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产品型号MUR4100ERLG的概述

芯片MUR4100ERLG的概述 MUR4100ERLG是一种高功率整流二极管，广泛应用于电源电路、电子设备及各种电力电子应用之中。该器件的设计旨在处理高电流和高反向电压，因此便于在需要高可靠性及长期稳定性的场合中使用。它的主要特点是快速恢复时间、低正向压降和高电流承载能力，适合在高频开关电源和其他需要高效整流的系统中使用。芯片MUR4100ERLG的详细参数 MUR4100ERLG的电气特性和参数如下： - 额定反向电压 (V_R): 400V - 额定正向电流 (I_F): 1A - 最大正向压降 (V_F): 0.85V @ I_F = 1A - 最大脉冲反向电流 (I_RM): 30mA - 恢复时间 (T_rr): 100ns - 工作温度范围: -55℃ 到 +150℃ - 封装类型: DO-214AA (SMB封装) - 散热双极性 (RθJA): 50°C/W 这些参...

产品型号MUR4100ERLG的Datasheet PDF文件预览

MUR480E, MUR4100E

SWITCHMODEt

Power Rectifiers

Ultrafast “E’’ Series with High Reverse

Energy Capability

http://onsemi.com

These state−of−the−art devices are designed for use in switching

power supplies, inverters and as free wheeling diodes.

ULTRAFAST RECTIFIER

4.0 AMPERES, 800−1000 VOLTS

Features

• 20 mJ Avalanche Energy Guaranteed

• Excellent Protection Against Voltage Transients in Switching

Inductive Load Circuits

• Ultrafast 75 Nanosecond Recovery Time

• 175°C Operating Junction Temperature

• Low Forward Voltage

• Low Leakage Current

• High Temperature Glass Passivated Junction

• Reverse Voltage to 1000 V

• These are Pb−Free Devices*

Mechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 1.1 Gram (Approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

AXIAL LEAD

CASE 267

STYLE 1

• Lead Temperature for Soldering Purposes:

MARKING DIAGRAM

260°C Max. for 10 Seconds

• Shipped in Plastic Bags, 5,000 per Bag

• Available Tape and Reel, 1,500 per Reel, by Adding a “RL’’ Suffix to

the Part Number

• Polarity: Cathode indicated by Polarity Band

MUR

4xxx

YYWWG

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RRM

RWM

MUR480E

MUR4100E

800

1000

= Assembly Location

MUR4xxx= Device Number (see page 2)

= Year

= Work Week

= Pb−Free Package

Average Rectified Forward Current

(Square Wave; Mounting Method #3 Per Note 2)

4.0 @

T = 35°C

F(AV)

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions

Halfwave, Single Phase, 60 Hz)

FSM

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Operating Junction and Storage Temperature

Range

T , T

−65 to

+175

°C

stg

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Publication Order Number:

February, 2007 − Rev. 7

MUR480E/D

MUR480E, MUR4100E

THERMAL CHARACTERISTICS

Rating

Symbol

Value

Unit

Maximum Thermal Resistance, Junction−to−Ambient

ELECTRICAL CHARACTERISTICS

Characteristic

See Note 2

°C/W

Symbol

Max

Unit

Maximum Instantaneous Forward Voltage (Note 1)

(i = 3.0 Amps, T = 150°C)

1.53

1.75

1.85

(i = 3.0 Amps, T = 25°C)

(i = 4.0 Amps, T = 25°C)

Maximum Instantaneous Reverse Current (Note 1)

(Rated dc Voltage, T = 150°C)

900

(Rated dc Voltage, T = 25°C)

Maximum Reverse Recovery Time

(I = 1.0 Amp, di/dt = 50 Amp/ms)

100

(I = 0.5 Amp, i = 1.0 Amp, I = 0.25 Amp)

REC

Maximum Forward Recovery Time

(I = 1.0 Amp, di/dt = 100 Amp/ms, Recovery to 1.0 V)

Controlled Avalanche Energy (See Test Circuit in Figure 6)

AVAL

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.

ORDERING INFORMATION

†

Device

Marking

Package

Axial Lead*

Shipping

MUR480E

500 Units / Bulk

1500 / Tape & Reel

500 Units / Bulk

1500 / Tape & Reel

MUR480EG

MUR480ERL

MUR480E

MUR480ERLG

MUR480ES

MUR4100E

MUR480ESG

MUR4100E

MUR4100EG

MUR4100ERL

MUR4100ERLG

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*This package is inherently Pb−Free.

http://onsemi.com

MUR480E, MUR4100E

1000

400

T = 175°C

200

100

25°C

T = 175°C

7.0

5.0

100°C

25°C

100°C

4.0

2.0

1.0

0.4

0.2

0.1

3.0

2.0

0.04

0.02

0.01

0.004

0.002

0.001

*The curves shown are typical for the highest voltage

device in the voltage grouping. Typical reverse current

for lower voltage selections can be estimated from these

same curves if V is sufficiently below rated V .

100 200 300 400 500 600 700 800 900 1000

1.0

V , REVERSE VOLTAGE (VOLTS)

Figure 2. Typical Reverse Current*

0.7

0.5

8.0

6.0

4.0

0.3

0.2

Rated V

= 28°C/W

0.1

0.07

0.05

SQUARE WAVE

2.0

0.03

0.02

100

150

200

250

0.2 0.4 0.6 0.8 1.0 1.2 1.4

1.6 1.8

T , AMBIENT TEMPERATURE (°C)

INSTANTANEOUS VOLTAGE (VOLTS)

Figure 3. Current Derating

Figure 1. Typical Forward Voltage

(Mounting Method #3 Per Note 2)

9.0

8.0

7.0

6.0

5.0

T = 175°C

5.0

T = 25°C

(Capacitive

Load)

=20

4.0

3.0

2.0

SQUAREWAVE

9.0

8.0

1.0

7.0

1.0

2.0

3.0

4.0

5.0

V , REVERSE VOLTAGE (VOLTS)

, AVERAGE FORWARD CURRENT (AMPS)

F(AV)

Figure 4. Power Dissipation

Figure 5. Typical Capacitance

http://onsemi.com

MUR480E, MUR4100E

40 mH COIL

DUT

MERCURY

SWITCH

DUT

Figure 6. Test Circuit

Figure 7. Current−Voltage Waveforms

The unclamped inductive switching circuit shown in

Figure 6 was used to demonstrate the controlled avalanche

capability of the new “E’’ series Ultrafast rectifiers. A

mercury switch was used instead of an electronic switch to

simulate a noisy environment when the switch was being

opened.

component resistances. Assuming the component resistive

elements are small Equation (1) approximates the total

energy transferred to the diode. It can be seen from this

equation that if the V

voltage is low compared to the

breakdown voltage of the device, the amount of energy

contributed by the supply during breakdown is small and the

total energy can be assumed to be nearly equal to the energy

When S is closed at t the current in the inductor I ramps

up linearly; and energy is stored in the coil. At t the switch

stored in the coil during the time when S was closed,

is opened and the voltage across the diode under test begins

to rise rapidly, due to di/dt effects, when this induced voltage

reaches the breakdown voltage of the diode, it is clamped at

Equation (2).

The oscilloscope picture in Figure 8, shows the

information obtained for the MUR8100E (similar die

construction as the MUR4100E Series) in this test circuit

conducting a peak current of one ampere at a breakdown

voltage of 1300 V, and using Equation (2) the energy

absorbed by the MUR8100E is approximately 20 mjoules.

Although it is not recommended to design for this

condition, the new “E’’ series provides added protection

against those unforeseen transient viruses that can produce

unexplained random failures in unfriendly environments.

and the diode begins to conduct the full load current

DUT

which now starts to decay linearly through the diode, and

goes to zero at t .

By solving the loop equation at the point in time when S

is opened; and calculating the energy that is transferred to

the diode it can be shown that the total energy transferred is

equal to the energy stored in the inductor plus a finite amount

of energy from the V power supply while the diode is in

breakdown (from t to t ) minus any losses due to finite

CHANNEL 2:

EQUATION (1):

CH1 500V

CH2 50mV

20ms

953 V VERT

0.5 AMPS/DIV.

DUT

[

LI_LPKǒ Ǔ

AVAL

–V

DUT DD

CHANNEL 1:

DUT

500 VOLTS/DIV.

EQUATION (2):

LPK

[

AVAL

TIME BASE:

20 ms/DIV.

ACQUISITIONS

SAVEREF SOURCE

217:33 HRS

STACK

CH1

CH2

REF

Figure 8. Current−Voltage Waveforms

http://onsemi.com

MUR480E, MUR4100E

NOTE 2 − AMBIENT MOUNTING DATA

Data shown for thermal resistance junction−to−ambient

(R ) for the mountings shown is to be used as typical

qJA

guideline values for preliminary engineering or in case the

tie point temperature cannot be measured.

TYPICAL VALUES FOR R

IN STILL AIR

Lead Length, L (IN)

Mounting

Method

1/8

1/4

1/2

3/4

Units

°C/W

MOUNTING METHOD 1

P.C. Board Where Available Copper

Surface area is small.

MOUNTING METHOD 2

Vector Push−In Terminals T−28

MOUNTING METHOD 3

P.C. Board with

″

1−1/2 x 1−1/2 Copper Surface

L = 1/2″

Board Ground Plane

http://onsemi.com

MUR480E, MUR4100E

PACKAGE DIMENSIONS

AXIAL LEAD

CASE 267−05

(DO−201AD)

ISSUE G

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

INCHES

DIM MIN MAX

MILLIMETERS

MIN

7.30

4.80

1.20

25.40

MAX

9.50

5.30

1.30

−−−

0.287

0.189

0.047

1.000

0.374

0.209

0.051

−−−

STYLE 1:

PIN 1. CATHODE (POLARITY BAND)

2. ANODE

SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5773−3850

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

MUR480E/D

http://onsemi.com

MUR4100ERLG相关文章

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MUR4100GP-TP产品参数

型号:	MUR4100GP-TP
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	MICRO COMMERCIAL COMPONENTS CORP
零件包装代码：	DO-201AD
包装说明：	ROHS COMPLIANT, PLASTIC PACKAGE-2
针数：	2
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
HTS代码：	8541.10.00.80
风险等级：	5.37
应用：	EFFICIENCY
外壳连接：	ISOLATED
配置：	SINGLE
二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	1.85 V
JEDEC-95代码：	DO-201AD
JESD-30 代码：	O-PALF-W2
JESD-609代码：	e3
最大非重复峰值正向电流：	150 A
元件数量：	1
相数：	1
端子数量：	2
最高工作温度：	150 °C
最低工作温度：	-55 °C
最大输出电流：	4 A
封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND
封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED
最大重复峰值反向电压：	1000 V
最大反向电流：	10 µA
最大反向恢复时间：	0.075 µs
表面贴装：	NO
端子面层：	Matte Tin (Sn)
端子形式：	WIRE
端子位置：	AXIAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED

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产品型号MUR4100ERLG的概述

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