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产品型号MMSZ10ET1G的Datasheet PDF文件预览

MMSZ2V4ET1 Series  
Zener Voltage Regulators  
500 mW SOD−123 Surface Mount  
Three complete series of Zener diodes are offered in the convenient,  
surface mount plastic SOD−123 package. These devices provide a  
convenient alternative to the leadless 34−package style.  
http://onsemi.com  
Specification Features  
500 mW Rating on FR−4 or FR−5 Board  
1
2
Wide Zener Reverse Voltage Range − 2.4 V to 56 V  
Package Designed for Optimal Automated Board Assembly  
Small Package Size for High Density Applications  
ESD Rating of Class 3 (>16 kV) per Human Body Model  
Peak Power − 225 W (8 X 20 ms)  
Cathode  
Anode  
2
Pb−Free Packages are Available  
1
Mechanical Characteristics  
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
SOD−123  
CASE 425  
STYLE 1  
POLARITY: Cathode indicated by polarity band  
FLAMMABILITY RATING: UL 94 V−0  
MARKING DIAGRAM  
MAXIMUM RATINGS  
Rating  
Symbol  
Max  
Unit  
xxx M G  
G
Peak Power Dissipation @ 20 ms (Note 1)  
P
225  
W
pk  
@ T 25°C  
L
Total Power Dissipation on FR−5 Board,  
P
D
(Note 2) @ T = 75°C  
500  
6.7  
mW  
mW/°C  
L
xxx = Device Code  
Derated above 75°C  
M
= Date Code  
G
= Pb−Free Package  
Thermal Resistance, Junction−to−Ambient  
(Note 3)  
R
340  
°C/W  
°C/W  
°C  
q
JA  
(Note: Microdot may be in either location)  
Thermal Resistance, Junction−to−Lead  
(Note 3)  
R
q
JL  
150  
ORDERING INFORMATION  
Junction and Storage Temperature Range T , T  
−55 to +150  
J
stg  
Device  
Package  
Shipping  
3000/Tape & Reel  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. Nonrepetitive current pulse per Figure 11  
2. FR−5 = 3.5 X 1.5 inches, using the ON minimum recommended footprint  
3. Thermal Resistance measurement obtained via infrared Scan Method  
MMSZxxxET1  
SOD−123  
(Pb−Free)  
MMSZxxxET3  
SOD−123 10,000/Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking  
column of the Electrical Characteristics table on page 3 of  
this data sheet.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 5  
MMSZ2V4ET1/D  
 
MMSZ2V4ET1 Series  
ELECTRICAL CHARACTERISTICS (T = 25°C unless  
A
I
otherwise noted, V = 0.95 V Max. @ I = 10 mA)  
F
F
I
F
Symbol  
Parameter  
V
Reverse Zener Voltage @ I  
Reverse Current  
Z
ZT  
I
ZT  
V
V
R
Z
I
Maximum Zener Impedance @ I  
Z
ZT  
ZT  
V
I
V
R
ZT  
F
Reverse Leakage Current @ V  
I
R
R
V
Reverse Voltage  
Forward Current  
R
I
F
V
Forward Voltage @ I  
F
F
Zener Voltage Regulator  
http://onsemi.com  
2
MMSZ2V4ET1 Series  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 0.9 V Max. @ I = 10 mA)  
A
F
F
V
(V)  
Z
V
(V)  
Z
ZT2  
Max Reverse  
Z1  
ZT1  
Z2  
(Notes 4 and 5)  
(Note 6)  
(Notes 4 and 5)  
(Note 6)  
Leakage Current  
@ I  
Nom  
2.4  
2.7  
3.0  
3.3  
3.6  
3.9  
4.3  
4.7  
5.1  
5.6  
6.2  
6.8  
7.5  
8.2  
9.1  
10  
= 5 mA  
Max  
@ I = 1 mA  
I @ V  
R R  
ZT1  
ZT2  
Device  
Marking  
Min  
2.28  
W
100  
100  
95  
95  
90  
90  
90  
80  
60  
40  
10  
15  
15  
15  
15  
20  
20  
25  
30  
30  
40  
45  
55  
55  
70  
Min  
1.7  
Max  
W
mA  
V
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
Device  
MMSZ2V4ET1, G  
MMSZ2V7ET1, G  
MMSZ3V0ET1  
MMSZ3V3ET1, G  
MMSZ3V6ET1, G  
MMSZ3V9ET1, G  
MMSZ4V3ET1  
MMSZ4V7ET1  
MMSZ5V1ET1, G  
MMSZ5V6ET1  
MMSZ6V2ET1  
MMSZ6V8ET1  
MMSZ7V5ET1  
MMSZ8V2ET1  
MMSZ9V1ET1  
MMSZ10ET1, G  
MMSZ11ET1  
CL1  
CL2  
CL3  
CL4  
CL5  
CL6  
CL7  
CL8  
CL9  
CM1  
CM2  
CM3  
CM4  
CM5  
CM6  
CM7  
CM8  
CM9  
CN1  
CN2  
CN3  
CN4  
CN5  
CN6  
CN7  
2.52  
2.1  
2.4  
600  
600  
600  
600  
600  
600  
600  
500  
480  
400  
150  
80  
50  
20  
10  
5
2.57  
2.84  
1.9  
2.85  
3.15  
2.1  
2.7  
3.14  
3.47  
2.3  
2.9  
3.42  
3.78  
2.7  
3.3  
5
3.71  
4.10  
2.9  
3.5  
3
4.09  
4.52  
3.3  
4.0  
3
4.47  
4.94  
3.7  
4.7  
3
4.85  
5.36  
4.2  
5.3  
2
5.32  
5.88  
4.8  
6.0  
1
5.89  
6.51  
5.6  
6.6  
3
6.46  
7.14  
6.3  
7.2  
2
7.13  
7.88  
6.9  
7.9  
80  
1
7.79  
8.61  
7.6  
8.7  
80  
0.7  
0.5  
0.2  
0.1  
0.1  
0.1  
8.65  
9.56  
8.4  
9.6  
100  
150  
150  
150  
170  
200  
200  
225  
225  
250  
250  
9.50  
10.50  
11.55  
12.60  
13.65  
15.75  
16.80  
18.90  
21.00  
23.10  
25.20  
9.3  
10.6  
11.6  
12.7  
14.0  
15.5  
17.0  
19.0  
21.1  
23.2  
25.5  
10.45  
11.40  
12.35  
14.25  
15.20  
17.10  
19.00  
20.90  
22.80  
11  
10.2  
11.2  
12.3  
13.7  
15.2  
16.7  
18.7  
20.7  
22.7  
MMSZ12ET1, G  
MMSZ13ET1  
12  
13  
MMSZ15ET1, G  
MMSZ16ET1, G  
MMSZ18ET1, G  
MMSZ20ET1, G  
MMSZ22ET1, G  
MMSZ24ET1  
15  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
10.5  
11.2  
12.6  
14  
16  
18  
20  
22  
15.4  
16.8  
24  
4. The type numbers shown have a standard tolerance of 5% on the nominal Zener Voltage.  
5. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms.  
6. Z and Z are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for  
ZT  
ZK  
I
= 0.1 I  
with the AC frequency = 1 kHz.  
Z(AC)  
Z(DC),  
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and  
best overall value.  
* The “G” suffix indicates Pb−Free package available.  
http://onsemi.com  
3
 
MMSZ2V4ET1 Series  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 0.9 V Max. @ I = 10 mA)  
A
F
F
V
(V)  
Z
V
(V)  
Z
ZT2  
Max Reverse  
Z1  
ZT1  
Z2  
(Notes 7 and 8)  
(Note 9)  
(Notes 7 and 8)  
(Note 9)  
Leakage Current  
@ I  
=
ZT2  
0.5 mA  
@ I  
Nom  
27  
= 2 mA  
Max  
@ I  
= 0.1 mA  
Max  
28.9  
32  
I @ V  
R R  
ZT1  
ZT2  
Device  
Marking  
Min  
W
Min  
W
mA  
V
Device  
MMSZ27ET1, G  
MMSZ30ET1  
MMSZ33ET1  
MMSZ36ET1  
MMSZ39ET1  
MMSZ43ET1, G  
MMSZ47ET1  
MMSZ51ET1  
MMSZ56ET1  
CN8  
CN9  
CP1  
CP2  
CP3  
CP4  
CP5  
CP6  
CP7  
25.65  
28.50  
31.35  
34.20  
37.05  
40.85  
44.65  
48.45  
53.20  
28.35  
31.50  
34.65  
37.80  
40.95  
45.15  
49.35  
53.55  
58.80  
80  
25  
300  
300  
325  
350  
350  
375  
375  
400  
425  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
18.9  
21  
30  
80  
27.8  
30.8  
33.8  
36.7  
39.7  
43.7  
47.6  
51.5  
33  
80  
35  
23.1  
25.2  
27.3  
30.1  
32.9  
35.7  
39.2  
36  
90  
38  
39  
130  
150  
170  
180  
200  
41  
43  
46  
47  
50  
51  
54  
56  
60  
7. The type numbers shown have a standard tolerance of 5% on the nominal Zener Voltage.  
8. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms.  
9. Z and Z are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for  
ZT  
ZK  
I
= 0.1 I  
with the AC frequency = 1 kHz.  
Z(AC)  
Z(DC),  
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and  
best overall value.  
* The “G” suffix indicates Pb−Free package available.  
http://onsemi.com  
4
 
MMSZ2V4ET1 Series  
TYPICAL CHARACTERISTICS  
8
7
6
5
4
3
100  
TYPICAL T VALUES  
FOR MMSZ2V4T1 SERIES  
C
TYPICAL T VALUES  
FOR MMSZ2V4T1 SERIES  
C
V
@ I  
ZT  
Z
V @ I  
Z
ZT  
10  
2
1
0
−1  
−2  
1
−3  
2
3
4
5
6
7
8
9
10 11  
12  
10  
100  
V , NOMINAL ZENER VOLTAGE (V)  
Z
V , NOMINAL ZENER VOLTAGE (V)  
Z
Figure 1. Temperature Coefficients  
Figure 2. Temperature Coefficients  
(Temperature Range 55°C to +150°C)  
(Temperature Range 55°C to +150°C)  
1.2  
1.0  
0.8  
0.6  
1000  
100  
10  
RECTANGULAR  
WAVEFORM, T = 25°C  
A
P
versus T  
L
D
P
versus T  
A
D
0.4  
0.2  
0
1
0
25  
50  
75  
100  
125  
150  
0.1  
1
10  
100  
1000  
T, TEMPERATURE (°C)  
PW, PULSE WIDTH (ms)  
Figure 3. Steady State Power Derating  
Figure 4. Maximum Nonrepetitive Surge Power  
1000  
100  
10  
1000  
100  
10  
T = 25°C  
Z(AC)  
f = 1 kHz  
75 V (MMSZ5267BT1)  
91 V (MMSZ5270BT1)  
J
I
= 0.1 I  
Z(DC)  
I
= 1 mA  
Z
5 mA  
20 mA  
150°C  
25°C  
0°C  
75°C  
1
1
1
10  
V , NOMINAL ZENER VOLTAGE  
100  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
V , FORWARD VOLTAGE (V)  
Z
F
Figure 5. Effect of Zener Voltage on  
Zener Impedance  
Figure 6. Typical Forward Voltage  
http://onsemi.com  
5
MMSZ2V4ET1 Series  
TYPICAL CHARACTERISTICS  
1000  
100  
1000  
T = 25°C  
A
0 V BIAS  
1 V BIAS  
100  
10  
1
+150°C  
BIAS AT  
50% OF V NOM  
0.1  
0.01  
Z
10  
1
+25°C  
55°C  
0.001  
0.0001  
0.00001  
1
10  
100  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
V , NOMINAL ZENER VOLTAGE (V)  
Z
V , NOMINAL ZENER VOLTAGE (V)  
Z
Figure 7. Typical Capacitance  
Figure 8. Typical Leakage Current  
100  
10  
100  
10  
T = 25°C  
A
T = 25°C  
A
1
1
0.1  
0.01  
0.1  
0.01  
10  
30  
50  
70  
90  
0
2
4
6
8
10  
12  
V , ZENER VOLTAGE (V)  
Z
V , ZENER VOLTAGE (V)  
Z
Figure 10. Zener Voltage versus Zener Current  
(12 V to 91 V)  
Figure 9. Zener Voltage versus Zener Current  
(VZ Up to 12 V)  
100  
PEAK VALUE I  
@ 8 ms  
RSM  
t
r
90  
80  
70  
60  
50  
40  
30  
20  
PULSE WIDTH (t ) IS DEFINED  
AS THAT POINT WHERE THE  
PEAK CURRENT DECAY = 8 ms  
P
HALF VALUE I  
/2 @ 20 ms  
RSM  
t
P
10  
0
0
20  
40  
60  
80  
t, TIME (ms)  
Figure 11. 8 × 20 ms Pulse Waveform  
http://onsemi.com  
6
MMSZ2V4ET1 Series  
PACKAGE DIMENSIONS  
SOD−123  
CASE 425−04  
ISSUE E  
D
A
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
A1  
1
MILLIMETERS  
INCHES  
DIM MIN  
NOM  
1.17  
0.05  
0.61  
−−−  
MAX  
MIN  
0.037  
0.000  
0.020  
−−−  
NOM  
0.046  
0.002  
0.024  
−−−  
MAX  
0.053  
0.004  
0.028  
0.006  
0.071  
0.112  
0.152  
−−−  
A
A1  
b
0.94  
0.00  
0.51  
−−−  
1.35  
0.10  
0.71  
0.15  
1.80  
2.84  
3.86  
−−−  
H
E
E
c
D
1.40  
2.54  
3.56  
1.60  
2.69  
3.68  
−−−  
0.055  
0.100  
0.140  
0.010  
0.063  
0.106  
0.145  
−−−  
E
H
E
L
0.25  
L
STYLE 1:  
PIN 1. CATHODE  
2. ANODE  
2
C
b
SOLDERING FOOTPRINT*  
0.91  
0.036  
1.22  
0.048  
2.36  
0.093  
4.19  
0.165  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
ON Semiconductor Website: http://onsemi.com  
Order Literature: http://www.onsemi.com/litorder  
Literature Distribution Center for ON Semiconductor  
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA  
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada  
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
Japan: ON Semiconductor, Japan Customer Focus Center  
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051  
Phone: 81−3−5773−3850  
For additional information, please contact your  
local Sales Representative.  
MMSZ2V4ET1/D  
配单直通车
MMSZ10ET1G产品参数
型号:MMSZ10ET1G
是否Rohs认证:符合
生命周期:Obsolete
IHS 制造商:ON SEMICONDUCTOR
包装说明:R-PDSO-G2
针数:2
制造商包装代码:CASE 425-04
Reach Compliance Code:compliant
ECCN代码:EAR99
HTS代码:8541.10.00.50
风险等级:5.7
Is Samacsys:N
配置:SINGLE
二极管元件材料:SILICON
二极管类型:ZENER DIODE
最大动态阻抗:20 Ω
JESD-30 代码:R-PDSO-G2
JESD-609代码:e3
湿度敏感等级:1
元件数量:1
端子数量:2
最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL
最大功率耗散:0.5 W
认证状态:Not Qualified
标称参考电压:10 V
子类别:Voltage Reference Diodes
表面贴装:YES
技术:ZENER
端子面层:Tin (Sn)
端子形式:GULL WING
端子位置:DUAL
处于峰值回流温度下的最长时间:40
最大电压容差:5%
工作测试电流:5 mA
Base Number Matches:1
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