[go: up one dir, main page]
More Web Proxy on the site http://driver.im/
You seem to have javascript disabled. Please note that many of the page functionalities won't work as expected without javascript enabled.
 
 
Sign in to use this feature.

Years

Between: -

Subjects

remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline

Journals

Article Types

Countries / Regions

Search Results (10)

Search Parameters:
Keywords = circular membrane MEMS devices

Order results
Result details
Results per page
Select all
Export citation of selected articles as:
3 pages, 1156 KiB  
Abstract
Electrostatic Microelectromechanical System Speaker Array with Out-of-Plane Piston Displacement and Simplified Microfabrication
by Diogo E. Aguiam, Inês S. Garcia, Edoardo Sotgiu and Filipe S. Alves
Proceedings 2024, 97(1), 101; https://doi.org/10.3390/proceedings2024097101 - 27 Mar 2024
Viewed by 766
Abstract
This study presents a new design for a MEMS electrostatic speaker array with out-of-plane piston-like diaphragm displacement using a simplified silicon-on-insulator microfabrication process. The device comprises an array of parallel actuating membranes with small circular mechanically open but acoustically sealed apertures that enable [...] Read more.
This study presents a new design for a MEMS electrostatic speaker array with out-of-plane piston-like diaphragm displacement using a simplified silicon-on-insulator microfabrication process. The device comprises an array of parallel actuating membranes with small circular mechanically open but acoustically sealed apertures that enable controlled etching of the buried oxide to be released directly from the front side, but retain a high acoustic impedance acting as a flat membrane. This approach simplifies the microfabrication process, requiring only two lithography masks and increasing process tolerances. Preliminary experimental measurements validate the concept and demonstrate the electromechanical and acoustic performance compared with theoretical models. Full article
(This article belongs to the Proceedings of XXXV EUROSENSORS Conference)
Show Figures

Figure 1

Figure 1
<p>(<b>a</b>) Schematic of the microspeaker array and single diaphragm element. (<b>b</b>) COMSOL simulation of vibration modes for a single membrane showing a piston-like fundamental mode.</p>
Full article ">Figure 2
<p>(<b>a</b>) SEM image of one microspeaker membrane and etch openings. (<b>b</b>) Piston-like RMS deflection measurement. Membrane deflection for a sinusoidal actuation (<b>c</b>,<b>d</b>) and compensated (<b>e</b>,<b>f</b>) voltage signal. Frequency response of the (<b>g</b>) membrane deflection and (<b>h</b>) SPL of the microspeaker.</p>
Full article ">
17 pages, 8462 KiB  
Article
Miniature Deformable MEMS Mirrors for Ultrafast Optical Focusing
by Afshin Kashani Ilkhechi, Matthew Martell and Roger Zemp
Micromachines 2023, 14(1), 40; https://doi.org/10.3390/mi14010040 - 24 Dec 2022
Cited by 1 | Viewed by 2234
Abstract
Here, we introduce ultrafast tunable MEMS mirrors consisting of a miniature circular mirrored membrane, which can be electrostatically actuated to change the mirror curvature at unprecedented speeds. The central deflection zone is a close approximation to a parabolic mirror. The device is fabricated [...] Read more.
Here, we introduce ultrafast tunable MEMS mirrors consisting of a miniature circular mirrored membrane, which can be electrostatically actuated to change the mirror curvature at unprecedented speeds. The central deflection zone is a close approximation to a parabolic mirror. The device is fabricated with a minimal membrane diameter, but at least double the size of a focused optical spot. The theory and simulations are used to predict maximum relative focal shifts as a function of membrane size and deflection, beam waist, and incident focal position. These devices are demonstrated to enable fast tuning of the focal wavefront of laser beams at ≈MHz tuning rates, two to three orders of magnitude faster than current optical focusing technologies. The fabricated devices have a silicon membrane with a 30–100 μm radius and a 350 nm gap spacing between the top and bottom electrodes. These devices can change the focal position of a tightly focused beam by ≈1 mm at rates up to 4.9 MHz and with response times smaller than 5 μs. Full article
(This article belongs to the Special Issue Optics and Photonics in Micromachines)
Show Figures

Figure 1

Figure 1
<p>Illustration showing the principle of fast optical focusing with a capacitive micromachined optical focusing (CMOF) deformable MEMS mirror: (<b>a</b>) non-deflected CMOF mirror; (<b>b</b>) deflected CMOF mirror. (<b>c</b>) Illustration of the unfolded geometry of the optical setup. The black dashed line represents the imaginary replacement of a CMOF mirror with a lens. The red solid line represents incident light, and the red dashed line represents the virtual incident light. The blue lines represent refocused light.</p>
Full article ">Figure 2
<p>Simulations when the laser is focused onto the CMOF membrane and the Gaussian beam waist is 0.4 of the membrane radius. (<b>a</b>) Optical power of a CMOF for various membrane sizes and deflection; (<b>b</b>) focal length shift of a laser beam after refocusing with a CMOF for various membrane sizes and deflections; (<b>c</b>) focal spot size change of a laser beam after refocusing with a relay lens with a 3 mm focal length; (<b>d</b>) focal spot shift of a laser beam after a 3 mm focal length relay lens as normalized by the minimum Rayleigh range of the refocused beam after the relay. In (<b>c</b>,<b>d</b>), the relay lens is positioned 3.2 mm away from the CMOF membrane.</p>
Full article ">Figure 3
<p>Plot of <math display="inline"><semantics> <mfrac> <mrow> <mo>Δ</mo> <msup> <mi>s</mi> <mo>′</mo> </msup> </mrow> <msub> <mi>z</mi> <mi>R</mi> </msub> </mfrac> </semantics></math> as a function of <math display="inline"><semantics> <mrow> <mi>s</mi> <mo>/</mo> <mi>f</mi> </mrow> </semantics></math> for three different <math display="inline"><semantics> <mrow> <msub> <mi>z</mi> <mi>R</mi> </msub> <mo>/</mo> <mi>f</mi> </mrow> </semantics></math> values. Larger relative focal shifts are achieved when the focal length is larger than the Rayleigh range of the incident beam.</p>
Full article ">Figure 4
<p>Outline of incident and reflected beam parameters for refocusing of a Gaussian beam by a CMOF membrane. Beam waist simulations for a 30 μm membrane, a 532 nm beam, and a maximum membrane deflection of 150 nm. The plot shows incident and reflected beams, the mirror surface, and the position of the refocusing.</p>
Full article ">Figure 5
<p>Simulation results for 30 μm membranes and 150 nm deflection using a 532 nm wavelength.</p>
Full article ">Figure 6
<p>Relative focal shift simulation results for 30 μm membranes and maximum deflections of (<b>a</b>) 50 nm (<b>b</b>) 100 nm, and (<b>c</b>) 200 nm. The colormaps represent focal shifts normalized by the Rayleigh range of the incident beam.</p>
Full article ">Figure 7
<p>Relative focal shift simulation results for 300 μm membranes and deflections of (<b>a</b>) 100 nm (<b>b</b>) 1 μm, and (<b>c</b>) 10 μm. The colormaps represent focal shifts normalized by the Rayleigh range of the incident beam.</p>
Full article ">Figure 8
<p>Fabrication process flow: (<b>a</b>) dry thermal oxidation to grow 340 nm oxide; (<b>b</b>) etching the gap spacing with BOE; (<b>c</b>) bonded SOI wafer on the prime wafer, the backside of the prime wafer being protected with PECVD oxide; (<b>d</b>) the handle and BOX layers of the silicon wafer are selectively etched, and the device layer is exposed; (<b>e</b>) the membrane of the deformable mirror is formed by selectively etching the silicon layer; (<b>f</b>) the bottom pad is exposed by selectively etching the oxide layer; (<b>g</b>) the metal coating is deposited and etched to form the reflective coating and the electrical pads.</p>
Full article ">Figure 9
<p>Fabricated CMOF-MEMS deformable mirrors. (<b>a</b>) A full wafer view of the fabricated dies; (<b>b</b>) helium ion microscopy image of a CMOF-MEMS cell with a 20 μm radius; (<b>c</b>) AFM surface profile of a CMOF-MEMS mirror at the centre of the mirror; (<b>d</b>) 3D reconstructed image taken by the ZYGO optical profilometer of a CMOF cell with a 30 μm radius and a 100 nm central deflection.</p>
Full article ">Figure 10
<p>Static tests. (<b>a</b>) Deflection versus voltage changes measured by an optical profilometer. (<b>b</b>) Capacitive versus voltage changes measured with a semiconductor characterization system. Both graphs are normalized to the pull-in voltage of the CMOF mirror, which is 29.6 V.</p>
Full article ">Figure 11
<p>Sample laser Doppler vibrometry measurements. (<b>a</b>) The 2D scan showing the membrane displacement for a given frequency. (<b>b</b>) Single-point measurement using an 8 V AC signal. The peak shows the first fundamental frequency of the membrane. (<b>c</b>) Single-point time domain measurement of the membrane displacement for a step function input with a 22 V amplitude.</p>
Full article ">Figure 12
<p>A 3D drawing of the optical setup for testing the CMOFs. The camera-taken picture of the focused laser on a CMOF shows a 16 μm laser spot on a 30 μm-radius CMOF.</p>
Full article ">Figure 13
<p>(<b>a</b>) Measurements in the beam spot size as a function of bias voltage <math display="inline"><semantics> <msub> <mi>V</mi> <mi>b</mi> </msub> </semantics></math> normalized by pull-in voltage <math display="inline"><semantics> <msub> <mi>V</mi> <mi>c</mi> </msub> </semantics></math>. (<b>b</b>) (Inset) Beam intensity profile with the SWF sensor for membrane at 0.7 of the pull-in voltage, associated with a 100 nm deflection. The pixelation of the figure is due to the lens array of the SWF sensor. (<b>c</b>) Measured focal point shifts and normalized focal point shifts relative to the Rayleigh range of the refocused beam as a function of the normalized bias voltage.</p>
Full article ">
11 pages, 2525 KiB  
Article
An Analytical Energy Harvester Model for Interdigitated Ring Electrode on Circular Elastic Membrane
by Hua-Ju Shih and Kuo-Ching Chen
Micromachines 2022, 13(1), 133; https://doi.org/10.3390/mi13010133 - 15 Jan 2022
Viewed by 1956
Abstract
Energy harvesters are devices that accumulate ambient vibrational energy from the environment, and for the time being, variable capacitance is the most widely used mechanism. Various designs were proposed to increase the power of such devices, and in particular, the interdigitated electrode (IDE) [...] Read more.
Energy harvesters are devices that accumulate ambient vibrational energy from the environment, and for the time being, variable capacitance is the most widely used mechanism. Various designs were proposed to increase the power of such devices, and in particular, the interdigitated electrode (IDE) pattern is the mainstream. Nevertheless, most IDE designs focus merely on the parallel-type vibrations of electrodes. In this study, the performance of a novel harvester, which combined circular membrane and interdigitated ring electrodes (IRE), was investigated. This design allows the device to collect energy from the rotational structure motions of electrodes through the vibrating membrane. Besides, the circular structure provides a dense capacitive arrangement that is higher than that of the arrangement obtained using regular rectangular chips. The IRE diagram is composed of many capacitive rings, each of which harvests vibrated energy simultaneously. Three gaps (1, 10, and 100 μm) of the ring are investigated for the first four vibrational modes of the membrane to understand the effect of energy output. It is found that the energy outputs are approximately the same for the three gaps; however, rings with a wider gap are easier to manufacture in MEMS. Full article
Show Figures

Figure 1

Figure 1
<p>Top and section views of the circular membrane.</p>
Full article ">Figure 2
<p>Schematic of the circular membrane energy harvester: (<b>a</b>) nomenclature of the circular membrane of variable capacitance C(<span class="html-italic">t</span>) and the equivalent circuit diagram; (<b>b</b>) mechanism of the circular membrane energy harvester.</p>
Full article ">Figure 3
<p>Conformal mapping transformation process for two electrodes per unit longitudinal length. First, the cross-section of the inclined-plate capacitor of the ring on the membrane (<span class="html-italic">z<sub>p</sub></span>-plane) is mapped onto the upper half plane (<span class="html-italic">t<sub>p</sub></span>-plane). Second, the <span class="html-italic">t<sub>p</sub></span>-plane is mapped onto the <span class="html-italic">ξ<sub>p</sub></span>-plane through fractional linear transformation. Third, the <span class="html-italic">ξ<sub>p</sub></span>-plane is mapped onto the <span class="html-italic">ζ<sub>p</sub></span> -plane through the Schwarz-Crystoffel transformation.</p>
Full article ">Figure 4
<p>Capacitance on the circular membrane before and after vibration.</p>
Full article ">Figure 5
<p>Capacitance per unit length versus normalized displacement for the rotating and non-rotating electrodes.</p>
Full article ">Figure 6
<p>The membranous deformation <span class="html-italic">u<sub>m</sub></span> (blue), the <span class="html-italic">n</span>-th angle <span class="html-italic">φ<sub>n</sub></span> (pink) and capacitance (green) per unit longitudinal length <span class="html-italic">C<sub>n</sub></span> (<span class="html-italic">C<sub>in</sub></span> + <span class="html-italic">C<sub>out</sub></span>) along the radius of the membrane in various modes: (<b>a</b>) 1st mode, (<b>b</b>) 2nd mode, (<b>c</b>) 3rd mode, and (<b>d</b>) 4th mode. <span class="html-italic">C<sub>s</sub></span> = 118.233 pF/m means the capacitance before vibration. (<b>e</b>) The plot of (<span class="html-italic">C<sub>n</sub></span> − <span class="html-italic">C<sub>s</sub></span>) vs. angle of electrode.</p>
Full article ">Figure 7
<p>(<b>a</b>) The capacitance per unit longitudinal length <span class="html-italic">C<sub>n</sub></span> (<span class="html-italic">C<sub>in</sub></span> + <span class="html-italic">C<sub>out</sub></span>) and (<b>b</b>) the capacitive variation in the electrical rings (<span class="html-italic">C<sub>d</sub></span><sub>,<span class="html-italic">n</span></sub>) along radius of membrane for the 1st mode at the gaps <span class="html-italic">s</span> = 100, 10, and 1 μm.</p>
Full article ">Figure 8
<p>(<b>a</b>) The capacitive variation in the rings of <span class="html-italic">s</span> = 100 μm along the radius of the membrane (<span class="html-italic">C<sub>d</sub></span><sub>,<span class="html-italic">n</span></sub>) and (<b>b</b>) energy output per cycle for the rings of <span class="html-italic">s</span> = 100, 10, and 1 μm when <span class="html-italic">V<sub>bias</sub></span> = 300 V for energy harvesters in the 1st–4th modes.</p>
Full article ">
27 pages, 619 KiB  
Article
A Semi-Linear Elliptic Model for a Circular Membrane MEMS Device Considering the Effect of the Fringing Field
by Mario Versaci, Alessandra Jannelli, Francesco Carlo Morabito and Giovanni Angiulli
Sensors 2021, 21(15), 5237; https://doi.org/10.3390/s21155237 - 2 Aug 2021
Cited by 19 | Viewed by 4350
Abstract
In this study, an accurate analytic semi-linear elliptic differential model for a circular membrane MEMS device, which considers the effect of the fringing field on the membrane curvature recovering, is presented. A novel algebraic condition, related to the membrane electromechanical properties, able to [...] Read more.
In this study, an accurate analytic semi-linear elliptic differential model for a circular membrane MEMS device, which considers the effect of the fringing field on the membrane curvature recovering, is presented. A novel algebraic condition, related to the membrane electromechanical properties, able to govern the uniqueness of the solution, is also demonstrated. Numerical results for the membrane profile, obtained by using the Shooting techniques, the Keller–Box scheme, and the III/IV Stage Lobatto IIIa formulas, have been carried out, and their performances have been compared. The convergence conditions, and the possible presence of ghost solutions, have been evaluated and discussed. Finally, a practical criterion for choosing the membrane material as a function of the MEMS specific application is presented. Full article
(This article belongs to the Section Physical Sensors)
Show Figures

Figure 1

Figure 1
<p>A 2<span class="html-italic">D</span> electrostatic circular membrane MEMS device whose metal plates (upper and support ones) are displayed in gray. Between them, a circular membrane, clumped to the edges of the support plate, deforms towards the upper plate without touching it to avoid unwanted electric discharges.</p>
Full article ">Figure 2
<p>A graphical representation of (<a href="#FD8-sensors-21-05237" class="html-disp-formula">8</a>) when <math display="inline"><semantics> <mi>δ</mi> </semantics></math> changes; the forbidden area is located below each curve, while the permitted area is highlighted above each curve.</p>
Full article ">Figure 3
<p>Recovering of <math display="inline"><semantics> <mrow> <mi>u</mi> <mo>(</mo> <mi>r</mi> <mo>)</mo> </mrow> </semantics></math> for <math display="inline"><semantics> <mrow> <mi>δ</mi> <mo>=</mo> <mn>0</mn> </mrow> </semantics></math> and <math display="inline"><semantics> <mrow> <mi>θ</mi> <msup> <mi>λ</mi> <mn>2</mn> </msup> </mrow> </semantics></math> as reported in <a href="#sensors-21-05237-t001" class="html-table">Table 1</a> and <a href="#sensors-21-05237-t002" class="html-table">Table 2</a>.</p>
Full article ">Figure 4
<p>Recovering of <math display="inline"><semantics> <mrow> <mi>u</mi> <mo>(</mo> <mi>r</mi> <mo>)</mo> </mrow> </semantics></math> for <math display="inline"><semantics> <mrow> <mi>δ</mi> <mo>=</mo> <mn>0.5</mn> </mrow> </semantics></math> and <math display="inline"><semantics> <mrow> <mi>θ</mi> <msup> <mi>λ</mi> <mn>2</mn> </msup> </mrow> </semantics></math> as reported in <a href="#sensors-21-05237-t001" class="html-table">Table 1</a> and <a href="#sensors-21-05237-t002" class="html-table">Table 2</a>.</p>
Full article ">Figure 5
<p>Recovering of <math display="inline"><semantics> <mrow> <mi>u</mi> <mo>(</mo> <mi>r</mi> <mo>)</mo> </mrow> </semantics></math> for <math display="inline"><semantics> <mrow> <mi>δ</mi> <mo>=</mo> <mn>1</mn> </mrow> </semantics></math> and <math display="inline"><semantics> <mrow> <mi>θ</mi> <msup> <mi>λ</mi> <mn>2</mn> </msup> </mrow> </semantics></math> as reported in <a href="#sensors-21-05237-t001" class="html-table">Table 1</a> and <a href="#sensors-21-05237-t002" class="html-table">Table 2</a>.</p>
Full article ">Figure 6
<p>Recovering of <math display="inline"><semantics> <mrow> <mi>u</mi> <mo>(</mo> <mi>r</mi> <mo>)</mo> </mrow> </semantics></math> for <math display="inline"><semantics> <mrow> <mi>δ</mi> <mo>=</mo> <mn>1.5</mn> </mrow> </semantics></math> and <math display="inline"><semantics> <mrow> <mi>θ</mi> <msup> <mi>λ</mi> <mn>2</mn> </msup> </mrow> </semantics></math> as reported in <a href="#sensors-21-05237-t001" class="html-table">Table 1</a> and <a href="#sensors-21-05237-t002" class="html-table">Table 2</a>.</p>
Full article ">Figure 7
<p>Recovering of <math display="inline"><semantics> <mrow> <mi>u</mi> <mo>(</mo> <mi>r</mi> <mo>)</mo> </mrow> </semantics></math> for <math display="inline"><semantics> <mrow> <mi>δ</mi> <mo>=</mo> <mn>1.99</mn> </mrow> </semantics></math> and <math display="inline"><semantics> <mrow> <mi>θ</mi> <msup> <mi>λ</mi> <mn>2</mn> </msup> </mrow> </semantics></math> as reported in <a href="#sensors-21-05237-t001" class="html-table">Table 1</a> and <a href="#sensors-21-05237-t002" class="html-table">Table 2</a>.</p>
Full article ">
23 pages, 548 KiB  
Article
Electrostatic Circular Membrane MEMS: An Approach to the Optimal Control
by Mario Versaci and Francesco Carlo Morabito
Computation 2021, 9(4), 41; https://doi.org/10.3390/computation9040041 - 25 Mar 2021
Cited by 2 | Viewed by 2794
Abstract
The recovery of the membrane profile of an electrostatic micro-electro-mechanical system (MEMS) is an important issue, because, when an external electrical voltage is applied, the membrane deforms with the risk of touching the upper plate of the device producing an unwanted electrostatic effect. [...] Read more.
The recovery of the membrane profile of an electrostatic micro-electro-mechanical system (MEMS) is an important issue, because, when an external electrical voltage is applied, the membrane deforms with the risk of touching the upper plate of the device producing an unwanted electrostatic effect. Therefore, it is important to know whether the movement admits stable equilibrium configurations especially when the membrane is closed to the upper plate. In this framework, this work analyzes the behavior of a two-dimensional (2D) electrostatic circular membrane MEMS device subjected to an external voltage. Specifically, starting from a well-known 2D non-linear second-order differential model in which the electrostatic field in the device is proportional to the mean curvature of the membrane, the stability of the only possible equilibrium configuration is studied. Furthermore, when considering that the membrane is equipped with mechanical inertia and that it must not touch the upper plate of the device, a useful range of possible values has been obtained for the applied voltage. Finally, the paper concludes with some computations regarding the variation of potential energy, identifying some optimal control conditions. Full article
(This article belongs to the Section Computational Engineering)
Show Figures

Figure 1

Figure 1
<p>Simplified representation of the 2<span class="html-italic">D</span> electrostatic circular membrane MEMS device. The membrane, anchored to the edges of the lower disk (whose potential <math display="inline"><semantics> <mrow> <mi>V</mi> <mo>=</mo> <mn>0</mn> </mrow> </semantics></math>), deforms towards the upper disk (whose potential is <math display="inline"><semantics> <mrow> <mi>V</mi> <mo>≠</mo> <mn>0</mn> </mrow> </semantics></math>) without ever touching it to avoid unwanted electrostatic effects.</p>
Full article ">Figure 2
<p>Localization of stability points on the plane <math display="inline"><semantics> <mrow> <msub> <mi>z</mi> <mn>1</mn> </msub> <msub> <mi>z</mi> <mn>2</mn> </msub> </mrow> </semantics></math> for system (<a href="#FD24-computation-09-00041" class="html-disp-formula">24</a>).</p>
Full article ">Figure 3
<p><math display="inline"><semantics> <mfrac> <msub> <mrow> <mo>(</mo> <msub> <mi>V</mi> <mrow> <mi>m</mi> <mi>i</mi> <mi>n</mi> </mrow> </msub> <mo>)</mo> </mrow> <mrow> <mi>i</mi> <mi>n</mi> <mi>e</mi> <mi>r</mi> <mi>t</mi> <mi>i</mi> <mi>a</mi> </mrow> </msub> <msqrt> <msub> <mrow> <mo>(</mo> <msub> <mi>V</mi> <mrow> <mi>m</mi> <mi>a</mi> <mi>x</mi> </mrow> </msub> <mo>)</mo> </mrow> <mrow> <mi>p</mi> <mi>e</mi> <mi>r</mi> <mi>m</mi> <mi>i</mi> <mi>s</mi> <mi>s</mi> <mi>i</mi> <mi>b</mi> <mi>l</mi> <mi>e</mi> </mrow> </msub> </msqrt> </mfrac> </semantics></math> versus <math display="inline"><semantics> <mroot> <mi>T</mi> <mn>4</mn> </mroot> </semantics></math>. The blue separation line identifies two distinct areas of system behavior.</p>
Full article ">Figure 4
<p>Area of possible values for <math display="inline"><semantics> <mrow> <mi mathvariant="sans-serif">Δ</mi> <mi>W</mi> </mrow> </semantics></math>. As <span class="html-italic">k</span> decreases, this area increases by extending the possible values for <span class="html-italic">T</span>.</p>
Full article ">
26 pages, 501 KiB  
Article
A 2D Membrane MEMS Device Model with Fringing Field: Curvature-Dependent Electrostatic Field and Optimal Control
by Paolo Di Barba, Luisa Fattorusso and Mario Versaci
Mathematics 2021, 9(5), 465; https://doi.org/10.3390/math9050465 - 25 Feb 2021
Cited by 4 | Viewed by 2088
Abstract
An important problem in membrane micro-electric-mechanical-system (MEMS) modeling is the fringing-field phenomenon, of which the main effect consists of force-line deformation of electrostatic field E near the edges of the plates, producing the anomalous deformation of the membrane when external voltage V is [...] Read more.
An important problem in membrane micro-electric-mechanical-system (MEMS) modeling is the fringing-field phenomenon, of which the main effect consists of force-line deformation of electrostatic field E near the edges of the plates, producing the anomalous deformation of the membrane when external voltage V is applied. In the framework of a 2D circular membrane MEMS, representing the fringing-field effect depending on |u|2 with the u profile of the membrane, and since strong E produces strong deformation of the membrane, we consider |E| proportional to the mean curvature of the membrane, obtaining a new nonlinear second-order differential model without explicit singularities. In this paper, the main purpose was the analytical study of this model, obtaining an algebraic condition ensuring the existence of at least one solution for it that depends on both the electromechanical properties of the material constituting the membrane and the positive parameter δ that weighs the terms |u|2. However, even if the the study of the model did not ensure the uniqueness of the solution, it made it possible to achieve the goal of finding a stable equilibrium position. Moreover, a range of admissible values of V were obtained in order, on the one hand, to win the mechanical inertia of the membrane and, on the other hand, to ensure that the membrane did not touch the upper disk of the device. Lastly, some optimal control conditions based on the variation of potential energy are presented and discussed. Full article
(This article belongs to the Special Issue Mathematical Problems in Mechanical Engineering)
Show Figures

Figure 1

Figure 1
<p>Work flowchart.</p>
Full article ">Figure 2
<p><math display="inline"><semantics> <mrow> <msub> <mi>u</mi> <mn>1</mn> </msub> <mrow> <mo>(</mo> <mi>r</mi> <mo>)</mo> </mrow> </mrow> </semantics></math> and <math display="inline"><semantics> <mrow> <msub> <mi>u</mi> <mn>2</mn> </msub> <mrow> <mo>(</mo> <mi>r</mi> <mo>)</mo> </mrow> </mrow> </semantics></math> for model (<a href="#FD2-mathematics-09-00465" class="html-disp-formula">2</a>).</p>
Full article ">
19 pages, 1513 KiB  
Article
Recovering of the Membrane Profile of an Electrostatic Circular MEMS by a Three-Stage Lobatto Procedure: A Convergence Analysis in the Absence of Ghost Solutions
by Mario Versaci, Giovanni Angiulli and Alessandra Jannelli
Mathematics 2020, 8(4), 487; https://doi.org/10.3390/math8040487 - 1 Apr 2020
Cited by 5 | Viewed by 2045
Abstract
In this paper, a stable numerical approach for recovering the membrane profile of a 2D Micro-Electric-Mechanical-Systems (MEMS) is presented. Starting from a well-known 2D nonlinear second-order differential model for electrostatic circular membrane MEMS, where the amplitude of the electrostatic field is considered proportional [...] Read more.
In this paper, a stable numerical approach for recovering the membrane profile of a 2D Micro-Electric-Mechanical-Systems (MEMS) is presented. Starting from a well-known 2D nonlinear second-order differential model for electrostatic circular membrane MEMS, where the amplitude of the electrostatic field is considered proportional to the mean curvature of the membrane, a collocation procedure, based on the three-stage Lobatto formula, is derived. The convergence is studied, thus obtaining the parameters operative ranges determining the areas of applicability of the device under analysis. Full article
(This article belongs to the Special Issue Mathematics and Engineering II)
Show Figures

Figure 1

Figure 1
<p>Representation of an electrostatic circular membrane MEMS device: the membrane is deformed towards the upper disk while the lower disk is at potential <math display="inline"><semantics> <mrow> <mi>V</mi> <mo>=</mo> <mn>0</mn> </mrow> </semantics></math>.</p>
Full article ">Figure 2
<p>Recovering of the membrane by using the bvp4c MatLab<sup>®</sup> solver: <math display="inline"><semantics> <mrow> <mi>θ</mi> <msup> <mi>λ</mi> <mn>2</mn> </msup> <mo>=</mo> <mn>0.5</mn> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <msub> <mi>u</mi> <mn>1</mn> </msub> <mo>≤</mo> <mn>2.446</mn> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <msub> <mi>u</mi> <mn>2</mn> </msub> <mo>=</mo> <mn>0</mn> </mrow> </semantics></math>.</p>
Full article ">Figure 3
<p>Recovering of the membrane by using the bvp4c MatLab<sup>®</sup> solver: <math display="inline"><semantics> <mrow> <mi>θ</mi> <msup> <mi>λ</mi> <mn>2</mn> </msup> <mo>=</mo> <mn>0.5</mn> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <mn>2.447</mn> <mo>≤</mo> <msub> <mi>u</mi> <mn>1</mn> </msub> <mo>≤</mo> <mn>2.453</mn> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <msub> <mi>u</mi> <mn>2</mn> </msub> <mo>=</mo> <mn>0</mn> </mrow> </semantics></math>.</p>
Full article ">Figure 4
<p>Recovering of the membrane by using the bvp4c MatLab<sup>®</sup> solver: <math display="inline"><semantics> <mrow> <mi>θ</mi> <msup> <mi>λ</mi> <mn>2</mn> </msup> <mo>=</mo> <mn>0.5</mn> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <mn>2.454</mn> <mo>≤</mo> <msub> <mi>u</mi> <mn>1</mn> </msub> <mo>≤</mo> <mn>9.474</mn> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <mn>9.63</mn> <mo>≤</mo> <msub> <mi>u</mi> <mn>1</mn> </msub> <mo>≤</mo> <mn>12.7</mn> </mrow> </semantics></math> and <math display="inline"><semantics> <mrow> <mn>15.1</mn> <mo>≤</mo> <msub> <mi>u</mi> <mn>1</mn> </msub> <mo>≤</mo> <mn>19.978</mn> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <msub> <mi>u</mi> <mn>2</mn> </msub> <mo>=</mo> <mn>0</mn> </mrow> </semantics></math>.</p>
Full article ">Figure 5
<p>Recovering of the membrane by using the bvp4c MatLab<sup>®</sup> solver: <math display="inline"><semantics> <mrow> <mi>θ</mi> <msup> <mi>λ</mi> <mn>2</mn> </msup> <mo>=</mo> <mn>0.5</mn> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <mn>9.475</mn> <mo>≤</mo> <msub> <mi>u</mi> <mn>1</mn> </msub> <mo>≤</mo> <mn>9.62</mn> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <mn>12.71</mn> <mo>≤</mo> <msub> <mi>u</mi> <mn>1</mn> </msub> <mo>≤</mo> <mn>15</mn> </mrow> </semantics></math> and <math display="inline"><semantics> <mrow> <msub> <mi>u</mi> <mn>1</mn> </msub> <mo>≥</mo> <mn>19.979</mn> </mrow> </semantics></math>, <math display="inline"><semantics> <mrow> <msub> <mi>u</mi> <mn>2</mn> </msub> <mo>=</mo> <mn>0</mn> </mrow> </semantics></math>.</p>
Full article ">Figure 6
<p>Recovering of the membrane achieved by <math display="inline"><semantics> <mrow> <msub> <mi>u</mi> <mn>1</mn> </msub> <mo>=</mo> <mn>0.1</mn> </mrow> </semantics></math> and <math display="inline"><semantics> <mrow> <mi>θ</mi> <msup> <mi>λ</mi> <mn>2</mn> </msup> <mo>=</mo> <mn>5</mn> <mo>·</mo> <msup> <mn>10</mn> <mrow> <mo>−</mo> <mn>7</mn> </mrow> </msup> </mrow> </semantics></math>: strong instabilities take place next to the edge of the membrane.</p>
Full article ">Figure 7
<p>Recovering of the membrane achieved by <math display="inline"><semantics> <mrow> <msub> <mi>u</mi> <mn>1</mn> </msub> <mo>=</mo> <mn>1.2</mn> </mrow> </semantics></math> and <math display="inline"><semantics> <mrow> <mi>θ</mi> <msup> <mi>λ</mi> <mn>2</mn> </msup> <mo>=</mo> <mn>5</mn> <mo>·</mo> <msup> <mn>10</mn> <mrow> <mo>−</mo> <mn>5</mn> </mrow> </msup> </mrow> </semantics></math>: strong instabilities take place next to the edge of the membrane.</p>
Full article ">
18 pages, 472 KiB  
Article
A 2D Non-Linear Second-Order Differential Model for Electrostatic Circular Membrane MEMS Devices: A Result of Existence and Uniqueness
by Paolo Di Barba, Luisa Fattorusso and Mario Versaci
Mathematics 2019, 7(12), 1193; https://doi.org/10.3390/math7121193 - 5 Dec 2019
Cited by 20 | Viewed by 2937
Abstract
In the framework of 2D circular membrane Micro-Electric-Mechanical-Systems (MEMS), a new non-linear second-order differential model with singularity in the steady-state case is presented in this paper. In particular, starting from the fact that the electric field magnitude is locally proportional to the curvature [...] Read more.
In the framework of 2D circular membrane Micro-Electric-Mechanical-Systems (MEMS), a new non-linear second-order differential model with singularity in the steady-state case is presented in this paper. In particular, starting from the fact that the electric field magnitude is locally proportional to the curvature of the membrane, the problem is formalized in terms of the mean curvature. Then, a result of the existence of at least one solution is achieved. Finally, two different approaches prove that the uniqueness of the solutions is not ensured. Full article
Show Figures

Figure 1

Figure 1
<p>Representation of a circular membrane MEMS actuator when its membrane is deformed.</p>
Full article ">Figure 2
<p>The functions <math display="inline"><semantics> <mrow> <msub> <mi>u</mi> <mn>1</mn> </msub> <mrow> <mo>(</mo> <mi>r</mi> <mo>)</mo> </mrow> </mrow> </semantics></math> and <math display="inline"><semantics> <mrow> <msub> <mi>u</mi> <mn>2</mn> </msub> <mrow> <mo>(</mo> <mi>r</mi> <mo>)</mo> </mrow> </mrow> </semantics></math> for the problem under study.</p>
Full article ">Figure 3
<p>The plane <math display="inline"><semantics> <mrow> <msup> <mi>d</mi> <mo>*</mo> </msup> <mi>θ</mi> <msup> <mi>λ</mi> <mn>2</mn> </msup> </mrow> </semantics></math> and the line of equation <math display="inline"><semantics> <mrow> <mi>θ</mi> <msup> <mi>λ</mi> <mn>2</mn> </msup> <mo>=</mo> <mfrac> <mrow> <msup> <mi>R</mi> <mn>2</mn> </msup> <msup> <mi>d</mi> <mrow> <mo>*</mo> <mn>2</mn> </mrow> </msup> </mrow> <mrow> <mn>2</mn> <msup> <mi>V</mi> <mn>2</mn> </msup> <msub> <mi>ϵ</mi> <mn>0</mn> </msub> <mi>k</mi> </mrow> </mfrac> </mrow> </semantics></math> (black line): the light green area represents the zone of existence of at least one solution for Equation (<a href="#FD5-mathematics-07-01193" class="html-disp-formula">5</a>), and the light red area represents a regime where at least one solution for Equation (<a href="#FD5-mathematics-07-01193" class="html-disp-formula">5</a>) is not guaranteed.</p>
Full article ">
2121 KiB  
Article
Power Generation by Reverse Electrodialysis in a Microfluidic Device with a Nafion Ion-Selective Membrane
by Tsung-Chen Tsai, Chia-Wei Liu and Ruey-Jen Yang
Micromachines 2016, 7(11), 205; https://doi.org/10.3390/mi7110205 - 10 Nov 2016
Cited by 29 | Viewed by 6337
Abstract
An energy conversion microchip consisting of two circular microchambers and a Nafion-filled microchannel is fabricated using standard micro-electro-mechanical systems (MEMS) techniques. When the chambers are filled with KCl solutions with different concentrations, the Nafion microchannel acts as a cation-selective membrane and results in [...] Read more.
An energy conversion microchip consisting of two circular microchambers and a Nafion-filled microchannel is fabricated using standard micro-electro-mechanical systems (MEMS) techniques. When the chambers are filled with KCl solutions with different concentrations, the Nafion microchannel acts as a cation-selective membrane and results in the generation of electrical power through a reverse electrodialysis (RED) process. The current-potential characteristics of the Nafion membrane are investigated for devices with various microchannel lengths and electrolyte concentration ratios. It is shown that for a given voltage, the current and generated power increase with a reducing channel length due to a lower resistance. In addition, a maximum power density of 755 mW/m2 is obtained given an electrolyte concentration ratio of 2000:1 (unit is mM). The optimal device efficiency is found to be 36% given a channel length of 1 mm and a concentration ratio of 1000:1 (mM). Finally, no enhancement of the short circuit current is observed at higher concentration ratios. Full article
(This article belongs to the Special Issue Micro/Nano-Chip Electrokinetics)
Show Figures

Figure 1

Figure 1
<p>Fabrication of the Nafion ion-selective membrane in the microchannel.</p>
Full article ">Figure 2
<p>Basic configuration and photograph of the reverse electrodialysis (RED) device.</p>
Full article ">Figure 3
<p>(<b>a</b>) Schematic illustration of the RED process in the cation-selective channel; and (<b>b</b>) the equivalent electrical circuit of the experimental setup.</p>
Full article ">Figure 4
<p>Current-potential curves for RED devices with different microchannel lengths and concentration ratios of: (<b>a</b>) 10:1; (<b>b</b>) 100:1; and (<b>c</b>) 1000:1 (unit is mM).</p>
Full article ">Figure 5
<p>Variation of diffusion potential with concentration ratio given microchannel length of 1 mm.</p>
Full article ">Figure 6
<p>Variation of transference number with the concentration ratio given a microchannel length of 1 mm.</p>
Full article ">Figure 7
<p>Variation of the maximum power density with concentration ratio given a microchannel length of 1 mm.</p>
Full article ">Figure 8
<p>Variation of the energy conversion efficiency with the concentration ratio given a microchannel length of 1 mm.</p>
Full article ">Figure 9
<p>Current-potential curves for the different concentration ratios in RED devices with microchannels of lengths of: (<b>a</b>) 3 mm; (<b>b</b>) 2 mm; and (<b>c</b>) 1 mm.</p>
Full article ">
536 KiB  
Article
A MEMS-Based Flow Rate and Flow Direction Sensing Platform with Integrated Temperature Compensation Scheme
by Rong-Hua Ma, Dung-An Wang, Tzu-Han Hsueh and Chia-Yen Lee
Sensors 2009, 9(7), 5460-5476; https://doi.org/10.3390/s90705460 - 9 Jul 2009
Cited by 39 | Viewed by 15233
Abstract
This study develops a MEMS-based low-cost sensing platform for sensing gas flow rate and flow direction comprising four silicon nitride cantilever beams arranged in a cross-form configuration, a circular hot-wire flow meter suspended on a silicon nitride membrane, and an integrated resistive temperature [...] Read more.
This study develops a MEMS-based low-cost sensing platform for sensing gas flow rate and flow direction comprising four silicon nitride cantilever beams arranged in a cross-form configuration, a circular hot-wire flow meter suspended on a silicon nitride membrane, and an integrated resistive temperature detector (RTD). In the proposed device, the flow rate is inversely derived from the change in the resistance signal of the flow meter when exposed to the sensed air stream. To compensate for the effects of the ambient temperature on the accuracy of the flow rate measurements, the output signal from the flow meter is compensated using the resistance signal generated by the RTD. As air travels over the surface of the cross-form cantilever structure, the upstream cantilevers are deflected in the downward direction, while the downstream cantilevers are deflected in the upward direction. The deflection of the cantilever beams causes a corresponding change in the resistive signals of the piezoresistors patterned on their upper surfaces. The amount by which each beam deflects depends on both the flow rate and the orientation of the beam relative to the direction of the gas flow. Thus, following an appropriate compensation by the temperature-corrected flow rate, the gas flow direction can be determined through a suitable manipulation of the output signals of the four piezoresistors. The experimental results have confirmed that the resulting variation in the output signals of the integrated sensors can be used to determine not only the ambient temperature and the velocity of the air flow, but also its direction relative to the sensor with an accuracy of ± 7.5o error. Full article
(This article belongs to the Special Issue Sensor Configuration and Smart Sensors)
Show Figures


<p>(a) Schematic illustration of micro-cantilever type flow sensor; (b) experimental (black lines) and theoretical (colored lines) results for flow rate sensitivity of sensors with different cantilever tip widths [<a href="#b20-sensors-09-05460" class="html-bibr">20</a>].</p>
Full article ">
<p>Schematic illustration showing deflection of microcantilevers as air flows over their surfaces. (a) Gas flow direction sensor comprising four microcantilevers arranged in cross-form configuration; (b) deflection of microcantilevers as air flows over the sensor surface.</p>
Full article ">
<p>Schematic illustration of circular thermal flow meter.</p>
Full article ">
<p>Schematic overview of fabrication process used to accomplish flow direction sensor with integrated flow meter and RTD.</p>
Full article ">
<p>SEM image of flow direction sensor comprising four microcantilevers in a cross-form configuration.</p>
Full article ">
<p>Photograph of circular thermal flow meter and RTD used for temperature compensation purposes (upper: flow meter, lower: RTD).</p>
Full article ">
<p>(a) Position of initial air flow direction relative to sensor; (b) correlation between resistance signal variations and air flow direction for air flow velocities in the range of 15∼30 ms<sup>−1</sup>.</p>
Full article ">
<p>Variations of micro-heater temperature with magnitude of supplied electrical voltage for flow meters on diaphragm and bulk structure, respectively.</p>
Full article ">
<p>Variations of measured resistance change with flow rate for flow meters on diaphragm and bulk structure, respectively, at 100 °C where the initial resistance is 580.6 Ω.</p>
Full article ">
Back to TopTop