Highly manufacturable Self-Aigned Direct Backside Contact (SA-DBC) and Backside Gate Contact (BGC) for 3-dimensional Stacked FET at 48nm gate pitch | IEEE Conference Publication | IEEE Xplore
Address
:
[go:
up one dir
,
main page
]
Include Form
Remove Scripts
Accept Cookies
Show Images
Show Referer
Rotate13
Base64
Strip Meta
Strip Title
Session Cookies
More Web Proxy on the site http://driver.im/