IEICE Trans - Silicon Controlled Rectifier Based Partially Depleted SOI ESD Protection Device for High Voltage Application

V_h) and high triggering voltage (V_t1). In this paper, the body-tie side triggering diode inserting silicon controlled rectifier (BSTDISCR) is proposed and verified in 180 nm PD-SOI technology. Compared to the other devices in the same process and other related works, the BSTDISCR presents as a robust and latchup-immune PD-SOI ESD protection device, with appropriate V_t1 of 6.3 V, high V_h of 4.2 V, high normalized second breakdown current (I_t2), which indicates the ESD protection robustness, of 13.3 mA/µm, low normalized parasitic capacitance of 0.74 fF/µm." />

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Silicon Controlled Rectifier Based Partially Depleted SOI ESD Protection Device for High Voltage Application

Yibo JIANG
Hui BI
Hui LI
Zhihao XU
Cheng SHI

Publication
IEICE TRANSACTIONS on Electronics Vol.E103-C No.4 pp.191-193
Publication Date: 2020/04/01
Publicized: 2019/10/09
Online ISSN: 1745-1353
DOI: 10.1587/transele.2018ECS6024
Type of Manuscript: BRIEF PAPER
Category: Semiconductor Materials and Devices
Keyword:
electrostatic discharge (ESD), silicon on insulator (SOI), high voltage protection, body-tie side triggering diode inserting silicon controlled rectifier (BSTDISCR),

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Summary:
In partially depleted SOI (PD-SOI) technology, the SCR-based protection device is desired due to its relatively high robustness, but be restricted to use because of its inherent low holding voltage (V_h) and high triggering voltage (V_t1). In this paper, the body-tie side triggering diode inserting silicon controlled rectifier (BSTDISCR) is proposed and verified in 180 nm PD-SOI technology. Compared to the other devices in the same process and other related works, the BSTDISCR presents as a robust and latchup-immune PD-SOI ESD protection device, with appropriate V_t1 of 6.3 V, high V_h of 4.2 V, high normalized second breakdown current (I_t2), which indicates the ESD protection robustness, of 13.3 mA/µm, low normalized parasitic capacitance of 0.74 fF/µm.