of the second critical load. The first critical loads (<span class="html-italic">L<sub>C1</sub></span>) are magnified in the images of (<b>d</b>,<b>e</b>), respectively.</p>
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<p>SEM images of the contact damage tests of AlCrSiN coatings at 98 N, 196 N, and 294 N with a Rockwell C tip for both substrates. Contact area of the coating on WC-Co for 98 N is indicated.</p>
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<p>SEM images of the contact damage tests of AlCrSiN coatings deposited on cBN substrates with a Rockwell C tip. The failures in (<b>a<sub>1</sub></b>,<b>a<sub>2</sub></b>) were under 9.8 N and in (<b>b<sub>1</sub></b>,<b>b<sub>2</sub></b>) were at 29.4 N.</p>
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<p>SEM images of damage features of AlCrSiN coatings deposited on WC-Co and cBN substrates induced via spherical indentation under different loads (2000 N, 3000 N, 5000 N, and 6000 N).</p>
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<p>SEM images of spherical indentation cyclic loads with 10<sup>3</sup> cycles. (<b>a<sub>1</sub></b>) AlCrSiN coating deposited on WC-Co substrate under the load of 5000 N; (<b>b<sub>1</sub></b>) AlCrSiN coating deposited on cBN substrate under the load of 2000 N.</p>
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<p>Cross-section SEM images of indentations and morphologies of fatigue cracks. (<b>a<sub>1</sub><sub>,</sub>a<sub>2</sub></b>) present the sample of AlCrSiN coating deposited on WC-Co substrate under the cyclic load of 6000 N with 10<sup>3</sup> cycles, (<b>b<sub>1</sub><sub>,</sub>b<sub>2</sub></b>) present the sample of AlCrSiN coating deposited on cBN substrate under the cyclic load of 3000 N with 10<sup>3</sup> cycles. (<b>a<sub>2</sub></b>,<b>b<sub>2</sub></b>) are the enlarged views of the corresponding areas in (<b>a<sub>1</sub></b>,<b>b<sub>1</sub></b>), respectively.</p>
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16 pages, 3984 KiB  
Article
Microstructural and Morphological Characterization of the Cobalt-Nickel Thin Films Deposited by the Laser-Induced Thermionic Vacuum Arc Method
by Virginia Dinca, Aurelia Mandes, Rodica Vladoiu, Gabriel Prodan, Victor Ciupina and Silviu Polosan
Coatings 2023, 13(6), 984; https://doi.org/10.3390/coatings13060984 - 25 May 2023
Cited by 1 | Viewed by 1873
Abstract
Laser Induced-Thermionic Vacuum Arc (LTVA) technology was used for depositing uniform intermetallic CoNi thin films of 100 nm thickness. LTVA is an original deposition method using a combination of the typical Thermionic Vacuum Arc (TVA) system and a laser beam provided by a [...] Read more.
Laser Induced-Thermionic Vacuum Arc (LTVA) technology was used for depositing uniform intermetallic CoNi thin films of 100 nm thickness. LTVA is an original deposition method using a combination of the typical Thermionic Vacuum Arc (TVA) system and a laser beam provided by a QUANTEL Q-Smart 850 Nd:YAG compact Q-switched laser with a second harmonic module. The novelty is related to the simultaneous deposition of a bi-component metallic thin film using photonic processes of the laser over the plasma deposition, which improves the roughness but also triggers the composition of the deposited thin film. Structural analysis of the deposited thin films confirms the formation of face-centered cubic (fcc) as the main phase CoNi and hexagonal Co3Ni as the minority phase, observed mainly using high-resolution transmission electron microscopy. The magneto-optical measurements suggest an isotropic distribution of the CoNi alloy thin films for the in-plan angular rotation. From the low coercive field of Hc = 40 Oe and a saturation field at 900 Oe, the CoNi thin films obtained by LTVA are considered semi-hard magnetic materials. Magnetic force microscopy reveals spherical magnetic nanoparticles with mean size of about 40–50 nm. The resistivity was estimated at ρ = 34.16 μΩ cm, which is higher than the values for bulk Co and Ni. Full article
(This article belongs to the Special Issue Nanostructured Materials Deposition Techniques and Characterization)
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<p>Schematic of the experimental LTVA system for CoNi thin film deposition.</p>
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<p>X-ray diffraction patterns of the CoNi thin film (<b>a</b>) and details of the (111) peak (<b>b</b>).</p>
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<p>HRTEM image (<b>a</b>) with SAED determination (<b>b</b>) and estimation of nanocrystal dimension based on LogNormal analysis (<b>c</b>).</p>
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<p>X-ray reflectometry of CoNi thin film.</p>
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<p>SEM micrographs recorded on CoNi sample-2D image (<b>a</b>) and 3D image (<b>b</b>).</p>
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<p>EDX patterns of CoNi thin films.</p>
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<p>AFM image of the CoNi thin films: (<b>a</b>) 20 × 20 μm and (<b>b</b>) 1 × 1 μm. MFM images of the CoNi thin films: (<b>c</b>) 20 × 20 μm and (<b>d</b>) 1 × 1 μm.</p>
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<p>MOKE curves for three in-plan orientations (<b>a</b>) and the angle dependence of the coercive field (<b>b</b>).</p>
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<p>Current-voltage measurements at T = 295 K.</p>
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<p>Resistivity versus temperature.</p>
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14 pages, 2133 KiB  
Article
Ligand Size and Carbon-Chain Length Study of Silver Carboxylates in Focused Electron-Beam-Induced Deposition
by Jakub Jurczyk, Katja Höflich, Katarzyna Madajska, Luisa Berger, Leo Brockhuis, Thomas Edward James Edwards, Czesław Kapusta, Iwona B. Szymańska and Ivo Utke
Nanomaterials 2023, 13(9), 1516; https://doi.org/10.3390/nano13091516 - 29 Apr 2023
Cited by 3 | Viewed by 1787
Abstract
Gas-assisted focused electron-beam-induced deposition is a versatile tool for the direct writing of complex-shaped nanostructures with unprecedented shape fidelity and resolution. While the technique is well-established for various materials, the direct electron beam writing of silver is still in its infancy. Here, we [...] Read more.
Gas-assisted focused electron-beam-induced deposition is a versatile tool for the direct writing of complex-shaped nanostructures with unprecedented shape fidelity and resolution. While the technique is well-established for various materials, the direct electron beam writing of silver is still in its infancy. Here, we examine and compare five different silver carboxylates, three perfluorinated: [Ag2(µ-O2CCF3)2], [Ag2(µ-O2CC2F5)2], and [Ag2(µ-O2CC3F7)2], and two containing branched substituents: [Ag2(µ-O2CCMe2Et)2] and [Ag2(µ-O2CtBu)2], as potential precursors for focused electron-beam-induced deposition. All of the compounds show high sensitivity to electron dissociation and efficient dissociation of Ag-O bonds. The as-deposited materials have silver contents from 42 at.% to above 70 at.% and are composed of silver nano-crystals with impurities of carbon and fluorine between them. Precursors with the shortest carbon-fluorine chain ligands yield the highest silver contents. In addition, the deposited silver content depends on the balance of electron-induced ligand co-deposition and ligand desorption. For all of the tested compounds, low electron flux was related to high silver content. Our findings demonstrate that silver carboxylates constitute a promising group of precursors for gas-assisted focused electron beam writing of high silver content materials. Full article
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<p>Structural formulae of studied silver precursors, sorted with increasing number of carbon atoms in ligands from left to right (<b>a</b>) silver trifluoroacetate, (<b>b</b>) silver pentafluoropropionate, (<b>c</b>) silver heptafluorobutyrate, (<b>d</b>) silver pivalate, (<b>e</b>) silver 2,2-dimethylbutyrate (or dimethylbutanoato-κO). The perfluorinated silver carboxylates form a series with carbon chain lengths of two to four carbon atoms and the non-fluorinated carboxylates continue with branched ligands containing five to six carbon atoms. The atomic ratios are noted for each precursor.</p>
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<p>SEM top view images of FEBID square deposits of 10 × 10 µm<sup>2</sup> from different silver carboxylates. The box (dashed blue line) represents the nominal size of the deposit. (<b>a</b>–<b>c</b>) show the fluorinated carboxylates, (<b>d</b>,<b>e</b>) show non-fluorinated carboxylates. The size of the scale bar is 10 µm. (<b>f</b>) HR-TEM image of an individual silver nanocrystal obtained by FEBID with [Ag<sub>2</sub>(µ-O<sub>2</sub>CCF<sub>3</sub>)<sub>2</sub>]. Comparable nanocrystals were also observed for [Ag<sub>2</sub>(O<sub>2</sub>CC<sub>3</sub>F<sub>7</sub>)<sub>2</sub>] and [Ag<sub>2</sub>(µ-O<sub>2</sub>CC(Me)<sub>2</sub>Et)<sub>2</sub>]. The diffraction inset indicates pure silver by indexing.</p>
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<p>Box plot showing the median value (solid horizontal line), mean value (square), the quartile box, and the minimum and maximum values of compositions measured on at least four FEBID square deposits from each precursor indicated by the number of carbon atoms contained in the ligand of the pristine precursor molecule, see <a href="#nanomaterials-13-01516-f001" class="html-fig">Figure 1</a>. Values are not corrected for carbon contamination build-up during EDX, see <a href="#sec2dot4-nanomaterials-13-01516" class="html-sec">Section 2.4</a>.</p>
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<p>(<b>a</b>–<b>e</b>) SEM top view images of FEBID spots. Irradiation was with 20 kV for 5 min using different silver carboxylates, top: fluorinated silver carboxylates and bottom non-fluorinated silver carboxylates. Precursors are indicated. The primary electron beam (FW99) and the visible halo periphery are indicated by orange circles and blue half circles, respectively. Correspondingly coloured electron flux values in e<sup>−</sup>/(nm<sup>2</sup>s) were calculated from the Monte Carlo simulated BSE profile in (<b>f</b>). The blue band in (<b>f</b>) comprises the maximum extensions of the halo regions and its corresponding flux ranges for deposits made with all of the compounds. The dashed line corresponds to FW(99.9%)/2 of electrons. Yellow circles indicate the spots were EDX measurements were taken. The size of the circles corresponds to the maximum EDX excitation range. Note that there was a slight drift in (<b>d</b>) during FEBID.</p>
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12 pages, 1878 KiB  
Article
Highly Regular LIPSS on Thin Molybdenum Films: Optimization and Generic Criteria
by Juraj Sládek, Kryštof Hlinomaz, Inam Mirza, Yoann Levy, Thibault J.-Y. Derrien, Martin Cimrman, Siva S. Nagisetty, Jan Čermák, The Ha Stuchlíková, Jiří Stuchlík and Nadezhda M. Bulgakova
Materials 2023, 16(7), 2883; https://doi.org/10.3390/ma16072883 - 4 Apr 2023
Cited by 6 | Viewed by 2015
Abstract
A systematic experimental study was performed to determine laser irradiation conditions for the large-area fabrication of highly regular laser-induced periodic surface structures (HR-LIPSS) on a 220 nm thick Mo film deposited on fused silica. The LIPSS were fabricated by scanning a linearly polarized, [...] Read more.
A systematic experimental study was performed to determine laser irradiation conditions for the large-area fabrication of highly regular laser-induced periodic surface structures (HR-LIPSS) on a 220 nm thick Mo film deposited on fused silica. The LIPSS were fabricated by scanning a linearly polarized, spatially Gaussian laser beam at 1030 nm wavelength and 1.4 ps pulse duration over the sample surface at 1 kHz repetition rate. Scanning electron microscope images of the produced structures were analyzed using the criterion of the dispersion of the LIPSS orientation angle (DLOA). Favorable conditions, in terms of laser fluence and beam scanning overlaps, were identified for achieving DLOA values <10. To gain insight into the material behavior under these irradiation conditions, a theoretical analysis of the film heating was performed, and surface plasmon polariton excitation is discussed. A possible effect of the film dewetting from the dielectric substrate is deliberated. Full article
(This article belongs to the Special Issue Advances in Laser Materials and Processing Technologies)
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<p>Differential interference contrast optical microscope image (<b>a</b>) and a 3 × 3 µm AFM image (<b>b</b>) of the non-irradiated surface of the Mo film. (<b>c</b>) Surface roughness profile in the middle of the AFM image shown in (<b>b</b>).</p>
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<p>(<b>a</b>–<b>c</b>) Morphology and DLOA of the LIPSS obtained at three different orientations of laser polarization (<span class="html-italic">E</span>) relative to laser scanning direction (<span class="html-italic">V</span>). The inset in each SEM image shows corresponding 2D-FFT with LIPSS periodicity indicated. In all cases, laser irradiation parameters were: <math display="inline"><semantics> <msub> <mi>F</mi> <mi mathvariant="normal">p</mi> </msub> </semantics></math> = 0.266 J/cm<math display="inline"><semantics> <msup> <mrow/> <mn>2</mn> </msup> </semantics></math>, <math display="inline"><semantics> <msub> <mi>O</mi> <mi>x</mi> </msub> </semantics></math> = 92.3 %, <math display="inline"><semantics> <mrow> <mo>Δ</mo> <mi>y</mi> </mrow> </semantics></math> = 8 µm, <math display="inline"><semantics> <msub> <mi>O</mi> <mi>y</mi> </msub> </semantics></math> = 75.4 %, effective number of pulses per irradiation spot <math display="inline"><semantics> <mrow> <mi>N</mi> <mo>∼</mo> <mn>53</mn> </mrow> </semantics></math>. (<b>d</b>) AFM image of one of the strongly ablated areas. Such areas are highlighted by dotted circles in (<b>b</b>,<b>c</b>).</p>
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<p>Map of the DLOA values for LIPSS fabricated on the Mo thin films at <math display="inline"><semantics> <msub> <mi>F</mi> <mi mathvariant="normal">p</mi> </msub> </semantics></math> = 0.266 J/cm<math display="inline"><semantics> <msup> <mrow/> <mn>2</mn> </msup> </semantics></math> and uni-directional scanning as a function of <math display="inline"><semantics> <msub> <mi>O</mi> <mi>x</mi> </msub> </semantics></math> and <math display="inline"><semantics> <msub> <mi>O</mi> <mi>y</mi> </msub> </semantics></math>. The laser polarization was parallel to the scanning direction. The map is created by interpolation between the DLOA of 24 different irradiations, each marked by a white dot.</p>
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<p>DLOA values for the cases of uni- and bi-directional laser scanning (<math display="inline"><semantics> <msub> <mi>O</mi> <mi>x</mi> </msub> </semantics></math> = 95.1% and <math display="inline"><semantics> <msub> <mi>O</mi> <mi>y</mi> </msub> </semantics></math> = 66.2%) at three different laser fluences.</p>
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<p>(<b>a</b>) Magnified view of the <a href="#materials-16-02883-f002" class="html-fig">Figure 2</a>a. (<b>b</b>–<b>d</b>) EDX maps showing Mo, Si, and O contents respectively. (<b>e</b>) Chemical composition measured across the white line marked in (<b>a</b>). Colors of the lines correspond to the colors in (<b>b</b>–<b>d</b>). The white crosses are added for guiding an eye, marking the same position in all maps.</p>
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<p>(<b>a</b>) AFM image of the LIPSS obtained under the same irradiation conditions as in <a href="#materials-16-02883-f002" class="html-fig">Figure 2</a>a, showing an edge of the scanned region. (<b>b</b>) Surface relief along the line 1 in (<b>a</b>). (<b>c</b>) The minima (red line) and maxima (black line) of the structured area within the rectangular region 2 in (<b>a</b>) along its long side are given to illustrate how the depth of the structures is evolving from the virgin surface towards the regular LIPSS region.</p>
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<p>Evolution of the lattice temperature profile toward the depth of the laser-irradiated Mo film for different time moments counted from the laser pulse maximum (color online). The TTM simulations were performed for a single laser pulse action at the irradiation conditions of the present experiments (<math display="inline"><semantics> <mrow> <msub> <mi>F</mi> <mi mathvariant="normal">p</mi> </msub> <mo>=</mo> <mn>0.267</mn> </mrow> </semantics></math> J/cm). The melting temperature of <math display="inline"><semantics> <mrow> <msub> <mi>T</mi> <mi mathvariant="normal">m</mi> </msub> <mo>=</mo> <mn>2897</mn> </mrow> </semantics></math> K is marked by the red dotted line. The black dashed vertical line shows the Mo-glass interface. The laser pulse comes from the left. In the inset, the evolution of the molten layer thickness is given.</p>
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17 pages, 6715 KiB  
Article
Additive Manufacturing of Co3Fe Nano-Probes for Magnetic Force Microscopy
by Robert Winkler, Michele Brugger-Hatzl, Lukas Matthias Seewald, David Kuhness, Sven Barth, Thomas Mairhofer, Gerald Kothleitner and Harald Plank
Nanomaterials 2023, 13(7), 1217; https://doi.org/10.3390/nano13071217 - 29 Mar 2023
Cited by 10 | Viewed by 2925
Abstract
Magnetic force microscopy (MFM) is a powerful extension of atomic force microscopy (AFM), which mostly uses nano-probes with functional coatings for studying magnetic surface features. Although well established, additional layers inherently increase apex radii, which reduce lateral resolution and also contain the risk [...] Read more.
Magnetic force microscopy (MFM) is a powerful extension of atomic force microscopy (AFM), which mostly uses nano-probes with functional coatings for studying magnetic surface features. Although well established, additional layers inherently increase apex radii, which reduce lateral resolution and also contain the risk of delamination, rendering such nano-probes doubtful or even useless. To overcome these limitations, we now introduce the additive direct-write fabrication of magnetic nano-cones via focused electron beam-induced deposition (FEBID) using an HCo3Fe(CO)12 precursor. The study first identifies a proper 3D design, confines the most relevant process parameters by means of primary electron energy and beam currents, and evaluates post-growth procedures as well. That way, highly crystalline nano-tips with minimal surface contamination and apex radii in the sub-15 nm regime are fabricated and benchmarked against commercial products. The results not only reveal a very high performance during MFM operation but in particular demonstrate virtually loss-free behavior after almost 8 h of continuous operation, thanks to the all-metal character. Even after more than 12 months of storage in ambient conditions, no performance loss is observed, which underlines the high overall performance of the here-introduced FEBID-based Co3Fe MFM nano-probes. Full article
(This article belongs to the Special Issue Preparation and Application of Nanowires: 2nd Edition)
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<p>Design aspects of FEBID-based Co<sub>3</sub>Fe MFM tips. (<b>a</b>) tip-less SS-CL with a flexible electrode system (yellow) to adapt to different AFM probe concepts (Nice CL, GETec Microscopy) [<a href="#B39-nanomaterials-13-01217" class="html-bibr">39</a>], revealing a nano-tip at the very end (red). While (<b>b</b>) shows a single pillar, produced by a static e-beam (5 keV, 5.2 pA, same scale bar as in (<b>e</b>)), (<b>c</b>) gives a 3D-nano printed Co<sub>3</sub>Fe hollow cone (20 keV, 53 pA, 1250 s) following a previous CAFM concept [<a href="#B24-nanomaterials-13-01217" class="html-bibr">24</a>]. (<b>d</b>) shows the α-pillar patterning scheme, where the initial BB of 200 nm changes stepwise to in-focus conditions. (<b>e</b>) shows the result for such a sequence, with the same TETs as for the hollow cone in (<b>c</b>) (ETs were 500-250-200-150-100-50 s). (<b>f</b>) shows a SEM image of an α-pillar apex (r~10 nm) in direct comparison to a commercial MFM tip (MESP, Bruker), where the radius reduction is evident (<b>g</b>) (same scale bar as in (<b>f</b>)).</p>
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<p>(<b>a</b>) Co<sub>3</sub>Fe α-pillar shapes for varying primary electron energies (increasing from left to right), fabricated at high (100 pA, upper row) and low beam currents (10 pA, lower row). The same patterning sequence was used for all fabricated α-pillars with a total exposure time of 750 s, as described in the main text. While yellow arrows indicate beam-blur steps in the morphology, red arrows indicate the indent formation. (<b>b</b>) shows the current dependent evolution of apex radii (top triangles) and base widths (bottom squares) for α-pillars produced at 20 keV, which were further used for MFM measurements.</p>
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<p><math display="inline"><semantics> <mrow> <mn>2</mn> <mo>×</mo> <mn>2</mn> <mo> </mo> <msup> <mrow> <mi mathvariant="sans-serif">µ</mi> <mi mathvariant="normal">m</mi> </mrow> <mn>2</mn> </msup> </mrow> </semantics></math> wide MFM phase maps of the CoPt multilayer sample, imaged with α-pillars fabricated at different <math display="inline"><semantics> <mrow> <msub> <mi>E</mi> <mn>0</mn> </msub> </mrow> </semantics></math>, while patterning design and <math display="inline"><semantics> <mrow> <msub> <mi>I</mi> <mn>0</mn> </msub> </mrow> </semantics></math> were kept identical and similar, respectively, as specified in the main text.</p>
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<p><math display="inline"><semantics> <mrow> <mn>2</mn> <mo>×</mo> <mn>2</mn> <mo> </mo> <msup> <mrow> <mi mathvariant="sans-serif">µ</mi> <mi mathvariant="normal">m</mi> </mrow> <mn>2</mn> </msup> </mrow> </semantics></math> wide MFM phase maps of the CoPt multilayer sample, imaged with α-pillars of similar heights, fabricated at <math display="inline"><semantics> <mrow> <mn>20</mn> <mo> </mo> <mi>keV</mi> </mrow> </semantics></math>, while <math display="inline"><semantics> <mrow> <msub> <mi>I</mi> <mn>0</mn> </msub> </mrow> </semantics></math> was varied from <math display="inline"><semantics> <mrow> <mn>6.9</mn> <mo>−</mo> <mn>220</mn> <mo> </mo> <mi>pA</mi> </mrow> </semantics></math>. For lowest currents, the MFM performance was very unstable, as shown by three representative images on the top left. The right SEM images show the respective Co<sub>3</sub>Fe probes; the scale bar of 6.9 pA applies to all.</p>
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<p>TEM characterization of Co<sub>3</sub>Fe pillars. (<b>a</b>) high-resolution TEM image of the tip region confirms the high degree of crystallinity, the contamination-free character, and the sharp apex. (<b>b</b>) high-pass filtered TEM-HAADF image of a <math display="inline"><semantics> <mrow> <mn>20</mn> <mrow> <mo> </mo> <mi>keV</mi> </mrow> <mo>/</mo> <mn>81</mn> <mo> </mo> <mi>pA</mi> </mrow> </semantics></math> Co<sub>3</sub>Fe α-pillar, which reveals a dark core in the center. (<b>c</b>) Scanning-TEM EDX map of Fe and Co distribution at the tip region, which reveals Fe-richer core, while surrounding areas are closer to the expected Co<sub>3</sub>Fe composition.</p>
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<p>Impact of electron beam curing on Co<sub>3</sub>Fe α-pillars. Results (MFM phase, HAADF image, and Fast Fourier Transformation) of as-deposited tips are framed in blue, and the red box presents the results after curing. Scale and color bars apply for each image type.</p>
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<p>MFM-map comparison between well-established commercial MFM tips (MESP, Bruker) and FEBID Co<sub>3</sub>Fe α-pillars for the CoPt sample (<b>a</b>,<b>b</b>) and a magnetic hard disc drive (<b>c</b>), revealing sharper features and reduced noise. The latter is also evident in (<b>b</b>) by 3D representations of MFM maps on a CoPt sample, which are vertically adapted to achieve a similar 3D effect.</p>
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<p>Wear testing of Co<sub>3</sub>Fe α-pillars, performed on a CoPt sample. The comparison shows the first and the last height image (<b>a</b>) and MFM-maps (<b>b</b>) after almost <math display="inline"><semantics> <mrow> <mn>8</mn> <mo> </mo> <mi mathvariant="normal">h</mi> </mrow> </semantics></math> of continuous scanning along a distance of <math display="inline"><semantics> <mrow> <mn>46</mn> <mo> </mo> <mi>cm</mi> </mrow> </semantics></math>. The green-framed box in (<b>b</b>) shows the high-quality MFM-maps, taken at <math display="inline"><semantics> <mrow> <mn>7</mn> <mo> </mo> <mi mathvariant="sans-serif">µ</mi> <mi mathvariant="normal">m</mi> <mo>/</mo> <mi mathvariant="normal">s</mi> </mrow> </semantics></math> while the scan speed was doubled for long-time measurements, which, together with a slightly increased lift-height, explains the higher noise in (<b>b</b>).</p>
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<p>Aging tests for Co<sub>3</sub>Fe α-pillars. (<b>a</b>) shows an MFM-phase map of CoPt sample after fabrication, while (<b>b</b>) shows the same nano-probe on the same sample and the same AFM instrument with very similar operation parameters after a 45-weeks storage in ambient conditions. As can be seen, there is practically no loss of signal strength (compare insets, average phase shifts), image quality, or noise, which proves the chemical long-time stability of such 3D nano-probes.</p>
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