Towards scalable cryogenic quantum dot biasing using memristor-based DC sources
Abstract
Cryogenic memristor-based DC sources offer a promising avenue for in situ biasing of quantum dot arrays. In this study, we present experimental results and discuss the scaling potential for such DC sources. We first demonstrate the operation of a commercial discrete operational amplifier down to Image 1 which is used on the DC source prototype. Then, the tunability of the memristor-based DC source is validated by performing several Image 2-DC sweeps with a resolution of Image 3 at room temperature and at Image 1. Additionally, the DC source prototype exhibits a limited output drift of Image 4 at Image 1. This showcases the potential of memristor-based DC sources for quantum dot biasing. Limitations in power consumption and voltage resolution using discrete components highlight the need for a fully integrated and scalable complementary metal–oxide–semiconductor-based (CMOS-based) approach. To address this, we propose to monolithically co-integrate emerging non-volatile memories (eNVMs) and Image 5 CMOS circuitry. Simulations reveal a reduction in power consumption, down to Image 6 per DC source and in footprint. This allows for the integration of up to one million eNVM-based DC sources at the Image 7 stage of a dilution fridge, paving the way for near term large-scale quantum computing applications.
- Publication:
-
Cryogenics
- Pub Date:
- September 2024
- DOI:
- arXiv:
- arXiv:2404.10694
- Bibcode:
- 2024Cryo..14203910M
- Keywords:
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- Memristors;
- Cryogenic electronics;
- Quantum dots (QDs);
- Computer Science - Emerging Technologies;
- Physics - Applied Physics