MOTT SiGe SIMMWICs

KM Strohm, JF Luy, T Hackbarth… - 1998 IEEE MTT-S …, 1998 - ieeexplore.ieee.org
Mixer diodes in SIMMWIC (silicon millimeter wave integrated circuit) technology with barrier
height reducing n/sup +/ cap layers and SiGe top layers are investigated. The standard Mott …
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[BOOK][B] Applications of silicon-germanium heterostructure devices

CK Maiti, GA Armstrong - 2001 - taylorfrancis.com
The first book to deal with the design and optimization of transistors made from strained layers,
Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics…
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DBAG/TEMIC Ge

B Sb, ND NA, A St - Strained Silicon Heterostructures: Materials …, 2001 - books.google.com
Figure 5.3. Comparison of SiGe-HBT doping profiles of MBE (Daimler-Benz AG) and UHVCVD
(IBM) grown samples. Schematic profile exhibiting doping setback layers on the collector …
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