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Dynamically replicated memory: building reliable systems from nanoscale resistive memories

Published: 13 March 2010 Publication History

Abstract

DRAM is facing severe scalability challenges in sub-45nm tech- nology nodes due to precise charge placement and sensing hur- dles in deep-submicron geometries. Resistive memories, such as phase-change memory (PCM), already scale well beyond DRAM and are a promising DRAM replacement. Unfortunately, PCM is write-limited, and current approaches to managing writes must de- commission pages of PCM when the first bit fails.
This paper presents dynamically replicated memory (DRM), the first hardware and operating system interface designed for PCM that allows continued operation through graceful degradation when hard faults occur. DRM reuses memory pages that con- tain hard faults by dynamically forming pairs of complementary pages that act as a single page of storage. No changes are required to the processor cores, the cache hierarchy, or the operating sys- tem's page tables. By changing the memory controller, the TLBs, and the operating system to be DRM-aware, we can improve the lifetime of PCM by up to 40x over conventional error-detection techniques.

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Cited By

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  • (2024)Hercules: Enabling Atomic Durability for Persistent Memory with Transient Persistence DomainACM Transactions on Embedded Computing Systems10.1145/360747323:6(1-34)Online publication date: 11-Sep-2024
  • (2024)A Review: Complete Analysis of the Cache Architecture for Better Performance2024 Second International Conference on Inventive Computing and Informatics (ICICI)10.1109/ICICI62254.2024.00129(768-771)Online publication date: 11-Jun-2024
  • (2023)SW-PCM: Graceful Degradation Support in PCM Main Memories by Using Swaption MechanismProceedings of the Future Technologies Conference (FTC) 2023, Volume 310.1007/978-3-031-47457-6_34(514-531)Online publication date: 9-Nov-2023
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    cover image ACM Conferences
    ASPLOS XV: Proceedings of the fifteenth International Conference on Architectural support for programming languages and operating systems
    March 2010
    422 pages
    ISBN:9781605588391
    DOI:10.1145/1736020
    • General Chair:
    • James C. Hoe,
    • Program Chair:
    • Vikram S. Adve
    • cover image ACM SIGARCH Computer Architecture News
      ACM SIGARCH Computer Architecture News  Volume 38, Issue 1
      ASPLOS '10
      March 2010
      399 pages
      ISSN:0163-5964
      DOI:10.1145/1735970
      Issue’s Table of Contents
    • cover image ACM SIGPLAN Notices
      ACM SIGPLAN Notices  Volume 45, Issue 3
      ASPLOS '10
      March 2010
      399 pages
      ISSN:0362-1340
      EISSN:1558-1160
      DOI:10.1145/1735971
      Issue’s Table of Contents
    Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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    Publication History

    Published: 13 March 2010

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    Author Tags

    1. phase-change memory
    2. write endurance

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    ASPLOS XV Paper Acceptance Rate 32 of 181 submissions, 18%;
    Overall Acceptance Rate 535 of 2,713 submissions, 20%

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    Cited By

    View all
    • (2024)Hercules: Enabling Atomic Durability for Persistent Memory with Transient Persistence DomainACM Transactions on Embedded Computing Systems10.1145/360747323:6(1-34)Online publication date: 11-Sep-2024
    • (2024)A Review: Complete Analysis of the Cache Architecture for Better Performance2024 Second International Conference on Inventive Computing and Informatics (ICICI)10.1109/ICICI62254.2024.00129(768-771)Online publication date: 11-Jun-2024
    • (2023)SW-PCM: Graceful Degradation Support in PCM Main Memories by Using Swaption MechanismProceedings of the Future Technologies Conference (FTC) 2023, Volume 310.1007/978-3-031-47457-6_34(514-531)Online publication date: 9-Nov-2023
    • (2021)HARP: Practically and Effectively Identifying Uncorrectable Errors in Memory Chips That Use On-Die Error-Correcting CodesMICRO-54: 54th Annual IEEE/ACM International Symposium on Microarchitecture10.1145/3466752.3480061(623-640)Online publication date: 18-Oct-2021
    • (2021)DvéProceedings of the 48th Annual International Symposium on Computer Architecture10.1109/ISCA52012.2021.00048(526-539)Online publication date: 14-Jun-2021
    • (2020)A Partial Page Cache Strategy for NVRAM-Based Storage DevicesIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems10.1109/TCAD.2018.288704539:2(373-386)Online publication date: Feb-2020
    • (2020)WoLFRaM: Enhancing Wear-Leveling and Fault Tolerance in Resistive Memories using Programmable Address Decoders2020 IEEE 38th International Conference on Computer Design (ICCD)10.1109/ICCD50377.2020.00044(187-196)Online publication date: Oct-2020
    • (2019)Software wear management for persistent memoriesProceedings of the 17th USENIX Conference on File and Storage Technologies10.5555/3323298.3323303(45-63)Online publication date: 25-Feb-2019
    • (2019)A Survey on PCM Lifetime Enhancement SchemesACM Computing Surveys10.1145/333225752:4(1-38)Online publication date: 30-Aug-2019
    • (2019)An Efficient Spare-Line Replacement Scheme to Enhance NVM SecurityProceedings of the 56th Annual Design Automation Conference 201910.1145/3316781.3317767(1-6)Online publication date: 2-Jun-2019
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