Efficient Integration of Ultra-low Power Techniques and Energy Harvesting in Self-Sufficient Devices: A Comprehensive Overview of Current Progress and Future Directions
<p>A typical WSN architecture.</p> "> Figure 2
<p>Generic IoT–wireless sensor node block diagram combined with energy harvesting.</p> "> Figure 3
<p>Typical architecture of an energy harvesting wireless sensor network (EHWSN). (<b>a</b>) EH without storage. (<b>b</b>) EH with storage.</p> "> Figure 4
<p>Different operational modes (sleep, wake-up and active mode) for a generic sensor node.</p> "> Figure 5
<p>Dynamic power consumption for an inverter CMOS during the charging and discharging C. The green arrow indicates the charging process through the PMOS transistor. The red arrow indicates the discharge process through the NMOS transistor.</p> "> Figure 6
<p>Short-circuit current path in an inverter CMOS during transients.</p> "> Figure 7
<p>Leakage power components in an inverter CMOS (for <math display="inline"><semantics> <mrow> <msub> <mrow> <mi>V</mi> </mrow> <mrow> <mi>G</mi> <mi>S</mi> </mrow> </msub> <mo>=</mo> <mn>0</mn> <mo> </mo> <mi>V</mi> </mrow> </semantics></math>).</p> "> Figure 8
<p>Power consumption vs. range for common communication protocols.</p> "> Figure 9
<p>Generic wireless sensor node combined with EH.</p> "> Figure 10
<p>Electric circuit of a commercial ultra-low power management unit (ULPMU).</p> "> Figure 11
<p>The Ragone plots for various energy storage devices. Reprinted with permission from ref. [<a href="#B68-sensors-24-04471" class="html-bibr">68</a>].</p> "> Figure 12
<p>Some current commercial batteries are selected considering parameters such as specific energy density and volumetric energy density. Reprinted with permission from ref. [<a href="#B69-sensors-24-04471" class="html-bibr">69</a>].</p> "> Figure 13
<p>Basic structure and working principle of capacitor.</p> "> Figure 14
<p>Tree of supercapacitor types.</p> "> Figure 15
<p>Schematic structure of supercapacitor types; (<b>a</b>) EDLC; (<b>b</b>) PC; (<b>c</b>) hybrid.</p> "> Figure 16
<p>The schematic representation of metal–air batteries (<b>a</b>,<b>b</b>). Reprinted with permission from ref. [<a href="#B74-sensors-24-04471" class="html-bibr">74</a>].</p> "> Figure 17
<p>TFB basic construction.</p> "> Figure 18
<p>Basic process of charging/discharging battery schematic.</p> "> Figure 19
<p>Principles of operation of a solar cell constituted by a single P–N junction.</p> "> Figure 20
<p>Bandgap structure of a P–N junction and the absorption process of photons.</p> "> Figure 21
<p>The proposed ULPD-WSN system diagram. Reprinted with permission from ref. [<a href="#B117-sensors-24-04471" class="html-bibr">117</a>].</p> "> Figure 22
<p>Solar cells integrated into outdoor lighting (<b>a</b>) and security cameras (<b>b</b>).</p> "> Figure 23
<p>Overview of different generations of solar cells: 1st generation, 2nd generation (commercial thin films), and 3rd generation (emerging thin films). Reprinted with permission from ref. [<a href="#B144-sensors-24-04471" class="html-bibr">144</a>].</p> "> Figure 24
<p>Schematic blocks of a radiofrequency energy harvesting system. It includes an antenna, a matching circuit, a rectifier, a voltage multiplier, a power management unit, an energy storage unit, and a load.</p> "> Figure 25
<p>Near-field and far-field regions for an antenna.</p> "> Figure 26
<p>Image showing the setups for powering the sensor node using an RF generator (<b>left</b>) and a monopole antenna (<b>right</b>) for the RF harvester input. Reprinted with permission from ref. [<a href="#B173-sensors-24-04471" class="html-bibr">173</a>].</p> "> Figure 27
<p>Image showing the setups for powering a load using a rectenna array designed at 2.45 GHz (<b>left</b>) and a fabricated rectenna array (<b>right</b>). Reprinted with permission from ref. [<a href="#B174-sensors-24-04471" class="html-bibr">174</a>].</p> "> Figure 28
<p>Module for smart environmental sensing (RAMSES) for agriculture IoT sensor. Reprinted with permission from ref. [<a href="#B175-sensors-24-04471" class="html-bibr">175</a>].</p> "> Figure 29
<p>A basic architecture of a typical THz rectenna.</p> "> Figure 30
<p>The fabrication process of nanoantennas and the rectenna device. Panel (<b>a</b>) highlights a SEM image of the nanoantenna array created using EBL. Panel (<b>b</b>) outlines the overlap fabrication steps: (i) creation of the first antenna arm, (ii) exposure of the second arm using electronic beam layer (EBL), (iii) removal of exposed resist with methyl isobutyl ketone (MIBK) and Isopropyl alcohol (IPA) developer mixture (ratio 1:5:3), (iv) deposition of 0.7 nm of oxide through atomic layer deposition (ALD), (v) sputtering of the second arm, (vi) completion of device after liftoff process with acetone. Panel (<b>c</b>) displays a SEM image of the fabricated overlap, while panel (<b>d</b>) presents a SEM image of the antenna-integrated diode. Reprinted with permission from ref. [<a href="#B219-sensors-24-04471" class="html-bibr">219</a>,<a href="#B220-sensors-24-04471" class="html-bibr">220</a>].</p> "> Figure 31
<p>(<b>a</b>) MI<sup>2</sup>M fabricated on a silica substrate Si, where the metal pads, Pt and Ti, are overlapped for an area of 900 μm<sup>2</sup>, and (<b>b</b>) cross-sectional view of the diode part, obtained by TEM. Reprinted with permission from ref. [<a href="#B199-sensors-24-04471" class="html-bibr">199</a>].</p> "> Figure 32
<p>(<b>a</b>) Relevant dimensions of an inverse-arrowhead diode; and (<b>b</b>) a Z-diode. Reprinted with permission from ref. [<a href="#B233-sensors-24-04471" class="html-bibr">233</a>].</p> ">
Abstract
:1. Introduction
- (a)
- If power consumption is lower than harvested power, EH can completely replace battery power. In this case, the sensor node may operate continuously and EH completely replaces the use of battery power, as illustrated in Figure 3a.
- (b)
Organization of This Review
2. Investigation and Implementation of Ultra-Low-Power Design Technique (ULPDT) Applied for EHWSN
2.1. Operation States and Consumption Levels of a Typical Sensor Node
2.2. Identifying Sources of Power Dissipation in Circuits
Dynamic Power Reduction Approach
2.3. Static Power Reduction Techniques
2.4. Software and System-Level Optimizations
2.5. Logic and Architecture-Level Optimizations
3. Exploring Efficient Wireless Protocols for Low Power Connectivity: A Comparative Analysis
3.1. Energy Saving Protocol (ESP) for EHWSN
3.1.1. Bluetooth
3.1.2. Ultra-Wideband (UWB)
3.1.3. Wi-Fi (Wireless Fidelity)
3.1.4. ZigBee
3.1.5. Z-Wave
3.1.6. IPv6 over Low-Power Wireless Personal Area Networks (6LoWPAN)
3.1.7. LoRaWAN (Long-Range Low-Power Wide Area Network)
3.1.8. SigFox
3.1.9. Narrowband Internet of Things (NB-IoT)
3.1.10. 2G, 3G, 4G LTE, and 5G Networks
3.1.11. Satellite Communication and Integration of Low Earth Orbit (LEO) Satellite with 5G
4. Optimizing Energy Efficiency: Key Concepts for Power Management Unit
4.1. Mechanisms Proposed for Managing the Dynamics of EH: Energy-Neutral, Power-Neutral, and Intermittent Computing
4.2. Maximizing Energy Efficiency: General Concept for PMU
5. Maximizing Sustainability and Reliability with Efficient Energy Storage Solutions
5.1. Battery Options: Non-Rechargeable vs. Rechargeable
5.2. Maximizing Efficiency: The Role of Capacitors and Supercapacitors in Energy Storage
5.2.1. Capacitors
5.2.2. Supercapacitors
5.3. New Trends in Energy Storage
5.3.1. Metal–Air Batteries (MABs)
5.3.2. Thin Film Batteries (TFBs)
6. Enhancing WSN Performance through Energy Harvesting Techniques (EHT)
6.1. Radiant Energy
6.1.1. Solar Cell EH-WSN
6.1.2. Evolution of SCs: From First to Third Generation
6.1.3. Challenges and Future Directions for Emerging SCs Technologies
6.2. Radio Frequency (RF)-EHWSN
Challenges and Future Directions for Emerging RF-EHWSN Technologies
6.3. Infrared-Frequency Rectifying Antenna
Material | Cut-Off Frequency | Thickness | JON | Asym | NL | S (V−1) | Zero Bias S (V−1) |
---|---|---|---|---|---|---|---|
Cu (100 nm)-CuO-Au (100 nm) (0.0045 μm2) [199] | 28.3 THz | CuO (0.7 nm) Au/Cu (100 nm) | - | - | - | 6 | 4 |
Ti-TiO2-Al (21,287 µm2) [205,206,207,208] | Up to 150 THz | TiO2 (9 nm) | 10−1 A/cm2 | - | 6.5 | 18 | - |
Ti-TiO2-Pt (21,287 µm2) [205,206,207,208] | Up to 150 THz | TiO2 (9 nm) | 10−0 A/cm2 | - | 15 | 15 | - |
Nb/Nb2O5/Pt [205,206] | Up to 150 THz | Nb2O5 (15 nm) | - | 1500 | 4 | 20 | - |
Nb/Nb2O5/Cu [205,206]] | Up to 150 THz | Nb2O5 (15 nm) | - | 1500 | 8 | 20 | - |
Nb/Nb2O5/Ag [205,206] | Up to 150 THz | Nb2O5 (15 nm) | - | 1500 | 8 | 20 | - |
Nb/Nb2O5/Au [205,206] | Up to 150 THz | Nb2O5 (15 nm) | - | 1500 | 8 | 20 | - |
Au/Al2O3/Pt [205,206,207,208,209,210] | Up to 28.3 THz | Al2O3 (1.4 nm) Au/Pt (100 nm) | - | - | 6 | - | 10 |
Ni-NiO-Ag (3.1 × 10−4 µm2) [211] | Up to 343 THz | NiO (6 nm) | - | 5 | 3 | 8.5 | 5.8 |
Pt-SiCl3-(CH2)17-CH3 -Ti (100 μm2) [212] | Up to 150 THz | SiCl3-(CH2)17-CH3 (2.23 nm) | - | 117.8 | 6.8 | 20.8 | 8.0 |
Nb/TiO2/Pt [213] | Up to 30 THz | TiO2 (13 nm) | - | 80 | 3.5 | - | - |
Nb/Nb2O5/Ni [213] | Up to 150 THz | Nb2O5 (15 nm) Nb/Ni (90–100 nm) | 1 × 10−10 A/cm2 | 396.5 | 7.1 | 8.5 | - |
Nb/Nb2O5 (15 nm)/Au [214] | Up to 150 THz | Nb2O5 (15 nm) Nb/Au (90–100 nm) | - | 1430.8 | 8.0 | 7.0 | - |
SrTiO3 (STO)/Al2O3/SrTiO3 (STO) [215] | Up to RF | - | 5 × 10−9 A/cm2 | - | - | - | - |
Cu-CuO-Cu (2 × 2 μm2) [216] | Up to 150 THz | CuO (2 nm) Cu (100 nm) | - | - | - | 4.497 | - |
Pt/Al2O3/Al [217] | Up to 150 THz | Al2O3 (6 nm) Pt/Al (100 nm) | - | 110 for AP-CVD 30 for PEALD | 6 for AP-CVD 30 for PEALD | 9 for AP-CVD 22 for PEALD | - |
Al-Al2O3-Au [218] | Up to 60 THz | Al/Au (65 nm) | 4.0 μA/cm2 | - | - | 14.46 | - |
Al-Al2O3-Cr [219] | Up to 28.3 THz | Al2O3 (3 nm) Al/Cr (100 nm) | 2 × 10−4 A/cm2 | - | 3.1 | - | - |
Material | Cut-Off Frequency | JON | Asym | NL | S (V−1) | Zero Bias S (V−1) | Resistance |
---|---|---|---|---|---|---|---|
W/Nb2O5 (3 nm)/Ta2O5 (1 nm)/W [221] W/Nb2O5 (1 nm)/Ta2O5 (1 nm)/W [221] | Up to 150 THz | - - | - - | - - | 11 11 | - - | - - |
Cr (60 nm)/TiO2 (1.5 nm)/Al2O3 (1.5 nm)/Ti (60 nm) [222] Cr (60 nm)/TiO2 (0.75 nm)/Al2O3 (0.75 nm)/TiO2 (0.75 nm)/Al2O3 (0.75 nm)/Ti (60 nm) [222] | Up to 150 THz | - - | - - | 6 7 | 3 90 | - - | - - |
Al (60 nm)/Ta2O5 (3–6 nm)/Al2O3 (1 nm)/Al (60 nm) [223] Al (60 nm)/Nb2O5 (3–6 nm)/Al2O3 (1 nm)/Al (60 nm) [223] | Up to 150 THz | 102A/m2 | 18 | 7.5 | 9 | - | - |
Co/Co3O4 (1.1 nm)/TiO2 (1.05 nm)/Ti [224] | Up to 30 THz | 105 A/cm2 | - | - | 4.4 | 2.2 | 18 KΩ |
Ti/TiO2 (1 nm)/ZnO (0.5 nm)/Al [225] | Up to 17.4 THz | - | - | - | 5.1 | 1.6 | 312 Ω |
Cr/Cr2O3 (2 nm)/HfO2 (2 nm)/Al2O3 (2 nm)/Cr [224,225,226] Cr/Cr2O3 (2 nm)/Al2O3 (2 nm)/HfO2 (2 nm)/Cr [226] | Up to 30 THz | - - | 5 4 | 4 5 | - - | - - | - - |
Pt (70 nm)/TiO2 (2 nm)/TiO1.4 (0.6 nm)/Ti (50 nm) [219] | Up to 30 THz | 4.2 × 106 A/m2 | 7.3 | - | - | - | - |
Cr (100 nm)/Cr2O3 (3 nm)/Al2O3 (3 nm)/Ag (100 nm) [227] | Up to 30 THz | 3 mA/cm2 | >280 | - | - | - | - |
Cr (100 nm)/Al2O3 (2 nm)/HfO2 (2 nm)/Cr [228] | Up to 30 THz | 70 µA/cm2 | 9 | 10 | 4.8 | - | - |
ZCAN (ZrCuAlNi 150 nm)/HfO2 (5 nm)/Al2O3 (3 nm)/Al (150 nm) [229] | Up to 30 THz | - | >10 | >5 | - | - | - |
Pt (150 nm)/HfO2 (1.5 nm)/TiO2 (1.5 nm)/Ti (150 nm) [230,231] | Up to 30 THz | - | 10 | >5.5 | 2 × 104 | - | 0.1 MΩ |
Pt (150 nm)/Al2O3 (1.5 nm)/TiO2 (1.5 nm)/Ti (150 nm) [230,231] | Up to 30 THz | - | 17 | >5.5 | 2 × 104 | - | 0.1 MΩ |
Ni (150 nm)/NiO (1.5 nm)/ZnO (1.5 nm)/Cr (150 nm) [232] | Up to 30 THz | - | 16 | - | - | - | - |
6.3.1. Challenges and Future Directions in the Field of Antennas
6.3.2. Challenges and Future Directions in the Field of THz Diode
6.3.3. Implementing Machine Learning in Emerging EHT
6.3.4. Hybrid Energy Harvesting
7. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
Abbreviations
ES | Energy Storage |
ULPDT | Ultra-Low-Power Design Techniques |
EHT | Energy Harvesting Technique |
PMU | Power Management Unit |
IoT | Internet of Things |
ULP WCP | Ultra-Low Power Wireless Communication Protocol |
WSN | Wireless Sensor Network |
DC | Direct Current |
DVS | Dynamic Voltage Scaling |
DFS | Dynamic Frequency Scaling |
RBB | Reverse Body Biasing |
DT | Direct Tunneling |
FNT | Fowler–Nordheim Tunneling |
EMI | Electromagnetic Interference |
ESP | Energy Saving Protocol |
ITA NTP | Integrating Terrestrial and Non-Terrestrial Protocols |
QAM | Quadrature amplitude modulation |
UL/DL MIMO | Uplink/Downlink MIMO |
OFDMA | Orthogonal frequency-division multiple access |
BPSK/OQPSK | Binary Phase Shift Keying/Offset Quadrature Phase Shift Keying |
WPANs | Wireless Personal Area Networks |
6LoWPAN | IPv6 over Low-Power Wireless Personal Area Networks |
LoRaWAN | Long Range Low Power Wide Area Network |
CSS | Chirp Spread Spectrum |
NB-IoT | Narrowband Internet of Things |
LPWAN | Low Power Wide Area Network |
GSM | Global System for Mobile Communications |
WCDMA | Wideband Code Division Multiple Access |
TDMA | Time Division Multiple Access |
LTE | Long Term Evolution |
GPIO | General-Purpose Input and Output Device |
DAC | Digital-to-Analog Converter |
MPPC/MPPT | Maximum Power Point Control/Tracking |
MnO2Li | Manganese dioxide lithium |
MnO2 | Manganese Dioxide |
LiSOCl2 | Lithium Thionyl Chloride |
LiO2S | Lithium sulfite |
NiCd | Nickel-Cadmium |
NiMH | Nickel-metal hydride |
Li-Ion | Lithium-ion |
EDLCs | Electric Double-Layer Capacitors |
PCs | Pseudo Capacitors |
HSCs | Hybrid Supercapacitors |
MAB | Metal–air batteries |
Li | Lithium |
Na | Sodium |
K | Potassium |
ƞ | Efficiency |
Voc | Open-Circuit Voltage |
Isc | Short-Circuit Current |
FF | Fill Factor |
Pmax | Maximum Power Point |
Vmpp | Voltage at Maximum Power |
Impp | Current at Maximum Power |
Rsh | Shunt Resistance |
Rs | Series Resistance |
c-Si | Single-crystalline silicon |
mc-Si | microcrystalline Silicon |
tf-Si | Thin-film silicon |
a-Si | Amorphous silicon |
MIG | Metal–insulator–graphene |
IRA | Infrared-frequency Rectifying Antenna |
IPA | Isopropyl Alcohol |
SEM | Scanning Electron Microscope |
GGD | Graphene-based geometric diodes |
TEG | Thermoelectric energy generators |
ML | Machine Learning |
EHWSN | Energy Harvesting Wireless Sensor Network |
EH | Energy Harvesting |
TX | Transmitter |
RX | Receiver |
PMOS | Positive-Channel Metal-Oxide Semiconductor |
NMOS | Negative-Channel Metal-Oxide Semiconductor |
CMOS | Complementary Metal-Oxide-Semiconductor |
DIBL | Drain-Induced Barrier Lowering |
BLE | Bluetooth Low Energy |
LE | Low Energy |
BR/EDR | Bluetooth Basic Rate/Enhanced Data Rate |
UWB | Ultra-Wideband |
Wi-Fi | Wireless Fidelity |
LANs | Local Area Networks |
DSSS | Direct Sequence Spread Spectrum |
MIMO-OFDM | Multiple-input, multiple-output orthogonal frequency-division multiplexing |
LOS | Line-Of-Sight |
CSMA/CA | Carrier Sense Multiple Access with Collision Avoidance |
FSK | Frequency-Shift Keying |
GFSK | Gaussian Frequency Shift Keying |
RF | Radio Frequency |
BDMA | Big Data Management and Analytics |
PSTN | Public Switched Telephone Network |
GEO | Geostationary Satellites Orbit |
LEO | Low Earth Orbit |
ENO | Energy-neutral operation |
PNO | Power-neutral operation |
IC | Intermittent computing |
ULPMU | Ultra-low power management unit |
IR | Infrared |
ADC | Analog-to-Digital Converter |
Mg | Magnesium |
Al | Aluminum |
Fe | Iron |
Zn | Zinc |
Al–air | Aluminum–air |
Ca–air | Calcium–air |
Mg–air | Magnesium–air |
Fe–air | Iron–air |
Li–air | Lithium–air |
Zn–air | Zinc–air |
TFBs | Thin-film batteries |
SC | Solar Cell |
PVE | Photovoltaic Effect |
Eg | bandgap |
AC | Alternating Current |
MCU | Microcontroller Unit |
EMW | Electromagnetic Wave |
SPPs | Surface plasmon polaritons |
LPF | Low-Pass Filter |
MIM | Metal-insulator-metal |
MInM | Metal Multi-Insulator Metal, n represents the number of ultrathin insulator layers |
FOM | Figures of Merit |
Asym | Asymmetry |
NL | nonlinearity |
S | Responsivity |
TOV | Turn-on Voltage |
ZBR | Zero-Bias Resistance |
ALD | Atomic Layer Deposition |
S&Q | Shockley–Queisser |
EBL | Electronic Beam Layer |
MIBK | Methyl Isobutyl ketone |
ANN | Artificial Neural Networks |
HEH | Hybrid Energy Harvesting |
RFID | Radio-Frequency Identification |
UHF | Ultra-high frequency |
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IRIS [2] | MicaZ [3] | IMote2 [4] | SunSpot [5] | Waspmote [6] | WiSMote [7] | |
---|---|---|---|---|---|---|
Radio standard | 802.15.4/ZigBee | 802.15.4/ZigBee | 802.15.4 | 802.15.4 | 802.15.4/ ZigBee | 802.15.4/ZigBee/6LoWPAN |
Microcontroller | ATmega 1281 | ATMEGA 128 | Marvell PXA271 | ARM 920 T | Atmel ATmega 1281 | MSP430F5437 |
Sleep | 8 μA | 15 μA | 390 μA | 33 μA | 55 μA | 12 μA |
Processing | 8 mA | 8 mA | 31–53 mA | 104 mA | 15 mA | 2.2 mA |
Receive | 16 mA | 19.7 mA | 44 mA | 40 mA | 30 mA | 18.5 mA |
Transmit | 15 mA | 17.4 mA | 44 mA | 40 mA | 30 mA | 18.5 mA |
Idle | – | – | – | 24 mA | – | 1.6 mA |
Supply | 2.7–3.3 V | 2.7 V | 3.2 V | 4.5–5.5 V | 3.3–4.2 V | 2.2–3.6 V |
Average | – | 2.8 mW | 12 mW | – | – | – |
Reference | Energy Source | Method | Merit | Power Density | Efficiency | Weakness | Applications |
---|---|---|---|---|---|---|---|
[10,11,12] | Light Energy | Photovoltaic | Predictable, Mature | 5–100 mW/cm2 (Outdoor) 0.5–1000 μW/cm2 (Indoor) | 30% 15% | Expensive, light not steadily available, Maximum Power Point Tracking (MPPT) is needed. | Biometric, agriculture, monitoring, ZNE building, indoor and portable devices |
[13] | Radio-frequency energy | Rectenna | Continuously available, can carry and process information simultaneously | 0.01–0.3 μW/cm2 | ±50% | Efficiency decreases with distance, impedance matching is needed | Sensor, nuclear, wirelessly powering |
[14] | Thermal radiation is emitted by objects at moderate temperatures, typically within the range of 300 to 4000 K. This also encompasses the radiation emitted by the Earth’s surface. | Rectenna | Continuous available, waste heat can be used | 60 mW/cm2 | 1% | Limited conversion efficiency, thermal losses, narrow bandwidth, challenges in design and fabrication, impedance matching needed | Energy harvesting, thermal imaging, remote sensing, communications, spectroscopy |
State | |||
---|---|---|---|
Module | Operation | Classifier | Consumption |
Communication | RX (RF) | Active | Tens of mA |
TX (RF) | Active | Tens of mA | |
Sleep | Inactive | μA | |
Computation | Processing | Active | Hundreds of μAMHz−1 |
Memory access | Active | mA | |
Sleep | Inactive | μA | |
Sensing | Sampling | Active | μA—hundreds of mA |
Warm-up | Active | μA—hundreds of mA | |
Sleep | Inactive | μA |
Pros | Drawbacks | |
---|---|---|
Supply voltage scaling VDD | scaling VDD ⇒ scaling PSwitching quadratically | scaling VDD ⇒ lower circuit speed (decreasing circuit performance) |
Frequency Scaling fSW | scaling fClock ⇒ scaling PSwitching linearly | scaling fClock ⇒ lower circuit speed (decreasing circuit performance) |
Minimization of switched capacitance CL (small transistors, short wires, smaller fan-out) | Scaling C ⇒ scaling PSwitching and heat dissipation; | Potential degradation of signal quality; limited flexibility for system modifications or upgrades |
Switching activity α | Lower switching activity α ⇒ more energy-efficient; lower switching activity α ⇒ reduced Electromagnetic Interference (EMI) | Extremely low switching activity α ⇒ increased propagation delays; extremely low switching activity α ⇒ instability and issues like signal crosstalk in the circuit; optimizing switching activity α ⇒ careful design considerations |
Specifications | Bluetooth Classic BR/EDR 1 | BLE | |
---|---|---|---|
Bluetooth 4.x | Bluetooth 5 | ||
Radio freq. (MHz) | 2400 to 2483.5 | 2400 to 2483.5 | 2400 to 2483.5 |
Channels | 79 (1 MHz) | 40 (2 MHz) | 40 (2 MHz) |
Distance (m) | Up to 100 | Up to 100 | Up to 200 |
Latency (ms) | 100 | <6 | <6 |
Data rate (Mbps) | 1, 2, 3 | 1 | 0.5, 0.125, 1, 2 |
Max active nodes | 8 | Unlimited | Unlimited |
Massage size (bytes) | Up to 358 | 31 | 255 |
Max payload (bytes) | 1021 | 37,255 | 255 |
Peak current (mA) | <30 | <15 | <15 |
Amendment | Naming Convention | Year | Operating Band | Max Bandwidth | Max Data Rate | PHY | Low Latency | Low Power |
---|---|---|---|---|---|---|---|---|
802.11b | Wi-Fi 1 | 1999 | 5 GHz | 22 MHz | 11 Mbps | DSSS | yes | yes |
802.11a | Wi-Fi 2 | 1999 | 2.4 GHz | 20 MHz | 54 Mbps | OFDM | yes | yes |
802.11g | Wi-Fi 3 | 2003 | 2.4 GHz | 20 MHz | 54 Mbps | MIMO-OFDM | yes | yes |
802.11n | Wi-Fi 4 | 2008 | 2.4/5 GHz | 40 MHz | 600 Mbps | OFDM | yes | yes |
802.11ac | Wi-Fi 5 | 2014 | 5 GHz | 40 MHz | 6.39 Gbps | 256-QAM, OFDM, DL MIMO, channel bounding | yes | yes |
802.11ah | Wi-Fi HaLow | 2017 | Sub-1 GHz | 16 MHz | 347 Mbps | OFDM, DL-MU MIMO | yes | yes |
802.11ax | Wi-Fi 6 | 2019 2020 (6E) | 2.4/5 GHz, 6 GHz for Wi-Fi 6E | 160 MHz | 9.6 Gbps | OFDMA, UL/DL MIMO, Channel Bounding | yes | yes |
802.11be | Wi-Fi 7 | 2024 | 2.4/5/6 GHz | 20 MHz | 40 Gbps | 4096-QAM, Coordinated OFDMA, UL/DL MIMO | yes | yes |
Parameters | ZigBee |
---|---|
Standard | IEEE 802.15.4 |
Frequency band | 868/915 MHz and 2.4 GHz |
Modulation type | BPSK/OQPSK |
Spreading | DSSS |
Number of RF channels | 1, 10, and 16 |
Channel bandwidth | 2 MHz |
Power consumption in TX mode | Low (36.9 mW) |
Data rate | 20, 40, and 250 kbps |
Latency | (20–30) ms |
Communication range | 100 m |
Network size | 65,000 |
Cost | Low |
Security capability | 128 bits AES |
Network Topologies | P2P, tree, star, mesh |
Application | WPANs, WSNs, and Agriculture |
Limitations | line-of-sight (LOS) between the sensor node and the coordinator node must be available |
Parameters | Z-Wave |
---|---|
Standard | ITU-T G.9959 (PHY and MAC) |
RF Frequency Range | 868.42 MHz in Europe, 908.42 MHz in US |
Data rate | 9.6, 40, 100 Kbps |
Maximum Nodes | 232 |
Architecture | Master and slave in mesh mode |
MAC layer | CSMA/CA |
RF PHY modulation | FSK (for 9.6 kbps and 40 kbps), GFSK with BT = 0.6 (for 100 kbps) |
Coding | Manchester (for 9.6 kbps), NRZ (for 40 and 100 kbps) |
Distance | 30 m in indoors, 100 m the outdoors |
Standard | Network | Topology | Power | Frequency Bands | Data Rate | Range | Spreading | Security | Common Applications |
---|---|---|---|---|---|---|---|---|---|
IEEE 802.15.4 | WPAN | Star, Mesh | Low | 868 MHz (EU), 915 MHz (USA), 2.4 GHz (Global) | 250 kbps | 10–100 m Short Range | DSSS | AES-128 | Monitor and Control via Internet |
Coverage | Payload | Data Rate (Max) | Frequency Range | Security | Transmission Power |
---|---|---|---|---|---|
15 Km | 243 Bytes | <50 kbps | 125 kHz | AES Encryption | 20 dBm |
Coverage | Payload | Data Rate (Max) | Frequency Range | Security | Transmission Power |
---|---|---|---|---|---|
13 Km | 12 Bytes | <100 kbps | 868/915 MHz | None | 13.5 dBm |
Modulation | Band | Data Rate | Range | MAC | Topology | Payload Size | Proprietary Aspects | Deployment Model |
---|---|---|---|---|---|---|---|---|
QPSK | Licensed 700–900 MHz | 158.5 kbps (UL) 1, 106 kbps (DL) 2 | 15 km | FDMA/OFDMA | Star | 125 B (UL), 85 B (DL) | Full stack | Operator-based |
Technology | Frequency Band | Range | Maximum Data Rate | Channel Bandwidth | Modulation | Scalability | Reliability | Low Latency | Low Power |
---|---|---|---|---|---|---|---|---|---|
LTE-M (Rel13) | 1.7–2.1 GHz, 1.9 GHz, 2.5–2.7 GHz | 12 km | 1 Mbps | 1.4 MHz | BPSK/QPSK | Yes | Yes | Yes | Yes |
LTE-M (Rel14) | 1.7–2.1 GHz, 1.9 GHz, 2.5–2.7 GHz | 12 km | 4 Mbps | 5 MHz | BPSK/QPSK | Yes | Yes | Yes | Yes |
2G | 3G | 4G | 5G | |
---|---|---|---|---|
Year of Introduction | 1993 | 2001 | 2009 | 2018 |
Technology | GSM | WCDMA | LTE, WiMAX | MIMO, mmWaves |
Access System | TDMA, CDMA | CDMA | CDMA | OFDM, BDMA |
Switching Type | Circuit, packet | Circuit, packet | Packet | Packet |
Network | PSTN | PSTN | Packet Network | Internet |
Internet Service | Narrowband | Broadband | Ultrabroadband | Wireless World Wide Web |
Bandwidth | 25 MHz | 25 MHz | 150 MHz | 700 MHz (Europe) |
Speed | 64 Kbps | 8 Mbps | 300 Mbps | 10–30 Gbps |
Latency | 300–1000 ms | 100–500 ms | 20–30 ms | 1–10 ms |
Mobility | 60 km | 100 km | 200 km | 500 km |
Parameters | 4G | 5G | 6G |
---|---|---|---|
Peak data rate/device | 1 Gbps | 10 Gbps | 1 Tbps |
Latency | 100 ms | 1 ms | 0.1 ms |
Max. spectral efficiency | 15 bps/Hz | 30 bps/Hz | 100 bps/Hz |
Energy efficiency | <1000× relative to 5G | 1000× relative to 4G | >10× relative to 5G |
Connection density | 2000 devices/km2 | 1 million devices/km2 | >10 million devices/km2 |
Coverage percent | <70% | 80% | >99% |
Positioning precision | Meters precision (50 m) | Meters precision (20 m) | Centimeter precision |
End-to-end reliability | 99.9% | 99.999% | 99.9999% |
Receiver sensitivity | Around −100 dBm | Around −120 dBm | <−130 dBm |
Mobility support | 350 km/h | 500 km/h | >1000 km/h |
Satellite integration | No | No | Fully |
AI | No | Partial | Fully |
Autonomous vehicle | No | Partial | Fully |
Extended Reality | No | Partial | Fully |
Haptic Communication | No | Partial | Fully |
THz communication | No | Limited | Widely |
Service level | Video | VR, AR | Tactile |
Architecture | MIMO | Massive MIMO | Intelligent surface |
Max. frequency | 6 GHz | 90 GHz | 10 THz |
Parameter | GEO | LEO |
---|---|---|
Altitude | 36,000 km | 500 to 1200 km |
Coverage area | Vast | Narrow |
Downlink and uplink rate (signal speed) | Slow | Fast |
Ground station spacing | Distant | Local |
Antenna | Stationary | Complex tracking and terrestrial network |
Band | ||
Frequency | band (4–8 GHz), Ku-band (12–18 GHz), and Ka-band (26.5–40 GHz) | L-band (1–2 GHz) |
Capacity uplink | 10–50 Mbps | 100 Mbps for traditional LEO; 1 Gbps for advanced LEO |
Capacity downlink | 100–500 Mbps | 500 Mbps for traditional LEO; 10 Gbps for advanced LEO |
Latency | 550 ms | 25–50 ms |
Advantages |
|
|
Disadvantages |
|
|
Functions | Descriptions |
---|---|
Monitoring and managing the battery level | The PMU monitors the battery level of the node to maintain optimal power supply |
Power gating | The PMU controls power supply to node components, turning them on or off to save power |
Sleep modes | PMU can optimize power usage by putting the node into low-power sleep modes when not in use, thus conserving battery life. |
Voltage regulation | PMU regulates node component voltage to ensure optimal operation and reduce power wastage |
Power optimization | PMU uses power-saving algorithms and techniques like duty cycling and voltage scaling to optimize node power consumption. |
DC-DC Converter | Minimum VIN | Maximum VIN | Vout | MPPC/MPPT |
---|---|---|---|---|
LTC3108 | 20 mV | 500 mV | 2.35 V to 5 V | No |
LTC3105 | 250 mV (start-up mode) 225 mV (regime mode) | 5 V | 3.3 V | Yes |
Energy Source Types | Description |
---|---|
Uncontrolled but predictable | Although unpredictable, renewable energy can be accurately planned out, allowing us to anticipate its availability within a certain margin of error. |
Uncontrolled and unpredictable | Unpredictable and inconsistent, this energy source is difficult to regulate or manage due to its natural variability and intermittent availability. |
Fully controllable | Energy can be generated when desired |
Partially controllable | This energy source shows some level of control over the output, but is not fully controllable or predictable. |
Energy Source | Predictable | Unpredictable | Controllable | Non-Controllable |
---|---|---|---|---|
Solar | ✓ | ✓ | ||
RF | ✓ | ✓ | ||
Thermal | ✓ | ✓ | ||
Pyroelectric | ✓ | ✓ |
Type | Rated Voltage (V) | Capacity (Ah) | Temperature Range (°C) | Cycling Capacity | Specific Energy (Wh/kg) |
---|---|---|---|---|---|
Lead-Acid | 2 | 1.3 | −20–60 | 500–1000 | 30–50 |
MnO2Li | 3 | 0.03–5 | −20–60 | 1000–2000 | 280 |
Li poly-carbon | 3 | 0.025–5 | −20–60 | - | 100–250 |
LiSOCl2 | 3.6 | 0.025–40 | −40–85 | - | 350 |
LiO2S | 3 | 0.025–40 | −60–85 | - | 500–700 |
NiCd | 1.2 | 1.1 | −40–70 | 10,000–20,000 | 50–60 |
NiMH | 1.2 | 2.5 | −20–40 | 1000–20,000 | 60–70 |
Li-Ion | 3.6 | 0.74 | −30–45 | 1000–100,000 | 75–200 |
MnO2 | 1.65 | 0.617 | −20–60 | - | 300–610 |
Battery Generation | Technology/Electrode Active Materials | Cell Chemistry/Type | Implementation Date/Forecast Market Deployment |
---|---|---|---|
Gen 1 | Cathode: NFP, NCA, LCO 1 Anode: Carbone/Graphite | Lithium-Ion | 1991 |
Gen 2a | Cathode: NMC111, LMO2 2 Anode: Carbone/Graphite | Lithium-Ion | 1994 |
Gen 2b | Cathode: NMC532, NMC622 3 Anode: Carbone/Graphite | Lithium-Ion | 2005 |
Gen 3a | Cathode: NMC622, NMC 811 4 Anode: Graphite + 5/10% Si | Lithium-Ion | 2020 |
Gen 3b | Cathode: High Energy NMC, High Voltage Spinel—5 V Anode: Silicon/Carbon | Optimized Lithium-Ion | 2025 |
Gen 4a | Cathode: NMC Anode: Silicon/Carbon Solid Electrolyte | Solid State Lithium-Ion | 2025 |
Gen 4b | Cathode: NMC Anode: Lithium metal Solid Electrolyte | Solid State Lithium-Metal | >2025 |
Gen 4c | Cathode: High Energy NMC, High Voltage Spinel Anode: Lithium metal Solid Electrolyte | Advanced Solid State | 2030 |
Gen 5 | LiO2 Li–Air/Metal–Air Li-Sulphur New ion-based systems (Na, Mg, Zn or Al) | Metal–Air | >2030 |
LiS | |||
New ion-based insertion chemistries |
Capacitor | Battery |
---|---|
Electric field for storage | The chemical reaction for storage |
Submissive component | Active component |
Energy density is low | Energy density is high |
Charging/discharging is fast | Charging/discharging is slow |
Provides unstable voltage | Provides constant voltage |
Operating temperature range is −3 °C to +125 °C | 20 °C to 30 °C during charging and 15 °C to 25 °C during discharging |
Higher cost | Low cost |
Contrived of metal sheets | Contrived of metals, chemicals |
Supercapacitor | Life Cycle (-) | Specific Energy (Wh/kg) | Operating Temperature (°C) | Cell Voltage (V) |
---|---|---|---|---|
Maxwell PC10 | 500,000 | 1.4 | −40–70 | 2.50 |
Maxwell BCAP0350 | 500,000 | 5.1 | −40–70 | 2.50 |
Green-cap EDLC | >100,000 | 1.47 | −40–60 | 2.70 |
EDLC SC | 1,000,000 | 3–5 | −40–65 | 2.70 |
Pseudo SC | 100,000 | 10 | −40–65 | 2.3–2.8 |
Hybrid SC | 500,000 | 180 | −40–65 | 2.3–2.8 |
Property | Batteries | Fuel Cells | Capacitors | Supercapacitors |
---|---|---|---|---|
Weight | 1 g–>10 kg | 20 g–>5 kg | 1 g–10 g | 1 g–230 g |
Operating temperature | −20 to 65 °C | 25 to 90 °C | −20 to 100 °C | −40 to 85 °C |
Operating voltage | 1.25–4.2 V | 0.6 V | 6–800 V | 2.3–2.7 V |
Power density | 0.005–0.4 KW/Kg | 0.001–0.1 KW/Kg | 0.25–10.0 KW/Kg | 10–120 KW/Kg |
Energy density | 8 to 600 Wh/Kg | 300 to 3 Wh/Kg | 0.01 to 0.05 Wh/Kg | 1–10 Wh/Kg |
Pulse load | ~5 A | ~150 mA/cm2 | ~1000 A | ~100 A |
Life cycle | 50,000 h + Unlimited Cycles | >100,000 cycles | 1500–10,000 h | 150–1500 cycles |
Capacitance | - | - | 10 pF–2.2 mF | 100 mF–1500 F |
Charge/discharge time | 1–10 h | 10–300 h | Picoseconds—milliseconds | Millisecond—seconds |
Columbic efficiency | 70–85% | - | About 100% | Up to 99% |
Charge method | Current and voltage | - | The voltage across the terminal, i.e., from a battery | The voltage across the terminal, i.e., from a battery |
Energy Storage Type | Energy Density (Wh/kg) | Advantages | Disadvantages | References |
---|---|---|---|---|
Lead acid | 25–50 |
|
| [81] |
NiCd | 40–75 |
|
| [82] |
NiMH | 70–100 |
|
| [83] |
Li-Ion | 150–350 |
|
| [84] |
Capacitors | 0.01–0.05 |
|
| [85] |
Supercapacitors | 2–5 |
|
| [86] |
Device Configuration | Electrolyte | Electrode Type | Energy Density (Wh/kg) | Power Density (W/kg) | Publication Year | Reference |
---|---|---|---|---|---|---|
WO3-WS2-MWCNT/Ni foam// AC/Ni foam | 3 M KOH | (+) PC//EDLC (−) | 86 24 | 848 11,828 | 2023 | [87] |
Ni-Co-Mg MOF/MoS2/Ni foam// AC/Ni foam | 1 M KOH | (+) PC//EDLC (−) | 107.32 | 1350 | 2023 | [88] |
NH4MnPO4@Graphene QD/Graphite//rGO/Graphite | 3 M H2SO4 3 M H2SO4 + 0.025 M (KI/VOSO4) | (+) PC//EDLC (−) | 199 311 | 450 450 | 2022 | [89] |
Ni3(PO4)2-MWCNTs/Ni foam// AC/Ni foam | (+) PC//EDLC (−) | 94.4 24.82 | 340 10,200 | 2022 | [90] | |
Mn-V-Sn oxyhydroxide/Ni foam// N-carbon/Ni foam | 1 M KOH | (+) PC//EDLC (−) | 70.6 17.1 | 1372.4 18,861.3 | 2022 | [91] |
NH4OH-ZIF/Ni foam//GO/Ni foam | 6 M KOH | (+) PC//EDLC (−) | 4.16 | 20,000 | 2022 | [92] |
CoS-Co3(PO4)2/Ni foam//AC/Ni foam | 1 M KOH | (+) PC//EDLC (−) | 34.68 63.93 | 13,600 850 | 2021 | [93] |
Fe3O4@N-carbon-rGO/Ni foam// rGO/Ni foam | 6 M KOH | (+) PC//EDLC (−) | 46 10 | 750 7500 | 2021 | [94] |
MWCNT-NiMnPO4/Ni foam// AC/Ni foam | 2 M KOH | (+) PC//EDLC (−) | 698 43 | 78 5780 | 2020 | [95] |
graphitic carbon nitride (g-C3N4)-BiVO4/Graphite paper (symmetric) | 3.5 M KOH | (+) PC//PC (−) | 61 7.2 | 1996 16,200 | 2020 | [96] |
Zn-Carbon cloths//S/P doped carbon (S/p-C)/graphite rod | 0.5 M K2SO4 1 M KBr | (+) PC//PC (−) | 270 181 | 185 9300 | 2020 | [97,98] |
Advantages | Disadvantages |
---|---|
High energy density | Limited cycle life |
Long range | Slow recharge rate |
Low cost | Limited power output |
Rechargeable | Corrosion |
Environmentally friendly | Limited availability |
Metal Oxygen | Open Circuit Potential (Volts) | Energy Density (Wh/kg) | Energy Density (Wh/L) |
---|---|---|---|
Al–air | 2.71 | 4116 | 14,100 |
Ca–air | 3.10 | 2980 | 9960 |
Mg–air | 3.08 | 3991 | 12,200 |
Fe–air | 1.35 | 763 | 1431 |
Li–air | 2.96 | 3458 | 6102 |
Zn–air | 1.68 | 1054 | 5960 |
Current Collectors | Electrode | Electrolyte | Voltage Window | Reference |
---|---|---|---|---|
Au | Cathode | 1 M LiClO4 in PC 1 1 M LiPF6 in EC/DMC 2 | 3–5 3–4.4 | [104] |
Ag | Cathode | 1 M LiClO4 in PC 1 M LiPF6 in EC/DMC | 3–3.7 | [105] |
Al | Cathode | 1 M LiClO4 in PC 1 M LiPF6 in EC/DMC | 1.5–5.5 1.5–5 | [106] |
Ni | Cathode | 1 M LiPF6 in EC/DMC | 3–4.5 | [107] |
Stainless steel | Cathode | 1 M LiPF6 in EC/DMC | 3–4.5 | [108] |
Stainless steel | Cathode | 1 M LiPF6 in EC/DMC | 1.5–5.5 | [109] |
Cr | Cathode/anode | 1 M LiPF6 in EC/DMC | 0–4 | [110] |
Ti | Cathode/anode | 1 M LiPF6 in EC/DMC | 0–4 | [111] |
TiN | Cathode/anode | 1 M LiPF6 in EC/DMC | 0–4.12 | [112] |
Carbon fiber paper | Cathode/anode | 1 M LiPF6 in EC/DMC | 1.5–3 | [113] |
Stainless steel | Cathode/anode | 1 M LiPF6 in EC/DMC | 2–3.4 | [114] |
Fe | anode | 1 M LiPF6 in EC/DMC | 0–3.2 | [115] |
Cu | anode | 1 M LiPF6 in EC/DMC | 0–3 | [116] |
Energy Source | Technology | Power Density | Advantages | Disadvantages | Application Domain |
---|---|---|---|---|---|
Solar [114] | PV cell | 10–100 mW/cm2 (outdoor) <100 μW/cm2 (indoor) | High output voltage Low fabrication costs Predictable | Unavailable at night Non-controllable | Environment monitoring, healthcare, agriculture |
RF [115] | Rectenna | 0.01–0.1 μW/cm2 1–10 mW/cm2 | Available anywhere, anytime Predictable Controllable | Distance dependent Low power density Interference | Environment monitoring |
MID-IR [15] | Rectenna | 60 mW/cm2 | Sustainable and reliable Available Controllable | Low power density Low efficiency | Environment monitoring, healthcare, |
Full Name | Designation | Description |
---|---|---|
Efficiency or power conversion efficiency (PCE) | ƞ | It indicates how much energy can be extracted from sunlight by a single P–N junction |
Open-Circuit Voltage | Voc | It indicates the maximum voltage that a solar cell can generate under illumination |
Short-Circuit Current | Isc | It represents the maximum current that a solar cell can produce under full sunlight exposure |
Fill Factor | FF | FF represents how efficiently a solar cell converts sunlight into electricity |
Maximum Power Point | Pmax | Pmax represents the maximum electrical power output that a solar cell can generate |
Voltage at Maximum Power | Vmpp | The voltage at which the solar cell operates to produce the maximum power output. |
Current at Maximum Power | Impp | The current at which the solar cell operates to produce the maximum power output. |
Shunt Resistance | Rsh | A higher Rsh value signifies reduced leakage current and enhanced efficiency. |
Series Resistance | Rs | Lower Rs values lead to better performance. |
Material | Sub-Material | ƞ | Advantages | Problems |
---|---|---|---|---|
Single crystal | 20% [119] | |||
c-Si | Polycrystal | 16% [126] | Cost-effective as compared to the monocrystalline module [120]. | |
a-Si | 11.3% [127] | |||
CdTe/CdS | 18.3% [130] | |||
Thin Films | CIS/CIGS | 22.8% [132] |
| In and Ga sources are limited [134]. |
GaAs | Over 30% [135] | |||
Organic Semiconductors | 18% | Flexibility and versatility; Low-cost production; Tunable properties; Large-area fabrication | Low carrier mobility; Sensitivity to environmental factors; Limited device lifetime; Narrow operational temperature range; Limited energy levels and bandgaps | |
Quantum Dots | 20% | Size-tunable properties; High quantum yield; Broad absorption spectra; Good stability; Compatibility with different substrates | Toxicity concerns; Cost; Limited device lifetime; Difficulty in large-area deposition; Complexity | |
Quantum Wells | 40–50% (only in laboratory) | Bandgap engineering; Improved carrier confinement; Efficient light emission; Compatibility with existing semiconductor technologies; High quantum efficiency | Complexity of fabrication; Strain-related issues: Temperature sensitivity Narrowband emission Sensitivity to defects | |
Perovskite | 24% | High light absorption; Tunable bandgap; Solution processability; High charge carrier mobility; Versatility; High efficiency | Environmental stability; Toxic materials; Performance and reproducibility; Limited device lifetime; Scalability issues |
Material Structure | S, cm2 | Jsc, mA/cm2 | FF, % | Efficiency |
---|---|---|---|---|
c-Si | 4.00 | 40.9 | 82.7 | 24.0 |
c-Si | 45.7 | 39.4 | 78.1 | 21.6 |
c-Si | 22.1 | 41.6 | 80.3 | 23.4 |
mc-Si | 1.00 | 36.5 | 80.4 | 18.6 |
mc-Si | 100 | 36.4 | 77.7 | 17.2 |
tf-Si | 240 | 27.4 | 76.5 | 12.2 |
tf-Si | 4.04 | 379 | 81.1 | 21.1 |
a-Si:H | 1.06 | 16.66 | 71.7 | 10.3 |
a-Si:H | 0.99 | 17.46 | 70.4 | 10.9 |
a-Si:H | 1.0 | 19.4 | 74.1 | 12.7 |
a-Si:H | 1.08 | 18.8 | 70.1 | 1 1.5 |
ITO/c-Si/a-Si | 1.0 | 39.4 | 79.0 | 20.0 |
a-Si:H | 1.0 | 19.13 | 70.0 | 12.0 |
a-Si:H | 1.0 | 18.4 | 72.5 | 12.3 |
a-Si/a-Si/a-SiGe | 7.3 | 73.0 | 12.4 | |
a-Si:H | 1.0 | 19.4 | 74.1 | 12.7 |
a-C/a-SiML/a-SiC/a-Si | 1.0 | 19.6 | 71.8 | 13.2 |
a-C/a-Si/a-SiC/a-Si | 1.0 | 19.8 | 73.3 | 13.2 |
ITO/a-Si:H/a-SiGe:H | 0.28 | 11.72 | 65.8 | 12.5 |
a-Si/k-Si | 0.03 | 16.2 | 63.0 | 15.0 |
a-SiC/a-Si | 1.0 | 8.16 | 71.2 | 10.2 |
a-Si/a-Si | 1.0 | 9.03 | 74. I | 12.0 |
a-SiC/a-SiGe/a-SiGe | 1.0 | 7.9 | 68.5 | 12.4 |
a-Si/a-Si/a-siGe | 1.0 | 7.66 | 70.1 | 13.7 |
p-a-SiO:H/a-Si:H/n-a-Si:H | 1.0 | 18.8 | 74.0 | 12.5 |
ITO/a-Si:H/Si:H/a-siGe | 0.27 | 6.96 | 70 | 12.4 |
a-Si:H/a-Si:H/a-SiGc:H | 1.00 | 7.9 | 68.5 | 12.4 |
a-Si/CuInSe2 | 16.4 17.4 | 72.0 68.0 | 10.3 5.3 | |
a-Si/mc-Si | 10.4 30.2 | 76.0 79.2 | 7.25 13.75 |
Material Structure | S, cm2 | Jsc, mA/cm2 | FF% | Efficiency% |
---|---|---|---|---|
ss/ITO/CdS/CdTc//Cu/Au | 0.191 | 20.10 | 69.4 | 11.0 |
ss/SnO2/CdS/CdTe | 0.824 | 20.66 | 74.0 | 12.8 |
ss/SnO2/CdS/CdTe | 0.313 | 24.98 | 62.7 | 12.3 |
ss/SnO2/CdS/CdTe | 0.3 | 26.18 | 61.4 | 12.7 |
ss/SnO2/CdS/HgTeGa | 1.022 | 21.9 | 65.7 | 10.6 |
MgF2/ss/SnO2/CdS//CdTe/C/Ag | 1.047 | 25.09 | 74.5 | 15.8 |
ss/SnO2/CdS/CdTe/Ni | 1.068 | 20.93 | 69.6 | 11.2 |
ss/SnO2/CdS/CdTe | 0.08 | 22.1 | 66.0 | 10.9 |
MgF2/ss/SnO2/CdS/CdTe | 1.115 | 20.9 | 74.6 | 12.9 |
Ss/SnO2/CdS/CdTe/Cu/Au | 0.114 | 17.61 | 72.8 | 10.4 |
CdTe | 12.7 |
PCE (%) | Voc (V) | Jsc (mA/cm2) | FF | Device Configuration | Year | Reference |
---|---|---|---|---|---|---|
7.11 | 0.63 | 18.61 | 0.606 | FTO/PCBM/CsSn0.5Ge0.5I3/Spiro-OMeTAD/Au | 2019 | [146] |
7.37 | 0.73 | 15.8 | 0.64 | Au/TiO2/m-TiO2/MASn0.25Pb0.75/Spiro-OMeTAD/Au | 2014 | [147] |
7.66 | 0.97 | 11.1 | 7.66 | ITO/ZnO/MASnI3/spiro-OMeTAD/Au | 2015 | [148] |
9 | 0.52 | 24.1 | 0.71 | ITO/PEDOT:PSS/FASnI3/C60BCP/Ag | 2017 | [149] |
9.2 | 0.61 | 21.2 | 0.72 | ITO/PEDOT:PSS/GAxFA0.98−xSnI3–1% EDAI2/C60 (20 nm)/BCP/Ag | 2018 | [150] |
9.8 | 0.76 | 19.1 | 0.66 | ITO/PEDOT:PSS/MAPb0.85Sn0.15I3−yCly/PC61BM/Ag | 2014 | [151] |
10.2 | 0.72 | 19.2 | 0.73 | FTO/TiO2/N719 Dye/Perovskite/ZnO | 2012 | [152] |
12.1 | 0.78 | 20.65 | 0.75 | ITO/PEDOT: PSS/MASn0.6Pb0.4I3−xBrx/PCBM/Ag | 2017 | [153] |
13.24 | 0.84 | 20.32 | 0.78 | FTO/PEDOT PSS/EA0.98EDA0.01SnI3/C60BCP/Au | 2020 | [154] |
14.06 | 0.79 | 22.8 | 0.78 | ITO/PEDOTPSS/MA0.5FA0.5Pb0.75Sn0.25I3/PC61 BM/C60/Ag | 2016 | [155] |
10.2 | 0.7 | 21.9 | 0.66 | ITO/PEDOT:PSS/FASn0.5Pb0.5I3/C60 BCP/Ag | 2016 | [156] |
14.1 | 0.74 | 26.1 | 0.71 | ITO/PEDOT:PSS/C60 BCP/Ag | 2016 | [157] |
15.08 | 0.79 | 26.86 | 0.70 | ITO/PEDOT:PSS/(CH3NH3)0.4[HC(NH2)2]0.6Sn0.6Pb0.4I3/C60/BCP/Ag | 2016 | [158] |
17.55 | 1.03 | 21.9 | 0.78 | ITO/PEDOT:PSS/MAPb0.85In0.15I3Cl0.15/PC61 BM/Bphen/Ag | 2016 | [159] |
18 | 1.02 | 22.4 | 0.78 | FTO/SnO2/Cs0.16FA0.84Pb(I0.88Br0.12)3/Spiro-OMeTAD/Au | [160] | |
19.1 | 1.01 | 22.4 | 0.78 | FTO/Poly-TPD/0.15 mol% Al3+-doped CH3NH3PbI3/PCBM/BCP/Ag | 2016 | [161] |
22.3 | 1.71 | 24.1 | 0.81 | ITO/PTAA/Cs0.05(FA0.92MA0.08)0.95Pb(I0.92Br 0.08)3/C60/BCP/Cu | 2020 | [162] |
23 | 1.16 | 24 | 0.82 | Glass/ITO/PTAA/(Cs0.05(FA5/MAI)0.95Pb(I0.9Br0.1)3)/PCBM/BCP/Ag | 2021 | [163] |
23.7 | 1.16 | 24.16 | 0.84 | Glass/ITO/PTAA/PEAI/(Cs0.05(FA5/MAI)0.95Pb(I0.9Br0.1)3)/PEAI/PCBM/BCP/Ag | 2021 | [164] |
24.6 | 1.05 | 25.5 | 0.83 | FTO/SnO2/(FAPbI3)0.95(MAPbBr3)0.05/P3HT/Au | 2023 | [165] |
24.8 | 1.16 | 26.35 | 0.8 | FTO/c-TiO2/m-TiO2/FAPbI3/Spiro-OMeTAD/Au | 2020 | [166] |
25.4 | 1.19 | 25.09 | 0.84 | FTO/SnO2/MAPbBr3/HTL/back contact | 2021 | [167] |
25.5 | 1.18 | 25.74 | 0.83 | FTO/SnO2-Cl/FAPbI3/Spiro-OMETAD/Au | 2021 | [168] |
Source | Conditions | Frequency | Power Density | Efficiency |
---|---|---|---|---|
DTV | 470–610 MHz | 0.89 nW/cm2 | ±50% | |
GSM (MT) | 880–915 MHz | 0.45 nW/cm2 | ±50% | |
GSM/4G LTE 900 (BT) | 920–960 MHz | 36 nW/cm2 | ±50% | |
RF (Average) [170] | GSM/4G LTE 1800 (MT) | 1710–1785 MHz | 0.5 nW/cm2 | ±50% |
GSM 1800 (BT) | 1805–1880 MHz | 84 nW/cm2 | ±50% | |
3G (MT) | 1710–1785 MHz | 0.46 nW/cm2 | ±50% | |
3G (BT) | 2110–2170 MHz | 12 nW/cm2 | ±50% | |
Wi-Fi | 2.4–2.5 GHz | 0.18 nW/cm2 | ±50% | |
4G LTE 2600 | 2500–2690 | 0.3 mW/cm2–0.000767 mW/m2 | ±50% |
Ref. | Frequency (GHz) | Max Conversion Efficiency (%) | Circuit Size (mm3) | Pin (dBm) | Max Gain (dBi) | Max Harvested DC Output Voltage (v) | Substrate | Distance (m) | Diode Type |
---|---|---|---|---|---|---|---|---|---|
[176] | 24 | 80 | 40 × 40 × 1.6 | 4.9 | 7.8 | 6.82 | FR-4 | 1.5 | Schottky CMOS |
[177] | 2.45 | 20 | 24.9 × 8.6 × 1.6 | −20 | 0.8 | 0.097 | FR-4 | 0.9 | HSMS-2852 Schottky |
[178] | 2.45 | - | 160 × 130 × 0.55 | –40 to 0 | 5 | [email protected] m; 1@2 m | Cordura fabric | 1.5 2 | HSMS-2862 Schottky |
[179] | 3.1–8 | 69 | 6.3 × 13 × 0.8 | −10 | 3.2 | - | FR-4 | 0.5 | SMS 7630 |
[180] | 1.975–4.744 | 88.58 | 40 × 45 × 1.6 | 0 | 4.3 | 10.703 | FR-4 | 2 | HSMS 270B Schottky |
[181] | 0.91–2.55 | 68 | 165 × 165 × 0.8 | −10 | 5 to 8.3 | 0.243 | FR-4 | - | HSMS-285C |
[182] | 1.7–3 | 60 | 178 × 148 × 0.813 | - | 9.902 | 3.7 | Roger RO4003C | 0.75 | SMS7630 |
[183] | 2.4 | 50 | 63.7 × 45.6 × 1.6 | −10 to 17 | 5.3 | 3 | FR-4 | 1–2.5 | HSMS 2850 and SMS7630 |
[184] | 2.1 and 3.3 | 76.3 | 31 × 18 × 1 | 4 to 16 | - | - | F4B | - | HSMS286 |
[185] | 2.4 | 69.3 | 4 × 11.7 × 1.6 | 5.2 | 5.9 | 3.5 | RO4003C | - | SMS7630 |
[186] | 2.45 | 19.5–44.6 | 150 × 80 × 4 | −9.48 | 8.53 | - | RO4003 | - | SMS7630 |
[187] | 2.45 and 3.6 | 59%@ 2.45; 41% @3.6 | 44 × 24.5 × 0.06 | 2 | [email protected]; [email protected] | - | Rogers R04003 | 0.65 | SMS-7630 |
[188] | 2.2 | 50 | 71 × 71 × 1.6 | 29 | 7.46 | 0.516 in parallel 1.087 in series | RT/duroid 5880 Rogers | 1 | SMS7621 |
[189] | 0.909 | 88 | 99.5 × 26 × 0.508 | −10 | 4.6 | 7 | Rogers 5880 | 1.2 | HSMS286C SMS7630 |
[190] | 20–26.5 | 70 | 32.6 × 16 × 4 | 27 | 8 | 6.5 | Textile | 0.12 | MA4E-1319 |
[191] | 0.915–2.4 | 80 | 115 × 15 × 1.4 | −7 | 2.3 | 1.8 | Textile | 4.2 | BAT15-04R |
[192] | 0.83 | 63 | - | −10 | 1.7 | 0.65 | Felt | 0.89 | SMS7630-079lf |
Diode Configuration | Nanoantenna | Operating Frequency (THz) | Maximum Responsivity (V−1) | Zero-Bias Responsivity (V−1) | Zero-Bias Resistance (Ω) |
---|---|---|---|---|---|
Exfoliated monolayer graphene-based arrowhead-shaped diode [234] | metal bowtie 15 nm Cr/40 nm Au | 28.3 | 0.2 for VDS = 1.5 V | 0.18 for VDS = 0 V | 13 K |
Exfoliated monolayer graphene-based arrowhead-shaped diode [235] | metal bowtie 15 nm Cr/40 nm Au | Up to 160 | 0.8 for VDS = 0.4 V | 0.3 for VDS = 0 V | 19 K |
Exfoliated monolayer graphene-based arrowhead-shaped diode [236] | metal bowtie 15 nm Cr/40 nm Au | 28.3 | 0.2 for VDS (V) = 1.4 V | 0.12 for VDS = 0 V | 3 K |
(CVD) monolayer graphene-based arrowhead-shaped diode [237] | metal bowtie Ti (10 nm)/Au (40 nm) | 28.3 | 0.3 for VDS (V) = 0.5 V | 0.1 for VDS (V) = 0 V | 5 K |
Z-shaped graphene geometric diodes [233] | - | 28.3 | 2.4 for V0 (V) = 0.5 V | - | - |
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Citroni, R.; Mangini, F.; Frezza, F. Efficient Integration of Ultra-low Power Techniques and Energy Harvesting in Self-Sufficient Devices: A Comprehensive Overview of Current Progress and Future Directions. Sensors 2024, 24, 4471. https://doi.org/10.3390/s24144471
Citroni R, Mangini F, Frezza F. Efficient Integration of Ultra-low Power Techniques and Energy Harvesting in Self-Sufficient Devices: A Comprehensive Overview of Current Progress and Future Directions. Sensors. 2024; 24(14):4471. https://doi.org/10.3390/s24144471
Chicago/Turabian StyleCitroni, Rocco, Fabio Mangini, and Fabrizio Frezza. 2024. "Efficient Integration of Ultra-low Power Techniques and Energy Harvesting in Self-Sufficient Devices: A Comprehensive Overview of Current Progress and Future Directions" Sensors 24, no. 14: 4471. https://doi.org/10.3390/s24144471
APA StyleCitroni, R., Mangini, F., & Frezza, F. (2024). Efficient Integration of Ultra-low Power Techniques and Energy Harvesting in Self-Sufficient Devices: A Comprehensive Overview of Current Progress and Future Directions. Sensors, 24(14), 4471. https://doi.org/10.3390/s24144471